Field effect transistors Infineon Technologies

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Maximum drain-source voltage Usi, V
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Maximum drain-source current at 25 C Isi max..A
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Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)
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Maximum power dissipation Psi max..W
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Slope of characteristic, S
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IRF1404PBF, Transistor, N-channel 40V 162A [TO-220AB]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 40
Maximum drain-source current at 25 C Isi max..A: 202
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.004 Ohm / 121A, 10V
Maximum power dissipation Psi max..W: 200
Slope of characteristic, S: 76
Housing: TO-220AB
quick view
1 940 ֏
1 140 ֏
×
from 15 pcs. — 1 110 ֏
IRF1405PBF, Transistor, N-channel 55V 133A auto [TO-220AB]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 55
Maximum drain-source current at 25 C Isi max..A: 169
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0053 Ohm / 101A, 10V
Maximum power dissipation Psi max..W: 330
Slope of characteristic, S: 69
Housing: TO-220AB
quick view
1 940 ֏
1 000 ֏
×
from 15 pcs. — 930 ֏
IRF5210PBF, Transistor, P-channel 100V 40A [TO-220AB]
Brand: Infineon
Structure: P-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 40
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.06 Ohm / 38A, 10V
Maximum power dissipation Psi max..W: 200
Slope of characteristic, S: 10
Housing: TO-220AB
quick view
1 940 ֏
1 260 ֏
×
from 50 pcs. — 1 180 ֏
IRFZ24NPBF, Transistor, N-channel 55V 17A [TO-220AB]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 55
Maximum drain-source current at 25 C Isi max..A: 17
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.07 Ohm / 10A, 10V
Maximum power dissipation Psi max..W: 45
Slope of characteristic, S: 4.5
Housing: TO-220AB
quick view
590 ֏
346 ֏
×
from 15 pcs. — 329 ֏
IRFZ48NPBF, Transistor, N-channel 55V 64A [TO-220AB]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 50
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.014 Ohm / 32A, 10V
Maximum power dissipation Psi max..W: 190
Slope of characteristic, S: 27
Housing: TO-220AB
quick view
910 ֏
520 ֏
×
from 15 pcs. — 498 ֏
IRL540NPBF, Transistor, N-channel 100V 36A, [TO-220AB]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 28
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.044 Ohm / 18A, 10V
Maximum power dissipation Psi max..W: 110
Slope of characteristic, S: 12
Housing: TO-220AB
quick view
1 040 ֏
570 ֏
×
from 15 pcs. — 550 ֏
IRLML5103TRPBF, Transistor, P-channel 30V 0.76A logic [Micro3 / SOT-23]
Brand: Infineon
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 0.76
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.6 Ohm / 0.6A, 10V
Maximum power dissipation Psi max..W: 0.54
Slope of characteristic, S: 0.44
Housing: Micro-3/SOT-23-3
quick view
81 ֏ ×
from 100 pcs. — 74 ֏
IRF520NPBF, Transistor, N-channel 100V 9.7A [TO-220AB]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 9.7
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.2 Ohm / 5.7A, 10V
Maximum power dissipation Psi max..W: 48
Slope of characteristic, S: 2.7
Housing: TO-220AB
quick view
730 ֏
431 ֏
×
from 15 pcs. — 415 ֏
IRF530NSTRLPBF, Transistor, N-channel 100V 17A [D2-PAK]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 17
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.09 Ohm / 9A, 10V
Maximum power dissipation Psi max..W: 70
Slope of characteristic, S: 12
Housing: D2PAK(2 Leads+Tab)
quick view
730 ֏
450 ֏
×
from 15 pcs. — 433 ֏
IRF9952TRPBF, Transistor, N / P-channels 30V, [SO-8]
Brand: Infineon
Structure: N / P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 3.5/2.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.1 Ohm / 2.2A, 10V / 0.25 Ohm / 1A, 10V
Maximum power dissipation Psi max..W: 1.3
Slope of characteristic, S: 02.04.2012
Housing: SOIC-8
quick view
467 ֏
286 ֏
×
from 25 pcs. — 270 ֏
IRFB4229PBF, Transistor, N-channel 250V 46A [TO-220AB]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 250
Maximum drain-source current at 25 C Isi max..A: 46
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.046 Ohm / 26A, 10V
Maximum power dissipation Psi max..W: 330
Slope of characteristic, S: 83
Housing: TO-220AB
quick view
4 250 ֏
2 880 ֏
×
from 15 pcs. — 2 870 ֏
IRFI1310NPBF, Nkan transistor 100V 22A [TO-220FP]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 24
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.036 Ohm / 13A, 10V
Maximum power dissipation Psi max..W: 56
Slope of characteristic, S: 14
Housing: TO-220FP
quick view
1 040 ֏
720 ֏
×
from 15 pcs. — 660 ֏
IRFI540NPBF, Transistor, N-channel 100V 20A [TO-220FP]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 17
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.052 Ohm / 11A, 10V
Maximum power dissipation Psi max..W: 33
Slope of characteristic, S: 9
Housing: TO-220FP
quick view
1 460 ֏
910 ֏
×
from 15 pcs. — 900 ֏
IRFL4310TRPBF, Transistor, N-channel 100V 1.6A [SOT-223]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 1.6
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.2 Ohm / 1.6A, 10V
Maximum power dissipation Psi max..W: 3.1
Slope of characteristic, S: 1.5
Housing: SOT-223
quick view
461 ֏
295 ֏
×
from 50 pcs. — 267 ֏
IRFP140NPBF, Transistor, N-channel 100V 33A [TO-247AC]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 33
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.052 Ohm / 16A, 10V
Maximum power dissipation Psi max..W: 140
Slope of characteristic, S: 11
Housing: TO-247AC
quick view
1 700 ֏
1 010 ֏
×
from 15 pcs. — 980 ֏
IRFP2907ZPBF, Transistor, N-channel 75V 170A [TO-247AC]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 75
Maximum drain-source current at 25 C Isi max..A: 170
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0045 Ohm / 90A, 10V
Maximum power dissipation Psi max..W: 310
Housing: TO-247AC
quick view
3 220 ֏
2 340 ֏
×
from 15 pcs. — 2 270 ֏
IRFP3703PBF, N-channel MOSFET transistor 30V 210A [TO-247AC]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 210
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0028 Ohm / 76A, 10V
Maximum power dissipation Psi max..W: 230
Slope of characteristic, S: 150
Housing: Super-247
quick view
3 340 ֏
2 140 ֏
×
from 15 pcs. — 2 110 ֏
IRFP3710PBF, Transistor, N-channel 100V 51A [TO-247AC]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 49
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.025 Ohm / 28A, 10V
Maximum power dissipation Psi max..W: 180
Slope of characteristic, S: 20
Housing: TO-247AC
quick view
2 430 ֏
1 510 ֏
×
from 15 pcs. — 1 480 ֏
IRFU5305PBF, Transistor, P-channel 55V 28A [I-PAK]
Brand: Infineon
Structure: P-channel
Maximum drain-source voltage Usi, V: 55
Maximum drain-source current at 25 C Isi max..A: 31
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.065 Ohm / 16A, 10V
Maximum power dissipation Psi max..W: 110
Slope of characteristic, S: 8
Housing: IPAK
quick view
1 280 ֏
710 ֏
×
from 15 pcs. — 660 ֏
IRL3803PBF, N-channel transistor 30V 120A [TO-220AB]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 140
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.006 Ohm / 71A, 10V
Maximum power dissipation Psi max..W: 200
Slope of characteristic, S: 55
Housing: TO-220AB
quick view
1 700 ֏
1 080 ֏
×
from 15 pcs. — 1 060 ֏
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