Assemblies of field transistors N-channel + N-channel

81 of over 5000
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Maximum drain-source voltage Usi, V
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Maximum drain-source current at 25 C Isi max..A
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Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)
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Maximum power dissipation Psi max..W
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Slope of characteristic, S
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BF998E6327HTSA1, 2N Channel Transistor, RF Radio Circuits [SOT-143]
780 pcs.
Brand: Infineon
Structure: 2N channels
Maximum drain-source voltage Usi, V: 12
Maximum drain-source current at 25 C Isi max..A: 0.03
Housing: SOT-143
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780 pcs.
267 ֏
94 ֏
×
from 50 pcs. — 79 ֏
FDS9926A, Transistor, PowerTrench, 2N-channel 20V 6.5A [SO-8]
362 pcs.
Brand: ON Semiconductor
Structure: 2N channels
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 6.5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.03 Ohm / 6.5A, 4.5V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 11
Housing: SOIC-8
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362 pcs.
540 ֏
274 ֏
×
from 25 pcs. — 233 ֏
IRF7103TRPBF, Transistor 2N-MOSFET 50V 3A [SOIC-8]
4112 pcs.
Brand: Infineon
Structure: 2N channels
Maximum drain-source voltage Usi, V: 50
Maximum drain-source current at 25 C Isi max..A: 3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.13 Ohm / 3A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 3.8
Housing: SOIC-8
quick view
4112 pcs.
150 ֏ ×
from 50 pcs. — 128 ֏
IRF7380TRPBF, Transistor, HEXFET, 2N-channel, 80V, 3.6A [SOIC-8]
697 pcs.
Brand: Infineon
Structure: 2N channels
Maximum drain-source voltage Usi, V: 80
Maximum drain-source current at 25 C Isi max..A: 3.6
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.073 ohm/2.2A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 4.3
Housing: SOIC-8
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697 pcs.
910 ֏
407 ֏
×
from 25 pcs. — 344 ֏
AO4826, Transistor 2N-MOSFET 60V 6.3A 4W [SOP-8]
6 days, 912 pcs.
Brand: UMW
Structure: 2N channels
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 7
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 20 mOhm/4.5A, 10V
Maximum power dissipation Psi max..W: 4
Slope of characteristic, S: 15
Housing: SOIC-8
quick view
6 days,
912 pcs.
96 ֏ ×
from 50 pcs. — 87 ֏
AO4828, Transistor 2N-MOSFET 60V 6.5A 2.1W [SOP-8]
6 days, 1409 pcs.
Brand: UMW
Structure: 2N channels
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 6.5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 30 mOhm/6A, 10V
Maximum power dissipation Psi max..W: 2.1
Slope of characteristic, S: 20
Housing: SOIC-8
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6 days,
1409 pcs.
101 ֏ ×
from 100 pcs. — 92 ֏
AO4832, N-MOSFET Transistor 30V 10A 2W [SOP-8]
6 days, 1865 pcs.
Brand: UMW
Structure: 2N channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 10
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 10.8 mOhm/10A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 43
Housing: SOIC-8
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6 days,
1865 pcs.
72 ֏ ×
from 50 pcs. — 65 ֏
AO4840, Transistor 2N-MOSFET 60V 7A 4W [SOP-8]
6 days, 1761 pcs.
Brand: UMW
Structure: 2N channels
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 7
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 19 mOhm/4.5A, 10V
Maximum power dissipation Psi max..W: 4
Slope of characteristic, S: 15
Housing: SOIC-8
quick view
6 days,
1761 pcs.
129 ֏ ×
from 100 pcs. — 117 ֏
AO4884, Transistor 2N-MOSFET 40V 10A 2W [SOP-8.]
6 days, 10918 pcs.
Brand: UMW
Structure: 2N channels
Maximum drain-source voltage Usi, V: 40
Maximum drain-source current at 25 C Isi max..A: 10
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 11 mOhm/10A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 50
Housing: SOIC-8
quick view
6 days,
10918 pcs.
90 ֏ ×
from 50 pcs. — 81 ֏
AO6800, Transistor 2N-MOSFET 30V 3.5A 1.14W [SOT23-6]
6 days, 2010 pcs.
Brand: UMW
Structure: 2N channels
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 3.5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 30 mOhm/3.4A, 10V
Maximum power dissipation Psi max..W: 1.14
Slope of characteristic, S: 10
Housing: SOT-23-6
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6 days,
2010 pcs.
35 ֏ ×
from 50 pcs. — 30 ֏
AO6802, Transistor 2N-MOSFET 30V 3.5A 1.15W [SOT-23-6]
6 days, 2133 pcs.
Brand: UMW
Structure: 2N channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 3.5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 40 mOhm/3.5A, 10V
Maximum power dissipation Psi max..W: 1.15
Slope of characteristic, S: 12
Housing: SOT-23-6
quick view
6 days,
2133 pcs.
76 ֏ ×
from 100 pcs. — 68 ֏
BSS138PS, Transistor 2N-MOSFET 60V 0.3A 0.35W [SOT-23-6.]
6 days, 2754 pcs.
Brand: UMW
Structure: 2N channels
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 2 ohms/0.3A, 10V
Maximum power dissipation Psi max..W: 0.35
Slope of characteristic, S: 0.1
Housing: SOT-23-6
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6 days,
2754 pcs.
16 ֏ ×
from 100 pcs. — 15 ֏
CEM9926A, Transistor 2N-MOSFET 20V 6A [SOP-8]
6 days, 2391 pcs.
Brand: UMW
Structure: 2N channels
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 7
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 22 mOhm/7A, 4.5V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 22
Housing: SOIC-8
quick view
6 days,
2391 pcs.
66 ֏ ×
from 100 pcs. — 58 ֏
IRF7103TR, 2N-MOSFET Transistor 50V 3A 2W [SOP-8.]
6 days, 2413 pcs.
Brand: UMW
Structure: 2N channels
Maximum drain-source voltage Usi, V: 50
Maximum drain-source current at 25 C Isi max..A: 3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.03Ohms/3A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 3.8
Housing: SOIC-8
quick view
6 days,
2413 pcs.
97 ֏ ×
from 50 pcs. — 91 ֏
IRF7301TR, Transistor 2N-MOSFET 20V 5.2A 2W [SOP-8.]
6 days, 6445 pcs.
Brand: UMW
Structure: 2N channels
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 5.2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 40 mOhm/2.6A, 4.5V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 8.3
Housing: SOIC-8
quick view
6 days,
6445 pcs.
106 ֏ ×
from 50 pcs. — 96 ֏
IRF7303TR, Transistor 2N-MOSFET 30V 4.9A 2W [SOP-8]
6 days, 3151 pcs.
Brand: UMW
Structure: 2N channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 5.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 50 mOhm/2.4A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 5.2
Housing: SOIC-8
quick view
6 days,
3151 pcs.
106 ֏ ×
from 50 pcs. — 96 ֏
IRF7311TR, 2N-MOSFET Transistor 30V 9A 1.6W [SOP-8.]
6 days, 2962 pcs.
Brand: UMW
Structure: 2N channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 9
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.013ohms/15A, 10V
Maximum power dissipation Psi max..W: 1.6
Slope of characteristic, S: 32
Housing: SOIC-8
quick view
6 days,
2962 pcs.
76 ֏ ×
from 100 pcs. — 71 ֏
IRF7313TR, Transistor 2N-MOSFET 30V 6.5A 2W [SOP-8]
6 days, 4749 pcs.
Brand: UMW
Structure: 2N channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 6.5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 29 mOhm/5.8A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 14
Housing: SOIC-8
quick view
6 days,
4749 pcs.
114 ֏ ×
from 50 pcs. — 104 ֏
IRF7341TR, Transistor 2N-MOSFET 55V 4.7A 2W [SOP-8]
6 days, 2580 pcs.
Brand: UMW
Structure: 2N channels
Maximum drain-source voltage Usi, V: 55
Maximum drain-source current at 25 C Isi max..A: 4.7
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 30 mOhm/4.7A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 7.9
Housing: SOIC-8
quick view
6 days,
2580 pcs.
106 ֏ ×
from 50 pcs. — 96 ֏
IRF7351TR, Transistor 2N-MOSFET 60V 8A 2W [SOP-8.]
6 days, 1062 pcs.
Brand: UMW
Structure: 2N channels
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 8
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 23 mOhm/8A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 18
Housing: SOIC-8
quick view
6 days,
1062 pcs.
194 ֏ ×
from 50 pcs. — 175 ֏
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