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Pulse diodes

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1N4148, Pulse diode 100V 0.15A [DO-35.] (= CD522A) 68591 pcs. Brand: Diotec Material: Silicon Number of diodes in the case: 1 Diode configuration: Single Maximum constant reverse voltage, V: 75 Maximum pulse reverse voltage, V: 100 Maximum forward (rectified for half-cycle) current, A: 0.15 Maximum permissible direct impulse current, A: 0.5 Maximum reverse current, uA 25g: 5 Maximum forward voltage, V: 1 at Ipr., A: 0.01 Maximum reverse recovery time, ns: 4 Total capacitance SD, pF: 4 Working temperature, C: -50…+175 Mounting method: in hole Housing: DO-35	quick view	68591 pcs.	8 ֏ ×
1N4148-TAP, Diode 100V 150mA [DO-35] 19882 pcs. Brand: Vishay Material: Silicon Number of diodes in the case: 1 Diode configuration: Single Maximum constant reverse voltage, V: 75 Maximum pulse reverse voltage, V: 100 Maximum forward (rectified for half-cycle) current, A: 0.15 Maximum permissible direct impulse current, A: 0.5 Maximum reverse current, uA 25g: 5 Maximum forward voltage, V: 1 at Ipr., A: 0.01 Maximum reverse recovery time, ns: 4 Total capacitance SD, pF: 4 Working temperature, C: -65…+150 Mounting method: in hole Housing: DO-35	quick view	19882 pcs.	25 ֏ 17 ֏ ×	from 100 pcs. — 15 ֏
1N4148TR, Diode 150mA 100V [DO-35] 9377 pcs. Brand: ON Semiconductor Material: Silicon Number of diodes in the case: 1 Diode configuration: Single Maximum constant reverse voltage, V: 75 Maximum pulse reverse voltage, V: 100 Maximum forward (rectified for half-cycle) current, A: 0.2 Maximum permissible direct impulse current, A: 0.4 Maximum reverse current, uA 25g: 5 Maximum forward voltage, V: 1 at Ipr., A: 0.01 Maximum reverse recovery time, ns: 4 Total capacitance SD, pF: 4 Working temperature, C: -55…+175 Mounting method: in hole Housing: DO-35	quick view	9377 pcs.	13 ֏ 11 ֏ ×	from 100 pcs. — 9 ֏
1N4148W, Pulse diode 100V 0.15A [SOD-123F.] 19259 pcs. Brand: Diotec Material: Silicon Number of diodes in the case: 1 Diode configuration: Single Maximum constant reverse voltage, V: 75 Maximum pulse reverse voltage, V: 100 Maximum forward (rectified for half-cycle) current, A: 0.15 Maximum permissible direct impulse current, A: 0.3 Maximum reverse current, uA 25g: 1 Maximum forward voltage, V: 1.25 at Ipr., A: 0.15 Maximum reverse recovery time, ns: 4 Total capacitance SD, pF: 2 Working temperature, C: -55…+150 Mounting method: smd Housing: SOD-123F	quick view	19259 pcs.	16 ֏ ×	from 100 pcs. — 14 ֏
1N4148WS, Pulse diode 0.15A 100V [SOD-323F.] 4925 pcs. Brand: Diotec Material: Silicon Number of diodes in the case: 1 Diode configuration: Single Maximum constant reverse voltage, V: 75 Maximum pulse reverse voltage, V: 100 Maximum forward (rectified for half-cycle) current, A: 0.15 Maximum permissible direct impulse current, A: 0.3 Maximum reverse current, uA 25g: 1 Maximum forward voltage, V: 1.25 at Ipr., A: 0.15 Maximum reverse recovery time, ns: 4 Total capacitance SD, pF: 2 Working temperature, C: -55…+150 Mounting method: smd Housing: SOD-323F	quick view	4925 pcs.	18 ֏ ×	from 100 pcs. — 15 ֏
1N4148WS, Pulse diode 0.15A 75V [SOD-323F.] 6726 pcs. Brand: ON Semiconductor Material: Silicon Number of diodes in the case: 1 Diode configuration: Single Maximum constant reverse voltage, V: 75 Maximum pulse reverse voltage, V: 100 Maximum forward (rectified for half-cycle) current, A: 0.15 Maximum permissible direct impulse current, A: 0.3 Maximum reverse current, uA 25g: 5 Maximum forward voltage, V: 1 at Ipr., A: 0.01 Maximum reverse recovery time, ns: 4 Total capacitance SD, pF: 4 Working temperature, C: -55…+150 Mounting method: smd Housing: SOD-323F	quick view	6726 pcs.	55 ֏ 22 ֏ ×	from 100 pcs. — 20 ֏
1N4448, Diode 150mA 100V [DO-35] (= KD510A) 5116 pcs. Brand: Diotec Material: Silicon Number of diodes in the case: 1 Diode configuration: Single Maximum constant reverse voltage, V: 75 Maximum pulse reverse voltage, V: 100 Maximum forward (rectified for half-cycle) current, A: 0.2 Maximum permissible direct impulse current, A: 0.5 Maximum reverse current, uA 25g: 5 Maximum forward voltage, V: 1 at Ipr., A: 0.1 Maximum reverse recovery time, ns: 4 Total capacitance SD, pF: 4 Working temperature, C: -50…+175 Mounting method: in hole Housing: DO-35	quick view	5116 pcs.	19 ֏ 12 ֏ ×	from 100 pcs. — 10 ֏
1N914, Pulse diode 0.2/1A 75V [DO-35 / DO-204AH.] 1784 pcs. Brand: ON Semiconductor Material: Silicon Number of diodes in the case: 1 Diode configuration: Single Maximum constant reverse voltage, V: 75 Maximum pulse reverse voltage, V: 100 Maximum forward (rectified for half-cycle) current, A: 0.2 Maximum permissible direct impulse current, A: 0.4 Maximum reverse current, uA 25g: 5 Maximum forward voltage, V: 1 at Ipr., A: 0.01 Maximum reverse recovery time, ns: 4 Total capacitance SD, pF: 4 Working temperature, C: -55…+175 Mounting method: in hole Housing: DO-35	quick view	1784 pcs.	7 ֏ ×
BAS16,215, Pulse diode, 0.215A, 100V [SOT-23-3.] 20807 pcs. Brand: Nexperia Material: Silicon Number of diodes in the case: 1 Diode configuration: Single Maximum constant reverse voltage, V: 100 Maximum pulse reverse voltage, V: 100 Maximum forward (rectified for half-cycle) current, A: 0.215 Maximum permissible direct impulse current, A: 0.5 Maximum reverse current, uA 25g: 0.5 Maximum forward voltage, V: 1.25 at Ipr., A: 0.15 Maximum reverse recovery time, ns: 4 Total capacitance SD, pF: 1.5 Working temperature, C: -65…+150 Mounting method: smd Housing: SOT-23-3	quick view	20807 pcs.	7 ֏ ×
BAS28,215, Pulse diode, 2 x 0.215A, 75V, independent [SOT-143.] 989 pcs. Brand: Nexperia Material: Silicon Number of diodes in the case: 2 Diode configuration: Independent, 2-diode Maximum constant reverse voltage, V: 75 Maximum pulse reverse voltage, V: 85 Maximum forward (rectified for half-cycle) current, A: 0.215 Maximum permissible direct impulse current, A: 0.5 Maximum reverse current, uA 25g: 1 Maximum forward voltage, V: 1.25 at Ipr., A: 0.15 Maximum reverse recovery time, ns: 4 Total capacitance SD, pF: 1.5 Working temperature, C: -65…+150 Mounting method: smd Housing: SOT-143B	quick view	989 pcs.	550 ֏ ×	from 100 pcs. — 483 ֏
BAS316,115, Pulse diode, 0.25A, 100V [SOD-323.] 7616 pcs. Brand: Nexperia Material: Silicon Number of diodes in the case: 1 Diode configuration: Single Maximum constant reverse voltage, V: 100 Maximum pulse reverse voltage, V: 100 Maximum forward (rectified for half-cycle) current, A: 0.25 Maximum permissible direct impulse current, A: 0.5 Maximum reverse current, uA 25g: 0.5 Maximum forward voltage, V: 1.25 at Ipr., A: 0.15 Maximum reverse recovery time, ns: 4 Total capacitance SD, pF: 1.5 Working temperature, C: -65…+150 Mounting method: smd Housing: SOD-323	quick view	7616 pcs.	15 ֏ ×	from 100 pcs. — 10 ֏
BAS32L, 115, Diode High-speed 75V 200mA [SOD-80C] 6913 pcs. Brand: Nexperia Material: Silicon Number of diodes in the case: 1 Diode configuration: Single Maximum constant reverse voltage, V: 75 Maximum forward (rectified for half-cycle) current, A: 0.2 Maximum permissible direct impulse current, A: 0.45 Maximum reverse current, uA 25g: 5 Maximum forward voltage, V: 1 at Ipr., A: 0.1 Maximum reverse recovery time, ns: 4 Total capacitance SD, pF: 2 Working temperature, C: -65…+200 Mounting method: smd Housing: SOD-80/MiniMELF	quick view	6913 pcs.	73 ֏ 36 ֏ ×	from 100 pcs. — 34 ֏
BAV70,215, Pulse diode, 2 x 0.215A, 100V, common cathode [SOT-23-3.] 8079 pcs. Brand: Nexperia Material: Silicon Number of diodes in the case: 2 Diode configuration: Common cathode, 1-pair Maximum constant reverse voltage, V: 100 Maximum pulse reverse voltage, V: 100 Maximum forward (rectified for half-cycle) current, A: 0.215 Maximum permissible direct impulse current, A: 0.45 Maximum reverse current, uA 25g: 0.5 Maximum forward voltage, V: 1.25 at Ipr., A: 0.15 Maximum reverse recovery time, ns: 4 Total capacitance SD, pF: 1.5 Working temperature, C: -65…+150 Mounting method: smd Housing: SOT-23-3	quick view	8079 pcs.	5 ֏ ×
BAV99,215, Pulse diode, 2 x 0.125A, 100V, sequential switching [SOT-23-3.] 20758 pcs. Brand: Nexperia Material: Silicon Number of diodes in the case: 2 Diode configuration: Serial connection, 1-pair Maximum constant reverse voltage, V: 100 Maximum pulse reverse voltage, V: 100 Maximum forward (rectified for half-cycle) current, A: 0.215 Maximum permissible direct impulse current, A: 0.5 Maximum reverse current, uA 25g: 0.5 Maximum forward voltage, V: 1.25 at Ipr., A: 0.15 Maximum reverse recovery time, ns: 4 Total capacitance SD, pF: 1.5 Working temperature, C: -65…+150 Mounting method: smd Housing: SOT-23-3	quick view	20758 pcs.	7 ֏ ×	from 600 pcs. — 6 ֏
BAV99-7-F, Pulse diode, 2 x 0.3A, 75V, serial switching [SOT-23-3.] 6892 pcs. Brand: Diodes Material: Silicon Number of diodes in the case: 2 Diode configuration: Serial connection, 1-pair Maximum constant reverse voltage, V: 100 Maximum forward (rectified for half-cycle) current, A: 0.215 Maximum permissible direct impulse current, A: 0.5 Maximum reverse current, uA 25g: 1 Maximum forward voltage, V: 1.25 at Ipr., A: 0.15 Maximum reverse recovery time, ns: 6 Total capacitance SD, pF: 1.5 Working temperature, C: -65…+150 Mounting method: smd Housing: SOT-23-3	quick view	6892 pcs.	18 ֏ ×	from 100 pcs. — 16 ֏
BAV99LT1G, Pulse diode, 2 x 0.215A, 100V, sequential switching [SOT-23-3.] 4923 pcs. Brand: ON Semiconductor Material: Silicon Number of diodes in the case: 2 Diode configuration: Serial connection, 1-pair Maximum constant reverse voltage, V: 100 Maximum forward (rectified for half-cycle) current, A: 0.215 Maximum permissible direct impulse current, A: 0.5 Maximum reverse current, uA 25g: 1 Maximum forward voltage, V: 1.25 at Ipr., A: 0.15 Maximum reverse recovery time, ns: 6 Total capacitance SD, pF: 1.5 Working temperature, C: -65…+150 Mounting method: smd Housing: SOT-23-3	quick view	4923 pcs.	12 ֏ ×	from 200 pcs. — 11 ֏
BAV99-TP, Pulse diode, 2 x 0.2A, 70V, serial switching [SOT-23-3.] 23674 pcs. Brand: MCC Material: Silicon Number of diodes in the case: 2 Diode configuration: Serial connection, 1-pair Maximum constant reverse voltage, V: 70 Maximum forward (rectified for half-cycle) current, A: 0.2 Maximum reverse current, uA 25g: 50 Maximum forward voltage, V: 1.25 at Ipr., A: 0.15 Maximum reverse recovery time, ns: 6 Total capacitance SD, pF: 2 Working temperature, C: -55…+150 Mounting method: smd Housing: SOT-23-3	quick view	23674 pcs.	13 ֏ ×	from 150 pcs. — 11 ֏
BAV99W,115, Pulse diode, 2 x 0.15A, 100V, serial switching [SOT-323.] 3356 pcs. Brand: Nexperia Material: Silicon Number of diodes in the case: 2 Diode configuration: Serial connection, 1-pair Maximum constant reverse voltage, V: 100 Maximum pulse reverse voltage, V: 100 Maximum forward (rectified for half-cycle) current, A: 0.15 Maximum permissible direct impulse current, A: 0.5 Maximum forward voltage, V: 1.25 at Ipr., A: 0.15 Maximum reverse recovery time, ns: 4 Total capacitance SD, pF: 1.5 Working temperature, C: -65…+150 Mounting method: smd Housing: SOD-323	quick view	3356 pcs.	13 ֏ ×	from 200 pcs. — 12 ֏
BAW56,215, 2 diodes 0.2A 70V, common anode [SOT-23] 2183 pcs. Brand: Nexperia Material: Silicon Number of diodes in the case: 2 Diode configuration: Common anode, 1-pair Maximum constant reverse voltage, V: 90 Maximum pulse reverse voltage, V: 90 Maximum forward (rectified for half-cycle) current, A: 0.215 Maximum permissible direct impulse current, A: 0.5 Maximum reverse current, uA 25g: 0.5 Maximum forward voltage, V: 1.25 at Ipr., A: 0.15 Maximum reverse recovery time, ns: 4 Total capacitance SD, pF: 2 Working temperature, C: -65…+150 Mounting method: smd Housing: SOT-23-3	quick view	2183 pcs.	49 ֏ 14 ֏ ×	from 100 pcs. — 12 ֏
FDLL4148, Pulse diode 1A 100V [LL-34] 2104 pcs. Brand: ON Semiconductor Material: Silicon Number of diodes in the case: 1 Diode configuration: Single Maximum constant reverse voltage, V: 75 Maximum pulse reverse voltage, V: 100 Maximum forward (rectified for half-cycle) current, A: 0.2 Maximum permissible direct impulse current, A: 0.4 Maximum reverse current, uA 25g: 5 Maximum forward voltage, V: 1 at Ipr., A: 0.01 Maximum reverse recovery time, ns: 4 Total capacitance SD, pF: 2 Working temperature, C: -55…+175 Mounting method: smd Housing: SOD-80/MiniMELF	quick view	2104 pcs.	13 ֏ ×	from 100 pcs. — 11 ֏

Pulse diodes are semiconductor radio components designed for high-frequency pulse circuits.

They are pn-junction semiconductor diodes optimized for capacitance and reverse resistance recovery time (minority carrier dissipation). To do this, the pn-junction area is reduced, and heavily doped materials are used in the manufacture (silicon is alloyed with gold), due to which pulsed diodes have low limiting pulse currents (hundreds of mA) and a small limiting reverse voltage (tens of volts).

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