Schottky diodes

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Yerevan
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1PS76SB10,115, Schottky diode 30V 0.2A [SOD-323]
1914 pcs.
Brand: Nexperia
Series: 1PS7
Device Type: Schottky diode
Semiconductor material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum reverse voltage (V): 30
Maximum (average) forward current per diode, (A): 0.2
Maximum forward voltage, V: 0.8
Reverse leakage current, µA: 2
Capacity, pF: 10
Operating temperature,°C: -40…+125
Frame: SOD-323/SC-76
quick view
1914 pcs.
97 ֏
55 ֏
×
from 100 pcs. — 48 ֏
B240A-E3 / 61T, Schottky Diode 2A 40V [SMA]
1325 pcs.
Brand: Vishay
Series: B2xx
Device Type: Schottky diode
Semiconductor material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum reverse voltage (V): 40
Maximum (average) forward current per diode, (A): 2
Maximum forward voltage, V: 0.55
Reverse leakage current, µA: 500
Operating temperature,°C: -65…+150
Frame: DO-214AC/SMA
quick view
1325 pcs.
194 ֏
115 ֏
×
from 100 pcs. — 101 ֏
B340A-E3 / 61T, Schottky Diode 3A 40V [SMA]
2114 pcs.
Brand: Vishay
Series: B3xx
Device Type: Schottky diode
Semiconductor material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum reverse voltage (V): 40
Maximum (average) forward current per diode, (A): 3
Maximum forward voltage, V: 0.55
Reverse leakage current, µA: 500
Operating temperature,°C: -65…+150
Frame: DO-214AC/SMA
quick view
2114 pcs.
170 ֏
68 ֏
×
from 100 pcs. — 62 ֏
BAT41, Schottky Diode 100V 100mA [DO-35.]
2144 pcs.
Brand: ST Microelectronics
Series: BAT41
Device Type: Schottky diode
Semiconductor material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum reverse voltage (V): 100
Maximum (average) forward current per diode, (A): 0.1
Maximum forward voltage, V: 0.45
Reverse leakage current, µA: 0.1
Capacity, pF: 2
Operating temperature,°C: -65…+125
Frame: DO-204AH/DO-35
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2144 pcs.
35 ֏ ×
from 500 pcs. — 31 ֏
BAT46JFILM, Schottky diode 100V 0.15A [SOD-323]
5261 pcs.
Brand: ST Microelectronics
Series: BAT46
Device Type: Schottky diode
Semiconductor material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum reverse voltage (V): 100
Maximum (average) forward current per diode, (A): 0.15
Maximum forward voltage, V: 0.45
Reverse leakage current, µA: 5
Capacity, pF: 10
Operating temperature,°C: -40…+150
Frame: SOD-323/SC-76
quick view
5261 pcs.
182 ֏
115 ֏
×
from 100 pcs. — 105 ֏
BAT54A, 215, 2 Schottky diodes 0.2A 30V [SOT-23]
337 pcs.
Brand: Nexperia
Series: BAT54
Device Type: Schottky diode assembly
Semiconductor material: silicon
Number of diodes in the case: 2
Diode configuration: 1-pair, common anode
Maximum reverse voltage (V): 30
Maximum (average) forward current per diode, (A): 0.2
Maximum forward voltage, V: 0.8
Reverse leakage current, µA: 2
Operating temperature,°C: -40…+150
Frame: SOT-23-3/TO- 236AB/SC-59
quick view
337 pcs.
73 ֏
22 ֏
×
from 100 pcs. — 18 ֏
BAT54C, Schottky Diode, 2 Diodes, Common Cathode, 30V, 0.2A [SOT-23]
19145 pcs.
Brand: Diotec
Series: BAT54
Device Type: Schottky diode assembly
Semiconductor material: silicon
Number of diodes in the case: 2
Diode configuration: 1-pair, common cathode
Maximum reverse voltage (V): 30
Maximum (average) forward current per diode, (A): 0.2
Maximum forward voltage, V: 0.8
Reverse leakage current, µA: 2
Operating temperature,°C: -40…+125
Frame: SOT-23-3/TO- 236AB/SC-59
quick view
19145 pcs.
73 ֏
25 ֏
×
from 100 pcs. — 22 ֏
BAT54C, 215, Schottky Diode, 2 Diodes, Common Cathode, 30V, 0.2A [SOT-23]
12964 pcs.
Brand: Nexperia
Series: BAT54
Device Type: Schottky diode assembly
Semiconductor material: silicon
Number of diodes in the case: 2
Diode configuration: 1-pair, common cathode
Maximum reverse voltage (V): 30
Maximum (average) forward current per diode, (A): 0.2
Maximum forward voltage, V: 0.8
Reverse leakage current, µA: 2
Operating temperature,°C: -40…+150
Frame: SOT-23-3/TO- 236AB/SC-59
quick view
12964 pcs.
73 ֏
22 ֏
×
from 100 pcs. — 18 ֏
BAT54S,215, 2 Schottky diodes 0.2A 30V [SOT-23-3]
23319 pcs.
Brand: Nexperia
Series: BAT54
Device Type: Schottky diode assembly
Semiconductor material: silicon
Number of diodes in the case: 2
Diode configuration: 1-pair, serial connection
Maximum reverse voltage (V): 30
Maximum (average) forward current per diode, (A): 0.2
Maximum forward voltage, V: 0.8
Reverse leakage current, µA: 2
Operating temperature,°C: -40…+150
Frame: SOT-23-3/TO- 236AB/SC-59
quick view
23319 pcs.
24 ֏ ×
from 100 pcs. — 20 ֏
BAT54S-E3-08, Schottky Diode 30V 200mA [SOT-23] (BAT54S-V-GS08)
4844 pcs.
Brand: Vishay
Series: BAT54
Device Type: Schottky diode assembly
Semiconductor material: silicon
Number of diodes in the case: 2
Diode configuration: 1-pair, serial connection
Maximum reverse voltage (V): 30
Maximum (average) forward current per diode, (A): 0.2
Maximum forward voltage, V: 0.8
Reverse leakage current, µA: 2
Operating temperature,°C: -40…+125
Frame: SOT-23-3/TO- 236AB/SC-59
quick view
4844 pcs.
73 ֏
47 ֏
×
from 100 pcs. — 40 ֏
BAT60AE6327HTSA1, Schottky Diode 3A 10V [SOD-323]
4071 pcs.
Brand: Infineon
Series: BAT60
Device Type: Schottky diode
Semiconductor material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum reverse voltage (V): 10
Maximum (average) forward current per diode, (A): 3
Maximum forward voltage, V: 0.37
Reverse leakage current, µA: 2600
Capacity, pF: 35
Operating temperature,°C: -40…+150
Frame: SOD-323/SC-76
quick view
4071 pcs.
67 ֏ ×
from 100 pcs. — 61 ֏
BAT60JFILM, Schottky Diode 3A, 10V [SOD-323]
5813 pcs.
Brand: ST Microelectronics
Series: BAT60
Device Type: Schottky diode
Semiconductor material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum reverse voltage (V): 10
Maximum (average) forward current per diode, (A): 3
Maximum forward voltage, V: 0.58
Reverse leakage current, µA: 6
Operating temperature,°C: -40…+150
Frame: SOD-323/SC-76
quick view
5813 pcs.
104 ֏
43 ֏
×
from 100 pcs. — 31 ֏
BYS10-45-E3 / TR, Schottky Diode 1A 45V [SMA / DO-214AC]
4581 pcs.
Brand: Vishay
Series: BYS10
Device Type: Schottky diode
Semiconductor material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum reverse voltage (V): 45
Maximum (average) forward current per diode, (A): 1.5
Maximum forward voltage, V: 0.5
Reverse leakage current, µA: 500
Operating temperature,°C: -65…+150
Frame: DO-214AC/SMA
quick view
4581 pcs.
194 ֏
106 ֏
×
from 100 pcs. — 99 ֏
MBR0520LT1G, Schottky diode 0.5A 20V [SOD-123]
4293 pcs.
Brand: ON Semiconductor
Series: MBR05xx
Device Type: Schottky diode
Semiconductor material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum reverse voltage (V): 20
Maximum (average) forward current per diode, (A): 0.5
Maximum forward voltage, V: 0.385
Reverse leakage current, µA: 250
Operating temperature,°C: -65…+125
Frame: SOD-123
quick view
4293 pcs.
146 ֏
75 ֏
×
from 100 pcs. — 72 ֏
MBR0520-TP, Schottky Diode, 20V, 0.5A [SOD-123]
3025 pcs.
Brand: MCC
Series: MBR05xx
Device Type: Schottky diode
Semiconductor material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum reverse voltage (V): 20
Maximum (average) forward current per diode, (A): 0.5
Maximum forward voltage, V: 0.45
Reverse leakage current, µA: 250
Capacity, pF: 30
Operating temperature,°C: -65…+125
Frame: SOD-123
quick view
3025 pcs.
73 ֏
25 ֏
×
from 100 pcs. — 22 ֏
MBR0530T1G, Schottky diode 0.5A 30V [SOD-123]
1125 pcs.
Brand: ON Semiconductor
Series: MBR05xx
Device Type: Schottky diode
Semiconductor material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum reverse voltage (V): 30
Maximum (average) forward current per diode, (A): 0.5
Maximum forward voltage, V: 0.43
Reverse leakage current, µA: 130
Operating temperature,°C: -65…+125
Frame: SOD-123
quick view
1125 pcs.
104 ֏
34 ֏
×
from 100 pcs. — 28 ֏
MBR0540T1G, Schottky diode 0.5A 40V [SOD-123]
1702 pcs.
Brand: ON Semiconductor
Series: MBR05xx
Device Type: Schottky diode
Semiconductor material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum reverse voltage (V): 40
Maximum (average) forward current per diode, (A): 0.5
Maximum forward voltage, V: 0.51
Reverse leakage current, µA: 20
Operating temperature,°C: -55…+150
Frame: SOD-123
quick view
1702 pcs.
255 ֏
103 ֏
×
from 100 pcs. — 85 ֏
MBR10100G, Schottky Diode 10A 100V [TO-220AC]
78 pcs.
Brand: ON Semiconductor
Series: MBR10xx
Device Type: Schottky diode
Semiconductor material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum reverse voltage (V): 100
Maximum (average) forward current per diode, (A): 10
Maximum forward voltage, V: 0.8
Reverse leakage current, µA: 100
Operating temperature,°C: -65…+175 C
Frame: TO-220-2/TO-220AC(2 Leads)
quick view
78 pcs.
910 ֏
510 ֏
×
from 15 pcs. — 489 ֏
MBRB20100CTG, Schottky Diode Assembly, 2 Diodes, Common Cathode, 100V, 10A [D2-PAK]
789 pcs.
Brand: ON Semiconductor
Series: MBRB20xx
Device Type: Schottky diode assembly
Semiconductor material: silicon
Number of diodes in the case: 2
Diode configuration: 1-pair, common cathode
Maximum reverse voltage (V): 100
Maximum (average) forward current per diode, (A): 10
Maximum forward voltage, V: 0.85
Reverse leakage current, µA: 100
Operating temperature,°C: -65…+175 C
Frame: D2PAK/TO-263AB(2 Leads+Tab)
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789 pcs.
540 ֏ ×
from 15 pcs. — 510 ֏
MBRS540T3G, Schottky Diode 40V 5A [SMC / DO-214AB]
2812 pcs.
Brand: ON Semiconductor
Series: MBRS5xx
Device Type: Schottky diode
Semiconductor material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum reverse voltage (V): 40
Maximum (average) forward current per diode, (A): 5
Maximum forward voltage, V: 0.5
Reverse leakage current, µA: 300
Operating temperature,°C: -65…+150
Frame: DO-214AB/SMC
quick view
2812 pcs.
730 ֏
354 ֏
×
from 100 pcs. — 314 ֏
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Schottky diodes are semiconductor devices that have a low voltage drop when turned on directly.

In such diodes, the barrier is the junction between the metal and the semiconductor. Such a transition has a number of special properties: reduced forward voltage drop, high leakage currents, very small reverse recovery electric charges. This is due to the fact that Schottky diodes do not have diffusion, which is associated with the injection of minority charge carriers, that is, their operation is based only on major carriers, and the speed of such diodes depends on the barrier capacitance.

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