Field effect transistors N-channel

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Maximum drain-source voltage Usi, V
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Maximum drain-source current at 25 C Isi max..A
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Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)
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Slope of characteristic, S
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2N7002,215, Transistor, N-channel, 60V, 0.3A [SOT-23]
6648 pcs.
Brand: Nexperia
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 5 Ohm / 0.5A, 10V
Maximum power dissipation Psi max..W: 0.83
Housing: SOT-23-3
quick view
6648 pcs.
128 ֏
68 ֏
×
from 100 pcs. — 56 ֏
2N7002K, Transistor N-MOSFET 60V 0.3A [SOT-23-3] (2N7002K-T1-GE3)
7130 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 2 Ohm / 0.5A, 10V
Maximum power dissipation Psi max..W: 0.35
Housing: SOT-23-3
quick view
7130 pcs.
49 ֏
16 ֏
×
from 100 pcs. — 12 ֏
2N7002K-T1-GE3, N-CH Si 60V 0.3A 3-Pin Transistor [SOT-23]
Brand: Vishay
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 2 Ohm / 0.5A, 10V
Maximum power dissipation Psi max..W: 0.35
Housing: SOT-23-3
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79 ֏
47 ֏
×
from 100 pcs. — 39 ֏
2SK170-BL, Transistor, N-channel [TO-92]
1423 pcs.
Brand: Toshiba
Structure: N-channel
Maximum drain-source voltage Usi, V: 40
Maximum drain-source current at 25 C Isi max..A: 0.01
Maximum power dissipation Psi max..W: 0.4
Slope of characteristic, S: 22
Housing: TO-92/SC-43/2-5F1D
quick view
1423 pcs.
910 ֏
492 ֏
×
2SK3878(STA1,E,S), Transistor N-channel 900V 9A [TO-3P]
806 pcs.
Brand: Toshiba
Structure: N-channel
Maximum drain-source voltage Usi, V: 900
Maximum drain-source current at 25 C Isi max..A: 9
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 1.3 Ohm / 4A, 10V
Maximum power dissipation Psi max..W: 150
Slope of characteristic, S: 7
Housing: SC-65/2-16C1B
quick view
806 pcs.
2 670 ֏
1 740 ֏
×
AO3400A, N-MOSFET 30V 5.7A [SOT-23-3]
Brand: Alpha & Omega
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 5.8
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0265 Ohm / 5.7A, 10V
Maximum power dissipation Psi max..W: 1.4
Slope of characteristic, S: 33
Housing: SOT-23-3
quick view
425 ֏
239 ֏
×
from 100 pcs. — 226 ֏
AON6414AL, MOSFET N-channel 30V [DFN-8 (5x6)]
Brand: Alpha & Omega
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 13
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.008 ohm/20A, 10V
Maximum power dissipation Psi max..W: 2.3
Housing: DFN-8(5X6)
quick view
890 ֏ ×
from 10 pcs. — 880 ֏
AON6512, MOSFET, N-channel, 30 V, 54 A, [DFN-8 5X6 EP]
Brand: Alpha & Omega
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 54
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0017 Ohm / 20A, 10V
Maximum power dissipation Psi max..W: 7.4
Slope of characteristic, S: 85
Housing: DFN-8(5X6)
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730 ֏ ×
from 15 pcs. — 700 ֏
AUIRLR2905Z, Transistor, Auto Q101 Nkan 55V 60A [D-PAK]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 55
Maximum drain-source current at 25 C Isi max..A: 60
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.027 Ohm / 25A, 10V
Maximum power dissipation Psi max..W: 110
Slope of characteristic, S: 21
Housing: DPAK(2 Leads+Tab)
quick view
1 940 ֏
1 290 ֏
×
from 15 pcs. — 1 250 ֏
BS170, Transistor, N-channel, 60V, 0.5A [TO-92]
Brand: ON Semiconductor
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 5 Ohm / 0.2A, 10V
Maximum power dissipation Psi max..W: 0.83
Slope of characteristic, S: 0.32
Housing: TO-92
quick view
140 ֏
82 ֏
×
from 100 pcs. — 71 ֏
BSC350N20NSFDATMA1, MOSFET N-channel 200V 35A [TDSON-8 EP]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 200
Maximum drain-source current at 25 C Isi max..A: 35
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.035 ohm/35A, 10V
Maximum power dissipation Psi max..W: 150
Housing: PG-TDSON-8
quick view
1 460 ֏
980 ֏
×
from 15 pcs. — 970 ֏
BSS138, Transistor, N-channel, 50V, 0.22A [SOT-23-3] (=BSS138LT1G, BSS138-7-F)
12315 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 50
Maximum drain-source current at 25 C Isi max..A: 0.22
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 3.5 Ohm / 0.22A, 10V
Maximum power dissipation Psi max..W: 0.36
Slope of characteristic, S: 0.1
Housing: SOT-23-3
quick view
12315 pcs.
31 ֏
16 ֏
×
from 100 pcs. — 12 ֏
FDD8447L, Transistor, N-channel 40V 50A [D-PAK]
Brand: Fairchild
Structure: N-channel
Maximum drain-source voltage Usi, V: 40
Maximum drain-source current at 25 C Isi max..A: 50
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0085 Ohm / 14A, 10V
Maximum power dissipation Psi max..W: 44
Slope of characteristic, S: 58
Housing: DPAK(2 Leads+Tab)
quick view
1 160 ֏
570 ֏
×
from 15 pcs. — 540 ֏
FDPF12N60NZ, N-channel transistor 600V 12A (= FQPF12N60C), [TO-220F]
Brand: ON Semiconductor
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 12
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.65 Ohm / 6A, 10V
Maximum power dissipation Psi max..W: 39
Slope of characteristic, S: 13.5
Housing: TO-220F
quick view
1 940 ֏
1 200 ֏
×
from 15 pcs. — 1 160 ֏
FDPF4N60NZ, Transistor, UniFET II, N-channel, 600V, 3.8A, 2.5Ohm (= SSS4N60B), [TO-220FP]
Brand: ON Semiconductor
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 3.8
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 2.5 Ohm / 1.9A, 10V
Maximum power dissipation Psi max..W: 28
Slope of characteristic, S: 3.3
Housing: TO-220F
quick view
1 400 ֏
790 ֏
×
from 15 pcs. — 780 ֏
FDV303N, Transistor, Digital FET, N-channel 25V 680mA [SOT-23]
Brand: Fairchild
Structure: N-channel
Maximum drain-source voltage Usi, V: 25
Maximum drain-source current at 25 C Isi max..A: 0.68
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.45 Ohm / 0.5A, 4.5V
Maximum power dissipation Psi max..W: 0.35
Slope of characteristic, S: 1.45
Housing: SOT-23-3
quick view
110 ֏
73 ֏
×
from 50 pcs. — 65 ֏
FQP4N90C, Transistor, N-channel 900V 4A [TO-220]
Brand: ON Semiconductor
Structure: N-channel
Maximum drain-source voltage Usi, V: 900
Maximum drain-source current at 25 C Isi max..A: 4
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 4.2 Ohm / 2A, 10V
Maximum power dissipation Psi max..W: 140
Slope of characteristic, S: 5
Housing: to-220
quick view
1 280 ֏
770 ֏
×
from 15 pcs. — 760 ֏
FQP50N06, Transistor, N-channel 60V 50A [TO-220]
Brand: Fairchild
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 50
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.022 Ohm / 25A, 10V
Maximum power dissipation Psi max..W: 120
Slope of characteristic, S: 40
Housing: to-220
quick view
1 400 ֏
780 ֏
×
from 15 pcs. — 760 ֏
FQPF10N60C, Transistor, N-channel 600V 9.5A [TO-220F]
Brand: ON Semiconductor
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 9.5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.73 Ohm / 4.75A, 10V
Maximum power dissipation Psi max..W: 156
Slope of characteristic, S: 8
Housing: TO-220F
quick view
1 460 ֏
930 ֏
×
from 15 pcs. — 910 ֏
FQPF8N60CFT, Transistor, N-channel 600V 7.5A (= SSP7N60B), [TO-220F]
Brand: ON Semiconductor
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 7
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 1.5 Ohm / 3.13A, 10V
Maximum power dissipation Psi max..W: 147
Slope of characteristic, S: 8.2
Housing: TO-220F
quick view
1 460 ֏
900 ֏
×
from 15 pcs. — 880 ֏
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