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Insulated Gate Bipolar Transistors ST Microelectronics

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STGP7NC60HD, Transistor, fast IGBT with Ultrafast diode, 600V, 25A [TO-220] 417 pcs. Brand: ST Microelectronics Technology / Family: powermesh Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 25 Pulse collector current (Icm), A: 50 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 80 Turn-on delay time (td (on)) at at 25 ° C, ns: 18.5 Turn-off delay time (td (off)) at at 25 ° C, ns: 72 Operating temperature (Tj), ° C: -55…+150 Housing: to-220	quick view	417 pcs.	1 400 ֏ 1 200 ֏ × from 15 pcs. — 1 130 ֏
STGW20NC60VD, IGBT transistor 600V 30A 200W [TO-247] 157 pcs. Brand: ST Microelectronics Technology / Family: powermesh Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 60 Pulse collector current (Icm), A: 150 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 200 Turn-on delay time (td (on)) at at 25 ° C, ns: 31 Turn-off delay time (td (off)) at at 25 ° C, ns: 100 Operating temperature (Tj), ° C: -55…+150 Housing: to-247	quick view	157 pcs.	3 340 ֏ 2 180 ֏ × from 15 pcs. — 2 160 ֏
STGB10NB37LZT4, IGBT transistor, 440 V, 20 A, 125 W, [D2-PAK] 5-7 days, 591 pcs. Brand: ST Microelectronics Technology / Family: PowerMESH, Internally Clamped Built-in diode: no Maximum CE voltage, V: 440 Maximum CE current at 25 ° C, A: 20 Pulse collector current (Icm), A: 40 Saturation voltage at rated current, V: 1.8 Maximum power dissipation, W: 125 Turn-on delay time (td (on)) at at 25 ° C, ns: 1300 Turn-off delay time (td (off)) at at 25 ° C, ns: 8000 Operating temperature (Tj), ° C: -65…+175 Housing: d2pak	quick view	5-7 days, 591 pcs.	2 910 ֏ 1 870 ֏ × from 15 pcs. — 1 700 ֏
STGB10NC60HDT4, N-CH 600V 20A IGBT [D2-PAK] 5-7 days, 49 pcs. Brand: ST Microelectronics Technology / Family: powermesh Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 20 Pulse collector current (Icm), A: 30 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 65 Turn-on delay time (td (on)) at at 25 ° C, ns: 14.2 Turn-off delay time (td (off)) at at 25 ° C, ns: 72 Operating temperature (Tj), ° C: -55…+150 Housing: d2pak	quick view	5-7 days, 49 pcs.	1 160 ֏ 880 ֏ × from 15 pcs. — 830 ֏
STGF10NC60KD, Transistor IGBT 600V 9A 25W [TO-220FP] 5-7 days, 51 pcs. Brand: ST Microelectronics Technology / Family: powermesh Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 9 Pulse collector current (Icm), A: 30 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 25 Turn-on delay time (td (on)) at at 25 ° C, ns: 17 Turn-off delay time (td (off)) at at 25 ° C, ns: 72 Operating temperature (Tj), ° C: -55…+150 Housing: to-220fp	quick view	5-7 days, 51 pcs.	1 390 ֏ × from 15 pcs. — 1 320 ֏
STGF19NC60KD, Transistor IGBT 600V 16A 32W [TO-220FP] 5-7 days, 349 pcs. Brand: ST Microelectronics Technology / Family: powermesh Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 16 Pulse collector current (Icm), A: 75 Saturation voltage at rated current, V: 2.75 Maximum power dissipation, W: 32 Turn-on delay time (td (on)) at at 25 ° C, ns: 30 Turn-off delay time (td (off)) at at 25 ° C, ns: 105 Operating temperature (Tj), ° C: -55…+150 Housing: to-220fp	quick view	5-7 days, 349 pcs.	2 190 ֏ 1 400 ֏ × from 15 pcs. — 1 380 ֏
STGP10NC60KD, Transistor, IGBT, short-circuit proof, 600V, 10A [TO-220] 5-7 days, 751 pcs. Brand: ST Microelectronics Technology / Family: powermesh Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 20 Pulse collector current (Icm), A: 30 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 65 Turn-on delay time (td (on)) at at 25 ° C, ns: 17 Turn-off delay time (td (off)) at at 25 ° C, ns: 72 Operating temperature (Tj), ° C: -55…+150 Housing: to-220	quick view	5-7 days, 751 pcs.	1 170 ֏ × from 15 pcs. — 1 120 ֏
STGP19NC60HD, PowerMESH IGBT VERY FAST 600V 40A [TO-220-3] 5-7 days, 358 pcs. Brand: ST Microelectronics Technology / Family: powermesh Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 40 Pulse collector current (Icm), A: 60 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 130 Turn-on delay time (td (on)) at at 25 ° C, ns: 25 Turn-off delay time (td (off)) at at 25 ° C, ns: 97 Operating temperature (Tj), ° C: -55…+150 Housing: to-220	quick view	5-7 days, 358 pcs.	3 160 ֏ 2 060 ֏ × from 15 pcs. — 2 040 ֏
STGP19NC60KD, Transistor, IGBT, short circuit proof, 600V, 20A [TO-220] 5-7 days, 333 pcs. Brand: ST Microelectronics Technology / Family: powermesh Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 40 Pulse collector current (Icm), A: 60 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 130 Turn-on delay time (td (on)) at at 25 ° C, ns: 25 Turn-off delay time (td (off)) at at 25 ° C, ns: 97 Operating temperature (Tj), ° C: -55…+150 Housing: to-220	quick view	5-7 days, 333 pcs.	700 ֏ × from 15 pcs. — 640 ֏
STGP8NC60KD, Transistor, IGBT, short circuit proof, 600V, 8A [TO-220] 5-7 days, 325 pcs. Brand: ST Microelectronics Technology / Family: powermesh Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 15 Pulse collector current (Icm), A: 30 Saturation voltage at rated current, V: 2.75 Maximum power dissipation, W: 65 Turn-on delay time (td (on)) at at 25 ° C, ns: 17 Turn-off delay time (td (off)) at at 25 ° C, ns: 72 Operating temperature (Tj), ° C: -55…+150 Housing: to-220	quick view	5-7 days, 325 pcs.	1 040 ֏ 600 ֏ × from 15 pcs. — 590 ֏
STGW19NC60HD, Transistor IGBT, 600V, 42A, 140W [TO-247] 5-8 days, 5 pcs. Brand: ST Microelectronics Technology / Family: powermesh Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 42 Pulse collector current (Icm), A: 60 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 140 Turn-on delay time (td (on)) at at 25 ° C, ns: 25 Turn-off delay time (td (off)) at at 25 ° C, ns: 97 Operating temperature (Tj), ° C: -55…+150 Housing: to-220	quick view	5-8 days, 5 pcs.	3 590 ֏ × from 15 pcs. — 3 410 ֏
STGW30H60DFB, Transistor IGBT 600V 60A 260W [TO-247] 5-7 days, 162 pcs. Brand: ST Microelectronics Technology / Family: Trench and Fieldstop Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 60 Pulse collector current (Icm), A: 120 Saturation voltage at rated current, V: 2 Maximum power dissipation, W: 260 Turn-on delay time (td (on)) at at 25 ° C, ns: 37 Turn-off delay time (td (off)) at at 25 ° C, ns: 146 Operating temperature (Tj), ° C: -55…+175 Housing: to-247	quick view	5-7 days, 162 pcs.	2 670 ֏ 2 020 ֏ × from 15 pcs. — 1 970 ֏
STGW30NC60WD, Transistor IGBT, 600V, 60A, 200W [TO-247] 5-7 days, 151 pcs. Brand: ST Microelectronics Technology / Family: powermesh Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 60 Pulse collector current (Icm), A: 150 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 200 Turn-on delay time (td (on)) at at 25 ° C, ns: 29.5 Turn-off delay time (td (off)) at at 25 ° C, ns: 118 Operating temperature (Tj), ° C: -55…+150 Housing: to-247	quick view	5-7 days, 151 pcs.	4 790 ֏ 2 900 ֏ × from 15 pcs. — 2 860 ֏
STGW39NC60VD, PowerMESH IGBT N-CH 600V 40A, [TO-247-3] 5-7 days, 253 pcs. Brand: ST Microelectronics Technology / Family: powermesh Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 80 Pulse collector current (Icm), A: 220 Saturation voltage at rated current, V: 2.4 Maximum power dissipation, W: 250 Turn-on delay time (td (on)) at at 25 ° C, ns: 33 Turn-off delay time (td (off)) at at 25 ° C, ns: 178 Operating temperature (Tj), ° C: -55…+150 Housing: to-247	quick view	5-7 days, 253 pcs.	2 670 ֏ 1 730 ֏ × from 15 pcs. — 1 700 ֏
STGW40V60DF, 600V 80A 283W IGBT IGBT, [TO-247] 5-7 days, 311 pcs. Brand: ST Microelectronics Technology / Family: Trench and Fieldstop Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 80 Pulse collector current (Icm), A: 160 Saturation voltage at rated current, V: 2.3 Maximum power dissipation, W: 283 Turn-on delay time (td (on)) at at 25 ° C, ns: 52 Turn-off delay time (td (off)) at at 25 ° C, ns: 208 Operating temperature (Tj), ° C: -55…+175 Housing: to-247	quick view	5-7 days, 311 pcs.	4 670 ֏ 3 210 ֏ × from 10 pcs. — 3 160 ֏
STGW60V60DF, IGBT, N-channel, 600 V, 80 A, 375 W, [TO-247] 5-7 days, 371 pcs. Brand: ST Microelectronics Technology / Family: Trench and Fieldstop Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 80 Pulse collector current (Icm), A: 240 Saturation voltage at rated current, V: 2.3 Maximum power dissipation, W: 375 Turn-on delay time (td (on)) at at 25 ° C, ns: 60 Turn-off delay time (td (off)) at at 25 ° C, ns: 208 Operating temperature (Tj), ° C: -55…+175 Housing: to-247	quick view	5-7 days, 371 pcs.	8 400 ֏ 6 000 ֏ × from 15 pcs. — 5 900 ֏
STGP14NC60KD, Transistor, IGBT, short-circuit proof, 600V, 14A [TO-220] 5-7 days, 3 pcs. Brand: ST Microelectronics Technology / Family: powermesh Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 25 Pulse collector current (Icm), A: 50 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 80 Turn-on delay time (td (on)) at at 25 ° C, ns: 22.5 Turn-off delay time (td (off)) at at 25 ° C, ns: 116 Operating temperature (Tj), ° C: -55…+150 Housing: to-220	quick view	5-7 days, 3 pcs.	950 ֏ × from 15 pcs. — 920 ֏
STGB18N40LZT4 6-9 days, 169 pcs. Brand: ST Microelectronics Housing: to263	quick view	6-9 days, 169 pcs.	740 ֏ × from 51 pcs. — 590 ֏
STGB10NC60KDT4 2-5 weeks, 1 pcs. Brand: ST Microelectronics	quick view	2-5 weeks, 1 pcs.	2 480 ֏ ×
STGB18N40LZT4 2-5 weeks, 1 pcs. Brand: ST Microelectronics	quick view	2-5 weeks, 1 pcs.	2 350 ֏ ×

Insulated Gate Bipolar Transistors ST Microelectronics

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