P-channel field effect transistors

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AO3401A, P-MOSFET Transistor 30V 4A [SOT-23-3.]
5512 pcs.
Brand: Alpha & Omega
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 4
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.044 Ohm / 4.3A, 10V
Maximum power dissipation Psi max..W: 1.4
Slope of characteristic, S: 17
Housing: SOT-23-3
quick view
5512 pcs.
425 ֏
221 ֏
×
from 100 pcs. — 172 ֏
AO3407A, P-MOSFET 30V 4.3A [SOT-23-3]
3986 pcs.
Brand: Alpha & Omega
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 4.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.048 Ohm / 4.3A, 10V
Maximum power dissipation Psi max..W: 1.4
Slope of characteristic, S: 10
Housing: SOT-23-3
quick view
3986 pcs.
530 ֏
290 ֏
×
from 25 pcs. — 221 ֏
AO4407AL, P-MOSFET 30V 12A [SOIC-8]
1523 pcs.
Brand: Alpha & Omega
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 12
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.011 Ohm / 12A, 20V
Maximum power dissipation Psi max..W: 3.1
Slope of characteristic, S: 21
Housing: SOIC-8
quick view
1523 pcs.
730 ֏
485 ֏
×
from 25 pcs. — 467 ֏
BSH201,215, MOSFET P-CH 60V 0.3A [SOT-23]
2588 pcs.
Brand: Nexperia
Structure: P-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 2.5 Ohm / 0.16A, 10V
Maximum power dissipation Psi max..W: 0.417
Slope of characteristic, S: 0.35
Housing: SOT-23-3
quick view
2588 pcs.
164 ֏
73 ֏
×
from 100 pcs. — 60 ֏
BSS84,215, Transistor, P-channel, 50V 130mA [SOT-23]
4134 pcs.
Brand: Nexperia
Structure: P-channel
Maximum drain-source voltage Usi, V: 50
Maximum drain-source current at 25 C Isi max..A: 0.13
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 10 Ohm / 0.1A, 5V
Maximum power dissipation Psi max..W: 0.36
Slope of characteristic, S: 270
Housing: SOT-23-3
quick view
4134 pcs.
27 ֏ ×
from 100 pcs. — 23 ֏
FDD6637-VB, 30V 80A P-MOSFET Transistor [DPAK /TO-252]
6996 pcs.
Brand: VBsemi
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 80
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.011 Ohm / 30A, 10V
Maximum power dissipation Psi max..W: 187
Slope of characteristic, S: 20
Housing: DPAK(2 Leads+Tab)
quick view
6996 pcs.
540 ֏
233 ֏
×
from 100 pcs. — 212 ֏
FDS9435A, Transistor, PowerTrench, P-channel, 30V 5.3A [SO-8]
215 pcs.
Brand: ON Semiconductor
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 5.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.05 Ohm / 5.3A, 10V
Maximum power dissipation Psi max..W: 2.5
Slope of characteristic, S: 10
Housing: SOIC-8
quick view
215 pcs.
407 ֏
274 ֏
×
from 25 pcs. — 234 ֏
FDV304P, P-CH 25V 460MA Transistor [SOT-23]
3608 pcs.
Brand: Fairchild
Structure: P-channel
Maximum drain-source voltage Usi, V: 25
Maximum drain-source current at 25 C Isi max..A: 0.46
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 1.1 Ohm / 0.5A, 4.5V
Maximum power dissipation Psi max..W: 0.35
Slope of characteristic, S: 0.8
Housing: SOT-23-3
quick view
3608 pcs.
128 ֏
50 ֏
×
from 100 pcs. — 41 ֏
IRF4905PBF, Transistor, P-channel 55V 74A [TO-220AB]
2513 pcs.
Brand: Infineon
Structure: P-channel
Maximum drain-source voltage Usi, V: 55
Maximum drain-source current at 25 C Isi max..A: 74
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.02Ohms/38A, 10V
Maximum power dissipation Psi max..W: 200
Slope of characteristic, S: 21
Housing: TO-220
quick view
2513 pcs.
730 ֏
432 ֏
×
from 50 pcs. — 368 ֏
IRF4905STRLPBF, 55V 42A 170W P-MOSFET Transistor [D2PAK.]
1266 pcs.
Brand: Infineon
Structure: P-channel
Maximum drain-source voltage Usi, V: 55
Maximum drain-source current at 25 C Isi max..A: 42
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.02Ohms/42A, 10V
Maximum power dissipation Psi max..W: 170
Slope of characteristic, S: 19
Housing: d2pak
quick view
1266 pcs.
680 ֏ ×
from 50 pcs. — 570 ֏
IRF5210PBF, Transistor, P-channel 100V 40A [TO-220AB]
397 pcs.
Brand: Infineon
Structure: P-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 40
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.06 Ohm / 38A, 10V
Maximum power dissipation Psi max..W: 200
Slope of characteristic, S: 10
Housing: TO-220AB
quick view
397 pcs.
1 940 ֏
670 ֏
×
from 50 pcs. — 570 ֏
IRF5305PBF, Transistor, P-channel 55V 31A [TO-220AB]
1864 pcs.
Brand: Infineon
Structure: P-channel
Maximum drain-source voltage Usi, V: 55
Maximum drain-source current at 25 C Isi max..A: 31
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.06 Ohm / 16A, 10V
Maximum power dissipation Psi max..W: 110
Slope of characteristic, S: 8
Housing: TO-220AB
quick view
1864 pcs.
910 ֏
307 ֏
×
from 15 pcs. — 260 ֏
IRF7425TRPBF, Transistor P-channel -20V -15A logic [SO-8]
685 pcs.
Brand: Infineon
Structure: P-channel
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 15
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0082 Ohm/15A, 4.5V
Maximum power dissipation Psi max..W: 2.5
Slope of characteristic, S: 44
Housing: SOIC-8
quick view
685 pcs.
1 160 ֏
730 ֏
×
from 25 pcs. — 620 ֏
IRF9530NPBF, Transistor, P-channel 100V 14A [TO-220AB]
586 pcs.
Brand: Infineon
Structure: P-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 14
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.2 Ohm / 8.4A, 10V
Maximum power dissipation Psi max..W: 79
Slope of characteristic, S: 3.2
Housing: TO-220AB
quick view
586 pcs.
231 ֏ ×
from 15 pcs. — 197 ֏
IRF9540NPBF, Transistor, P-channel 100V 23A [TO-220AB]
1275 pcs.
Brand: Infineon
Structure: P-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 23
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.117 Ohm / 11A, 10V
Maximum power dissipation Psi max..W: 140
Slope of characteristic, S: 5.3
Housing: TO-220AB
quick view
1275 pcs.
189 ֏ ×
from 15 pcs. — 162 ֏
IRF9Z24NPBF, Transistor, P-channel 55V 12A [TO-220AB]
1470 pcs.
Brand: Infineon
Structure: P-channel
Maximum drain-source voltage Usi, V: 55
Maximum drain-source current at 25 C Isi max..A: 12
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.175 Ohm / 7.2A, 10V
Maximum power dissipation Psi max..W: 45
Slope of characteristic, S: 2.5
Housing: TO-220AB
quick view
1470 pcs.
310 ֏
175 ֏
×
from 10 pcs. — 148 ֏
IRF9Z34NPBF, Transistor, P-channel 55V 19A [TO-220AB]
454 pcs.
Brand: Infineon
Structure: P-channel
Maximum drain-source voltage Usi, V: 55
Maximum drain-source current at 25 C Isi max..A: 19
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.1 Ohm / 10A, 10V
Maximum power dissipation Psi max..W: 68
Slope of characteristic, S: 4.2
Housing: TO-220AB
quick view
454 pcs.
155 ֏ ×
from 15 pcs. — 133 ֏
IRFH9310TRPBF, Transistor, P-channel 30V 40A [PQFN-5x6]
265 pcs.
Brand: Infineon
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 21
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0046 Ohm / 21A, 10V
Maximum power dissipation Psi max..W: 3.1
Slope of characteristic, S: 39
Housing: PQFN-8(5X6)
quick view
265 pcs.
620 ֏ ×
from 15 pcs. — 530 ֏
IRFL9014TRPBF, Transistor, P-channel 60V 1.8A [SOT-223] (= IRFL9014PBF)
3322 pcs.
Brand: Vishay
Structure: P-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 1.8
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.5 Ohm / 1.1A, 10V
Maximum power dissipation Psi max..W: 3.1
Slope of characteristic, S: 1.3
Housing: SOT-223
quick view
3322 pcs.
970 ֏
305 ֏
×
from 50 pcs. — 257 ֏
IRFR5305TRPBF, P-CH 55V 31A Transistor [D-PAK]
1886 pcs.
Brand: Infineon
Structure: P-channel
Maximum drain-source voltage Usi, V: 55
Maximum drain-source current at 25 C Isi max..A: 28
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.065 Ohm / 16A, 10V
Maximum power dissipation Psi max..W: 110
Slope of characteristic, S: 8
Housing: DPAK(2 Leads+Tab)
quick view
1886 pcs.
790 ֏
250 ֏
×
from 50 pcs. — 211 ֏
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