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90400 pcs.
Brand: Diotec
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.15
Maximum permissible direct impulse current, A: 0.5
Maximum reverse current, uA 25g: 5
Maximum forward voltage, V: 1
at Ipr., A: 0.01
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 4
Working temperature, C: -50…+175
Mounting method: in hole
Housing: DO-35
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90400 pcs. |
9 ֏ × |
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24975 pcs.
Brand: Vishay
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.15
Maximum permissible direct impulse current, A: 0.5
Maximum reverse current, uA 25g: 5
Maximum forward voltage, V: 1
at Ipr., A: 0.01
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 4
Working temperature, C: -65…+150
Mounting method: in hole
Housing: DO-35
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24975 pcs. |
25 ֏
×
19 ֏ |
from 100 pcs. — 17 ֏
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10065 pcs.
Brand: ON Semiconductor
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.2
Maximum permissible direct impulse current, A: 0.4
Maximum reverse current, uA 25g: 5
Maximum forward voltage, V: 1
at Ipr., A: 0.01
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 4
Working temperature, C: -55…+175
Mounting method: in hole
Housing: DO-35
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10065 pcs. |
13 ֏ × |
from 100 pcs. — 11 ֏
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9563 pcs.
Brand: Diotec
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.15
Maximum permissible direct impulse current, A: 0.3
Maximum reverse current, uA 25g: 1
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 2
Working temperature, C: -55…+150
Mounting method: smd
Housing: SOD-123F
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9563 pcs. |
18 ֏ × |
from 100 pcs. — 15 ֏
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8057 pcs.
Brand: Diotec
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.15
Maximum permissible direct impulse current, A: 0.3
Maximum reverse current, uA 25g: 1
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 2
Working temperature, C: -55…+150
Mounting method: smd
Housing: SOD-323F
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8057 pcs. |
15 ֏ × |
from 100 pcs. — 13 ֏
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4944 pcs.
Brand: ON Semiconductor
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.15
Maximum permissible direct impulse current, A: 0.3
Maximum reverse current, uA 25g: 5
Maximum forward voltage, V: 1
at Ipr., A: 0.01
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 4
Working temperature, C: -55…+150
Mounting method: smd
Housing: SOD-323F
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4944 pcs. |
55 ֏
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25 ֏ |
from 100 pcs. — 22 ֏
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3906 pcs.
Brand: Diotec
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.2
Maximum permissible direct impulse current, A: 0.5
Maximum reverse current, uA 25g: 5
Maximum forward voltage, V: 1
at Ipr., A: 0.1
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 4
Working temperature, C: -50…+175
Mounting method: in hole
Housing: DO-35
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3906 pcs. |
19 ֏
×
11 ֏ |
from 100 pcs. — 10 ֏
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2409 pcs.
Brand: ON Semiconductor
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.2
Maximum permissible direct impulse current, A: 0.4
Maximum reverse current, uA 25g: 5
Maximum forward voltage, V: 1
at Ipr., A: 0.01
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 4
Working temperature, C: -55…+175
Mounting method: in hole
Housing: DO-35
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2409 pcs. |
8 ֏ × |
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3698 pcs.
Brand: Nexperia
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 100
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.215
Maximum permissible direct impulse current, A: 0.5
Maximum reverse current, uA 25g: 0.5
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 1.5
Working temperature, C: -65…+150
Mounting method: smd
Housing: SOT-23-3
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3698 pcs. |
8 ֏ × |
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90 pcs.
Brand: Nexperia
Material: silicon
Number of diodes in the case: 2
Diode configuration: 2-independent
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 85
Maximum forward (rectified for half-cycle) current, A: 0.215
Maximum permissible direct impulse current, A: 0.5
Maximum reverse current, uA 25g: 1
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 1.5
Working temperature, C: -65…+150
Mounting method: smd
Housing: SOT-143B
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90 pcs. |
40 ֏ × |
from 100 pcs. — 36 ֏
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12432 pcs.
Brand: Nexperia
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 100
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.25
Maximum permissible direct impulse current, A: 0.5
Maximum reverse current, uA 25g: 0.5
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 1.5
Working temperature, C: -65…+150
Mounting method: smd
Housing: SOD-323
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12432 pcs. |
17 ֏ × |
from 100 pcs. — 11 ֏
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8727 pcs.
Brand: Nexperia
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum forward (rectified for half-cycle) current, A: 0.2
Maximum permissible direct impulse current, A: 0.45
Maximum reverse current, uA 25g: 5
Maximum forward voltage, V: 1
at Ipr., A: 0.1
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 2
Working temperature, C: -65…+200
Mounting method: smd
Housing: SOD-80/MiniMELF
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8727 pcs. |
73 ֏
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41 ֏ |
from 100 pcs. — 39 ֏
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6285 pcs.
Brand: Nexperia
Material: silicon
Number of diodes in the case: 2
Diode configuration: 1-pair, common cathode
Maximum constant reverse voltage, V: 100
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.215
Maximum permissible direct impulse current, A: 0.45
Maximum reverse current, uA 25g: 0.5
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 1.5
Working temperature, C: -65…+150
Mounting method: smd
Housing: SOT-23-3
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6285 pcs. |
6 ֏ × |
from 500 pcs. — 5 ֏
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20453 pcs.
Brand: Nexperia
Material: silicon
Number of diodes in the case: 2
Diode configuration: 1-pair, serial connection
Maximum constant reverse voltage, V: 100
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.215
Maximum permissible direct impulse current, A: 0.5
Maximum reverse current, uA 25g: 0.5
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 1.5
Working temperature, C: -65…+150
Mounting method: smd
Housing: SOT-23-3
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20453 pcs. |
5 ֏ × |
from 600 pcs. — 4 ֏
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7547 pcs.
Brand: Diodes
Material: silicon
Number of diodes in the case: 2
Diode configuration: 1-pair, serial connection
Maximum constant reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.215
Maximum permissible direct impulse current, A: 0.5
Maximum reverse current, uA 25g: 1
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 6
Total capacitance SD, pF: 1.5
Working temperature, C: -65…+150
Mounting method: smd
Housing: SOT-23-3
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7547 pcs. |
20 ֏ × |
from 100 pcs. — 18 ֏
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10384 pcs.
Brand: ON Semiconductor
Material: silicon
Number of diodes in the case: 2
Diode configuration: 1-pair, serial connection
Maximum constant reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.215
Maximum permissible direct impulse current, A: 0.5
Maximum reverse current, uA 25g: 1
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 6
Total capacitance SD, pF: 1.5
Working temperature, C: -65…+150
Mounting method: smd
Housing: SOT-23-3
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10384 pcs. |
13 ֏ × |
from 200 pcs. — 12 ֏
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23759 pcs.
Brand: MCC
Material: silicon
Number of diodes in the case: 2
Diode configuration: 1-pair, serial connection
Maximum constant reverse voltage, V: 70
Maximum forward (rectified for half-cycle) current, A: 0.2
Maximum reverse current, uA 25g: 50
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 6
Total capacitance SD, pF: 2
Working temperature, C: -55…+150
Mounting method: smd
Housing: SOT-23-3
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23759 pcs. |
14 ֏ × |
from 150 pcs. — 13 ֏
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4216 pcs.
Brand: Nexperia
Material: silicon
Number of diodes in the case: 2
Diode configuration: 1-pair, serial connection
Maximum constant reverse voltage, V: 100
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.15
Maximum permissible direct impulse current, A: 0.5
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 1.5
Working temperature, C: -65…+150
Mounting method: smd
Housing: SOD-323
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4216 pcs. |
15 ֏ × |
from 200 pcs. — 14 ֏
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4622 pcs.
Brand: Nexperia
Material: silicon
Number of diodes in the case: 2
Diode configuration: 1-pair, common anode
Maximum constant reverse voltage, V: 90
Maximum pulse reverse voltage, V: 90
Maximum forward (rectified for half-cycle) current, A: 0.215
Maximum permissible direct impulse current, A: 0.5
Maximum reverse current, uA 25g: 0.5
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 2
Working temperature, C: -65…+150
Mounting method: smd
Housing: SOT-23-3
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4622 pcs. |
49 ֏
×
16 ֏ |
from 100 pcs. — 14 ֏
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3369 pcs.
Brand: ON Semiconductor
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.2
Maximum permissible direct impulse current, A: 0.4
Maximum reverse current, uA 25g: 5
Maximum forward voltage, V: 1
at Ipr., A: 0.01
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 2
Working temperature, C: -55…+175
Mounting method: smd
Housing: SOD-80/MiniMELF
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quick view |
3369 pcs. |
49 ֏
×
15 ֏ |
from 100 pcs. — 12 ֏
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Pulse diodes are semiconductor radio components designed for high-frequency pulse circuits.
They are pn-junction semiconductor diodes optimized for capacitance and reverse resistance recovery time (minority carrier dissipation). To do this, the pn-junction area is reduced, and heavily doped materials are used in the manufacture (silicon is alloyed with gold), due to which pulsed diodes have low limiting pulse currents (hundreds of mA) and a small limiting reverse voltage (tens of volts).
You can receive an order at our office and pick-up point in Yerevan. Delivery of goods is carried out throughout Armenia by courier and Haypost.
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Products from the group «Pulse diodes» you can buy wholesale and retail.