MOSFET and IGBT Drivers Infineon Technologies
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Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 3
Peak output current rise (Source), A: 0.21
Peak output current slope (Sink), A: 0.36
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 100
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: dip-8(0.300 inch)
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1 160 ֏
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760 ֏ from 5 pcs. — 740 ֏
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Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 3.3…20
Logic voltage (VIL), V: 6
Logic voltage (VIH), V: 9.5
Peak output current rise (Source), A: 2
Peak output current slope (Sink), A: 2
Input type: non-inverting
Maximum bias voltage, V: 500
Rise Time, ns: 25
Nominal decay time (Fall Time), ns: 17
Operating temperature, ° C: -40…+150(TJ)
Housing: DIP-14(0.300 inch)
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2 430 ֏
×
1 510 ֏ from 5 pcs. — 1 490 ֏
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Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 3
Peak output current rise (Source), A: 0.21
Peak output current slope (Sink), A: 0.36
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 100
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-8(0.154 inch)
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345 ֏
×
from 10 pcs. — 324 ֏
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Brand: Infineon
Configuration: half-bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 3
Peak output current rise (Source), A: 0.21
Peak output current slope (Sink), A: 0.36
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 100
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-8(0.154 inch)
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560 ֏
×
from 10 pcs. — 520 ֏
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Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 3.3…20
Logic voltage (VIL), V: 6
Logic voltage (VIH), V: 9.5
Peak output current rise (Source), A: 2
Peak output current slope (Sink), A: 2
Input type: non-inverting
Maximum bias voltage, V: 500
Rise Time, ns: 25
Nominal decay time (Fall Time), ns: 17
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-16(0.295 inch)
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1 280 ֏
×
840 ֏ from 10 pcs. — 780 ֏
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Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 3.3…20
Logic voltage (VIL), V: 6
Logic voltage (VIH), V: 9.5
Peak output current rise (Source), A: 2
Peak output current slope (Sink), A: 2
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 25
Nominal decay time (Fall Time), ns: 17
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-16(0.295 inch)
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1 940 ֏
×
1 230 ֏ from 5 pcs. — 1 210 ֏
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Brand: Infineon
Configuration: half-bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…15.6
Input type: RC input circuit
Maximum bias voltage, V: 600
Rise Time, ns: 80
Nominal decay time (Fall Time), ns: 45
Operating temperature, ° C: -40…+125(TJ)
Housing: dip-8(0.300 inch)
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1 640 ֏
×
970 ֏ from 5 pcs. — 920 ֏
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Brand: Infineon
Configuration: half-bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…15.6
Input type: RC input circuit
Maximum bias voltage, V: 600
Rise Time, ns: 80
Nominal decay time (Fall Time), ns: 45
Operating temperature, ° C: -40…+125(TJ)
Housing: soic-8(0.154 inch)
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1 280 ֏
×
780 ֏ from 5 pcs. — 770 ֏
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Brand: Infineon
Configuration: Low-Side
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 6…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.7
Peak output current rise (Source), A: 2.3
Peak output current slope (Sink), A: 3.3
Input type: non-inverting
Rise Time, ns: 15
Nominal decay time (Fall Time), ns: 10
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-8(0.154 inch)
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1 280 ֏
×
890 ֏ from 10 pcs. — 840 ֏
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Brand: Infineon
Configuration: half-bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 3
Peak output current rise (Source), A: 0.21
Peak output current slope (Sink), A: 0.36
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 100
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: dip-8(0.300 inch)
|
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1 400 ֏
×
870 ֏ from 5 pcs. — 820 ֏
|
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Brand: Infineon
Configuration: half-bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…15.6
Input type: RC input circuit
Maximum bias voltage, V: 600
Rise Time, ns: 80
Nominal decay time (Fall Time), ns: 45
Operating temperature, ° C: -40…+125(TJ)
Housing: dip-8(0.300 inch)
|
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1 940 ֏
×
1 470 ֏ from 5 pcs. — 1 400 ֏
|
||
Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.7
Peak output current rise (Source), A: 1.9
Peak output current slope (Sink), A: 2.3
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 40
Nominal decay time (Fall Time), ns: 20
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-14(0.154 inch)
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6 400 ֏
×
4 110 ֏ from 5 pcs. — 4 060 ֏
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Brand: Infineon
Configuration: Low-Side
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 6…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.7
Peak output current rise (Source), A: 2.3
Peak output current slope (Sink), A: 3.3
Input type: non-inverting
Rise Time, ns: 15
Nominal decay time (Fall Time), ns: 10
Operating temperature, ° C: -40…+150(TJ)
Housing: dip-8(0.300 inch)
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1 460 ֏
×
990 ֏ from 5 pcs. — 980 ֏
|
||
Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 6
Logic voltage (VIH), V: 9.5
Peak output current rise (Source), A: 3
Peak output current slope (Sink), A: 3
Input type: non-inverting
Maximum bias voltage, V: 200
Rise Time, ns: 10
Nominal decay time (Fall Time), ns: 15
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-16(0.295 inch)
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3 820 ֏
×
2 460 ֏ from 5 pcs. — 2 430 ֏
|
||
Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 3
Peak output current rise (Source), A: 0.21
Peak output current slope (Sink), A: 0.36
Input type: inverting
Maximum bias voltage, V: 600
Rise Time, ns: 100
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-8(0.154 inch)
|
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1 460 ֏
×
970 ֏ from 5 pcs. — 950 ֏
|
||
Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 3
Peak output current rise (Source), A: 0.21
Peak output current slope (Sink), A: 0.36
Input type: Inverting, Non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 100
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-8(0.154 inch)
|
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910 ֏
×
520 ֏ from 5 pcs. — 435 ֏
|
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Brand: Infineon
Configuration: half-bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.9
Peak output current rise (Source), A: 0.2
Peak output current slope (Sink), A: 0.35
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 150
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-8(0.154 inch)
|
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1 890 ֏
×
from 5 pcs. — 1 870 ֏
|
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Brand: Infineon
Configuration: half-bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.9
Peak output current rise (Source), A: 0.2
Peak output current slope (Sink), A: 0.35
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 150
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-8(0.154 inch)
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1 400 ֏
×
1 000 ֏ from 5 pcs. — 960 ֏
|
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Brand: Infineon
Configuration: half-bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 8.3
Logic voltage (VIH), V: 12.6
Peak output current rise (Source), A: 0.25
Peak output current slope (Sink), A: 0.5
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 80
Nominal decay time (Fall Time), ns: 40
Operating temperature, ° C: -40…+150(TJ)
Housing: dip-8(0.300 inch)
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1 940 ֏
×
1 150 ֏ from 5 pcs. — 1 130 ֏
|
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Brand: Infineon
Configuration: High-Side/Low-Side
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 6
Logic voltage (VIH), V: 9.5
Peak output current rise (Source), A: 0.25
Peak output current slope (Sink), A: 0.5
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 80
Nominal decay time (Fall Time), ns: 40
Operating temperature, ° C: -40…+150(TJ)
Housing: soic-16(0.295 inch)
|
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1 940 ֏
×
1 660 ֏ from 5 pcs. — 1 590 ֏
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