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4484 pcs.
Brand: ST Microelectronics
Diode type: Schottky (Single)
Maximum reverse voltage (V): 70 V
Maximum forward current per diode, If: 15 mA
Capacity @ Vr, F: 2 pF @ 0V, 1MHz
Power dissipation: 430 mW
Operating temperature: -65…+200 C (TJ)
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4484 pcs. |
41 ֏ × |
from 100 pcs. — 38 ֏
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3506 pcs.
Brand: Infineon
Diode type: PIN (Single)
Maximum reverse voltage (V): 50 V
Maximum forward current per diode, If: 100 mA
Capacity @ Vr, F: 0.3 pF @ 5V, 1MHz
Power dissipation: 250 mW
Operating temperature: +150 C (Max) (TJ)
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3506 pcs. |
104 ֏
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56 ֏ |
from 100 pcs. — 48 ֏
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8 days, 1511 pcs.
Brand: NXP
Diode type: PIN (Single)
Maximum reverse voltage (V): 50 V
Maximum forward current per diode, If: 50 mA
Capacity @ Vr, F: 0.35pF at 5V, 1MHz
Power dissipation: 500 MW
Operating temperature: -65…+150 C (TJ)
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8 days, 1511 pcs. |
79 ֏
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37 ֏ |
from 100 pcs. — 31 ֏
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8 days, 3793 pcs.
Brand: NXP
Diode type: PIN (Single)
Maximum reverse voltage (V): 175V
Maximum forward current per diode, If: 100 mA
Capacity @ Vr, F: 0.35 pF @ 20V, 1MHz
Power dissipation: 715 mW
Operating temperature: -65…+150 C (TJ)
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8 days, 3793 pcs. |
170 ֏
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130 ֏ |
from 100 pcs. — 122 ֏
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8 days, 687 pcs.
Brand: Infineon
Diode type: Schottky (2-independent)
Maximum reverse voltage (V): 4V
Maximum forward current per diode, If: 110 mA
Capacity @ Vr, F: 0.35 pF @ 0V, 1MHz
Power dissipation: 100 MW
Operating temperature: +150 C (Max) (TJ)
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8 days, 687 pcs. |
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8 days, 5 pcs. |
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9 days, 299 pcs.
Brand: Infineon
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9 days, 299 pcs. |
231 ֏ × |
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9 days, 19 pcs.
Brand: Infineon
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9 days, 19 pcs. |
231 ֏ × |
from 10 pcs. — 206 ֏
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9 days, 27 pcs. |
640 ֏ × |
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2-3 weeks, 9800 pcs. |
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3 weeks, 1548 pcs. |
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3 weeks, 721 pcs. |
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3 weeks, 8 pcs. |
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3 weeks, 881 pcs. |
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3 weeks, 3858 pcs. |
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3 weeks, 1597 pcs. |
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3 weeks, 1295 pcs. |
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from 2 pcs. — 1 430 ֏
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3 weeks, 235 pcs. |
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3 weeks, 229 pcs. |
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3 weeks, 5859 pcs. |
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Microwave diodes are semiconductor devices designed to operate in the ultra-high frequency range.
There are diodes with a pin structure, which between doped regions with high conductivity n and p contain an active i-region, which has low conductivity and a longer lifetime of electric charge carriers. Due to this structure, the capacity of the transition is reduced and the frequency of the element is increased.
Tunnel diodes are semiconductor devices designed to amplify the power signal in the electronic circuits of amplifiers, generators and microwave switches.
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