Bipolar transistors (BJTs)
over 1000
5-7 days, 4689 pcs.
Brand: Integral
Structure: npn
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 60
Maximum allowable current to (Ik max. A): 0.4
Static current transfer ratio h21e min: 40…200
Cutoff frequency of current transfer ratio fgr.MHz: 200
Maximum power dissipation, W: 0.5
Housing: kt-26 (to-92)
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5-7 days, 4689 pcs. |
116 ֏
×
61 ֏ from 100 pcs. — 46 ֏
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5-8 days, 48 pcs.
Brand: Integral
Structure: pnp
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 40
Maximum allowable current to (Ik max. A): 0.1
Static current transfer ratio h21e min: 30…120
Cutoff frequency of current transfer ratio fgr.MHz: 200
Maximum power dissipation, W: 0.075
Housing: kt-46 (sot-23)
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5-8 days, 48 pcs. |
146 ֏
×
100 ֏ from 100 pcs. — 84 ֏
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5-8 days, 1 pcs.
Brand: Integral
Structure: pnp
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 40
Maximum allowable current to (Ik max. A): 0.1
Static current transfer ratio h21e min: 80…250
Cutoff frequency of current transfer ratio fgr.MHz: 200
Maximum power dissipation, W: 0.075
Housing: kt-46 (sot-23)
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5-8 days, 1 pcs. |
122 ֏
×
89 ֏ from 100 pcs. — 79 ֏
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5-8 days, 438 pcs.
Brand: Integral
Structure: npn
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 20
Maximum allowable current to (Ik max. A): 0.1
Static current transfer ratio h21e min: 200…500
Cutoff frequency of current transfer ratio fgr.MHz: 150
Maximum power dissipation, W: 0.1
Housing: kt-46 (sot-23)
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5-8 days, 438 pcs. |
122 ֏
×
82 ֏ from 100 pcs. — 70 ֏
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5-7 days, 1582 pcs.
Brand: Integral
Structure: npn
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 15
Maximum allowable current to (Ik max. A): 0.1
Static current transfer ratio h21e min: 400…1000
Cutoff frequency of current transfer ratio fgr.MHz: 300
Maximum power dissipation, W: 0.1
Housing: kt-46 (sot-23)
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5-7 days, 1582 pcs. |
146 ֏
×
102 ֏ from 100 pcs. — 87 ֏
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5-7 days, 2739 pcs.
Brand: Integral
Structure: npn
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 15
Maximum allowable current to (Ik max. A): 0.1
Static current transfer ratio h21e min: 400…1000
Cutoff frequency of current transfer ratio fgr.MHz: 300
Maximum power dissipation, W: 0.1
Housing: kt-46 (sot-23)
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5-7 days, 2739 pcs. |
122 ֏
×
89 ֏ from 100 pcs. — 79 ֏
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5-7 days, 154 pcs.
Brand: Integral
Structure: npn
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 40
Maximum allowable current to (Ik max. A): 0.2
Static current transfer ratio h21e min: 40…100
Cutoff frequency of current transfer ratio fgr.MHz: 500
Maximum power dissipation, W: 0.36
Housing: kt-1-7 (to-18)
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5-7 days, 154 pcs. |
1 160 ֏
×
930 ֏ from 15 pcs. — 880 ֏
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5-7 days, 2744 pcs.
Brand: Integral
Structure: npn
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 15
Maximum allowable current to (Ik max. A): 0.03
Static current transfer ratio h21e min: 50…450
Cutoff frequency of current transfer ratio fgr.MHz: 900
Maximum power dissipation, W: 0.225
Housing: kt-26 (to-92)
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5-7 days, 2744 pcs. |
122 ֏
×
83 ֏ from 15 pcs. — 74 ֏
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5-7 days, 5 pcs.
Brand: Integral
Structure: npn
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 45
Maximum allowable current to (Ik max. A): 0.8
Static current transfer ratio h21e min: 110…220
Cutoff frequency of current transfer ratio fgr.MHz: 200
Maximum power dissipation, W: 0.5
Housing: kt-26 (to-92)
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5-7 days, 5 pcs. |
116 ֏
×
61 ֏ from 100 pcs. — 46 ֏
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5-7 days, 505 pcs.
Brand: Integral
Structure: npn
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 100
Maximum allowable current to (Ik max. A): 8
Static current transfer ratio h21e min: 1000
Cutoff frequency of current transfer ratio fgr.MHz: 4
Maximum power dissipation, W: 65
Housing: kt-28-2 (to-220)
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5-7 days, 505 pcs. |
910 ֏
×
620 ֏ from 15 pcs. — 540 ֏
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5-7 days, 113 pcs.
Brand: Integral
Structure: npn
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 250
Maximum allowable current to (Ik max. A): 0.1
Static current transfer ratio h21e min: 25
Cutoff frequency of current transfer ratio fgr.MHz: 90
Maximum power dissipation, W: 10
Housing: kt-27-2 (to-126)
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5-7 days, 113 pcs. |
219 ֏
×
133 ֏ from 50 pcs. — 116 ֏
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5-7 days, 10129 pcs.
Brand: Integral
Structure: npn darlington
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 60
Maximum allowable current to (Ik max. A): 4
Static current transfer ratio h21e min: 750
Cutoff frequency of current transfer ratio fgr.MHz: 200
Maximum power dissipation, W: 8
Housing: kt-27-2 (to-126)
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5-7 days, 10129 pcs. |
182 ֏
×
135 ֏ from 15 pcs. — 126 ֏
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5-7 days, 2922 pcs.
Brand: Integral
Structure: npn darlington
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 45
Maximum allowable current to (Ik max. A): 4
Static current transfer ratio h21e min: 750
Cutoff frequency of current transfer ratio fgr.MHz: 200
Maximum power dissipation, W: 8
Housing: kt-27-2 (to-126)
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5-7 days, 2922 pcs. |
182 ֏
×
130 ֏ from 15 pcs. — 121 ֏
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5-7 days, 402 pcs.
Brand: Integral
Structure: pnp darlington
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 60
Maximum allowable current to (Ik max. A): 4
Static current transfer ratio h21e min: 750
Cutoff frequency of current transfer ratio fgr.MHz: 200
Maximum power dissipation, W: 8
Housing: kt-27-2 (to-126)
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5-7 days, 402 pcs. |
275 ֏
×
from 15 pcs. — 237 ֏
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5-7 days, 733 pcs.
Brand: Integral
Structure: pnp darlington
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 45
Maximum allowable current to (Ik max. A): 4
Static current transfer ratio h21e min: 750
Cutoff frequency of current transfer ratio fgr.MHz: 200
Maximum power dissipation, W: 8
Housing: kt-27-2 (to-126)
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5-7 days, 733 pcs. |
182 ֏
×
130 ֏ from 15 pcs. — 121 ֏
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Brand: ON Semiconductor
Structure: npn
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 140
Maximum allowable current to (Ik max. A): 16
Static current transfer ratio h21e min: 15
Cutoff frequency of current transfer ratio fgr.MHz: 4
Maximum power dissipation, W: 150
Housing: to-3
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6 500 ֏
×
5 200 ֏ from 10 pcs. — 4 730 ֏
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5-7 days, 14941 pcs.
Brand: Diotec
Structure: npn
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 40
Maximum allowable current to (Ik max. A): 0.2
Static current transfer ratio h21e min: 60
Cutoff frequency of current transfer ratio fgr.MHz: 300
Maximum power dissipation, W: 0.625
Housing: to-92
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5-7 days, 14941 pcs. |
31 ֏
×
20 ֏ from 100 pcs. — 16 ֏
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Brand: ON Semiconductor
Structure: pnp
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 40
Maximum allowable current to (Ik max. A): 0.2
Static current transfer ratio h21e min: 100
Cutoff frequency of current transfer ratio fgr.MHz: 200
Maximum power dissipation, W: 0.625
Housing: to-92
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31 ֏
×
20 ֏ from 100 pcs. — 16 ֏
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Brand: ON Semiconductor
Structure: npn
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 40
Maximum allowable current to (Ik max. A): 1
Static current transfer ratio h21e min: 100
Cutoff frequency of current transfer ratio fgr.MHz: 250
Maximum power dissipation, W: 0.625
Housing: to-92
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79 ֏
×
56 ֏ from 100 pcs. — 48 ֏
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Brand: ON Semiconductor
Structure: pnp
Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 40
Maximum allowable current to (Ik max. A): 1
Static current transfer ratio h21e min: 100
Cutoff frequency of current transfer ratio fgr.MHz: 200
Maximum power dissipation, W: 0.35
Housing: to-92
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31 ֏
×
20 ֏ from 100 pcs. — 16 ֏
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Bipolar transistors are three-electrode semiconductor devices, in which the electrodes are connected to sequentially arranged layers of semiconductors with alternating impurity conduction.
Depending on the alternation method, there are pnp and npn bipolar transistors.
Unlike field-effect transistors, the operation of bipolar transistors is based on the transfer of electric charge of two types, the carriers of which are holes and electrons.
The electrodes connected to the middle layer are called the base, and the electrodes connected to the outer layers are called the collector and emitter (these layers differ in the degree of doping with impurities).
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Products from the group «Bipolar transistors (BJTs)» you can buy wholesale and retail.