Field effect transistors ST Microelectronics

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Maximum drain-source voltage Usi, V
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Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)
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Slope of characteristic, S
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STD17NF03LT4, MOSFET, N-channel, 17 A, 30 V, 50 mOhm, 16 V, 1.5 V, [TO-252]
2421 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 17
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.05 Ohm / 8.5A, 10V
Maximum power dissipation Psi max..W: 30
Slope of characteristic, S: 12
Housing: DPAK(2 Leads+Tab)
quick view
2421 pcs.
382 ֏
279 ֏
×
from 15 pcs. — 270 ֏
STF3NK80Z, Transistor, Zener-Protected SuperMESH, N-channel 800V 2.5A [TO-220FP]
302 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 800
Maximum drain-source current at 25 C Isi max..A: 2.5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 4.5 Ohm / 1.25A, 10V
Maximum power dissipation Psi max..W: 25
Slope of characteristic, S: 2.1
Housing: TO-220FP
quick view
302 pcs.
790 ֏
473 ֏
×
from 15 pcs. — 442 ֏
STN4NF20L, Transistor, MOSFET N-CH 200V 1A [SOT-223]
983 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 200
Maximum drain-source current at 25 C Isi max..A: 1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 1.5 Ohm / 0.5A, 10V
Maximum power dissipation Psi max..W: 3.3
Housing: SOT-223
quick view
983 pcs.
385 ֏ ×
from 50 pcs. — 372 ֏
STP10NK60Z, Transistor, Zener-protected SuperMESH, N-channel, 600 V, 0.65 Ohm, 10A [TO-220AB]
223 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 10
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.75 Ohm / 4.5A, 10V
Maximum power dissipation Psi max..W: 115
Slope of characteristic, S: 7.8
Housing: to-220
quick view
223 pcs.
1 040 ֏
570 ֏
×
from 15 pcs. — 540 ֏
STP10NK60ZFP, Transistor, Zener-protected SuperMESH, N-channel, 600 V, 0.65 Ohm, 10A [TO-220FP]
293 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 10
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.75 Ohm / 4.5A, 10V
Maximum power dissipation Psi max..W: 35
Housing: TO-220FP
quick view
293 pcs.
1 040 ֏
550 ֏
×
from 15 pcs. — 495 ֏
STP20NM60FP, Transistor, MDmesh, N-channel, 600V 20A, [TO-220FP]
544 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.29 Ohm / 10A, 10V
Maximum power dissipation Psi max..W: 45
Slope of characteristic, S: 11
Housing: TO-220FP
quick view
544 pcs.
2 430 ֏
1 640 ֏
×
from 15 pcs. — 1 610 ֏
STP4NK60ZFP, MOSFET N-CH 600V 4A [TO-220FP]
72 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 4
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 2 Ohm / 2A, 10V
Maximum power dissipation Psi max..W: 25
Slope of characteristic, S: 3
Housing: TO-220FP
quick view
72 pcs.
207 ֏
141 ֏
×
from 5 pcs. — 131 ֏
STP55NF06, Transistor, STripFET II, N-channel, 60V 50A [TO-220AB]
371 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 50
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.018 Ohm / 27.5A, 10V
Maximum power dissipation Psi max..W: 110
Housing: to-220
quick view
371 pcs.
790 ֏
431 ֏
×
from 15 pcs. — 410 ֏
STP5NK80ZFP, Transistor, Zener-Protected SuperMESH, N-channel, 800V, 1.9 Ohm, 4.3A [TO-220FP]
341 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 800
Maximum drain-source current at 25 C Isi max..A: 4.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 2.4 Ohm / 2.15A, 10V
Maximum power dissipation Psi max..W: 30
Housing: TO-220FP
quick view
341 pcs.
1 280 ֏
760 ֏
×
from 15 pcs. — 740 ֏
STP60NF06, Transistor, STripFET II, N-channel, 60V, 0.014Ohm, 60A [TO-220AB]
1652 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 60
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.016 Ohm / 30A, 10V
Maximum power dissipation Psi max..W: 110
Housing: to-220
quick view
1652 pcs.
730 ֏
520 ֏
×
from 15 pcs. — 491 ֏
STP6NK60ZFP, Transistor, Zener-Protected SuperMESH, N-Channel, 600V, 1 Ohm, 6A [TO-220FP]
1497 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 6
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 1.2 Ohm / 3A, 10V
Maximum power dissipation Psi max..W: 32
Slope of characteristic, S: 5
Housing: TO-220FP
quick view
1497 pcs.
850 ֏
540 ֏
×
from 15 pcs. — 510 ֏
STP6NK90ZFP, Transistor, Zener-Protected SuperMESH, N-channel, 900V, 1.56 Ohm, 5.8A [TO-220FP]
357 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 900
Maximum drain-source current at 25 C Isi max..A: 5.8
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 2 Ohm / 2.9A, 10V
Maximum power dissipation Psi max..W: 30
Slope of characteristic, S: 5
Housing: TO-220FP
quick view
357 pcs.
1 730 ֏ ×
from 15 pcs. — 1 640 ֏
STP75NF75, Transistor, STRIPFET II, N-channel, 75V, 0.0095Ohm, 80A [TO-220AB]
311 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 75
Maximum drain-source current at 25 C Isi max..A: 80
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.011 Ohm / 40A, 10V
Maximum power dissipation Psi max..W: 45
Slope of characteristic, S: 20
Housing: to-220
quick view
311 pcs.
1 700 ֏
1 070 ֏
×
from 15 pcs. — 1 050 ֏
STW34NM60N, Transistor, MDmesh II, N-channel, 600V, 0.092Ohm, 31.5A [TO-247]
112 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 31.5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.105 Ohm / 14.5A, 10V
Maximum power dissipation Psi max..W: 250
Housing: TO-247
quick view
112 pcs.
5 100 ֏
3 690 ֏
×
from 15 pcs. — 3 630 ֏
STW9NK90Z, Transistor, Zener-Protected SuperMESH, N-Channel, 900V, 1.1Ohm, 8A [TO-247]
212 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 900
Maximum drain-source current at 25 C Isi max..A: 8
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 1.3 Ohm / 3.6A, 10V
Maximum power dissipation Psi max..W: 160
Housing: TO-247
quick view
212 pcs.
2 130 ֏
1 550 ֏
×
from 15 pcs. — 1 520 ֏
IRF630, Transistor, N-channel 200V 9A [TO-220AB]
11 days, 802 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 200
Maximum drain-source current at 25 C Isi max..A: 9
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.4 Ohm / 4.5A, 10V
Maximum power dissipation Psi max..W: 74
Slope of characteristic, S: 3.8
Housing: TO-220AB
quick view
11 days,
802 pcs.
910 ֏
590 ֏
×
from 15 pcs. — 520 ֏
STB140NF75T4, MOSFET N-channel 75V 120A [D2-PAK]
11 days, 215 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 75
Maximum drain-source current at 25 C Isi max..A: 120
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.075 Ohm/70A, 10V
Maximum power dissipation Psi max..W: 310
Housing: D2PAK(2 Leads+Tab)
quick view
11 days,
215 pcs.
1 940 ֏ ×
from 15 pcs. — 1 900 ֏
STB55NF06T4, N-channel transistor 60V 50A [D2-PAK]
11 days, 724 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 50
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.018 Ohm / 27.5A, 10V
Maximum power dissipation Psi max..W: 110
Slope of characteristic, S: 18
Housing: D2PAK(2 Leads+Tab)
quick view
11 days,
724 pcs.
730 ֏
497 ֏
×
from 15 pcs. — 464 ֏
STB9NK60ZT4, Transistor, Zener-protected SuperMESH, N-channel 600V 7A [D2-PAK]
11 days, 714 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 7
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.95 Ohm / 3.5A, 10V
Maximum power dissipation Psi max..W: 125
Slope of characteristic, S: 5.3
Housing: D2PAK(2 Leads+Tab)
quick view
11 days,
714 pcs.
1 660 ֏ ×
from 15 pcs. — 1 620 ֏
STD10NM60N, Transistor, MDmesh II, N-channel, 600 V, 0.53 Ohm, 10 A [D-PAK]
11 days, 1357 pcs.
Brand: ST Microelectronics
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 10
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.6 Ohm / 4A, 10V
Maximum power dissipation Psi max..W: 70
Housing: DPAK(2 Leads+Tab)
quick view
11 days,
1357 pcs.
930 ֏ ×
from 50 pcs. — 800 ֏
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