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5505 pcs.
Brand: ST Microelectronics
Diode type: Schottky (Single)
Maximum reverse voltage (V): 70 V
Maximum forward current per diode, If: 15 mA
Capacity @ Vr, F: 2 pF @ 0V, 1MHz
Power dissipation: 430 mW
Operating temperature: -65…+200 C (TJ)
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5505 pcs. |
47 ֏ × |
from 100 pcs. — 44 ֏
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820 pcs.
Brand: Infineon
Diode type: PIN (Single)
Maximum reverse voltage (V): 50 V
Maximum forward current per diode, If: 100 mA
Capacity @ Vr, F: 0.3 pF @ 5V, 1MHz
Power dissipation: 250 mW
Operating temperature: +150 C (Max) (TJ)
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820 pcs. |
104 ֏
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77 ֏ |
from 100 pcs. — 60 ֏
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7 days, 1082 pcs.
Brand: NXP
Diode type: PIN (Single)
Maximum reverse voltage (V): 50 V
Maximum forward current per diode, If: 50 mA
Capacity @ Vr, F: 0.35pF at 5V, 1MHz
Power dissipation: 500 MW
Operating temperature: -65…+150 C (TJ)
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7 days, 1082 pcs. |
79 ֏
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42 ֏ |
from 100 pcs. — 36 ֏
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7 days, 884 pcs.
Brand: NXP
Diode type: PIN (Single)
Maximum reverse voltage (V): 175V
Maximum forward current per diode, If: 100 mA
Capacity @ Vr, F: 0.35 pF @ 20V, 1MHz
Power dissipation: 715 mW
Operating temperature: -65…+150 C (TJ)
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7 days, 884 pcs. |
170 ֏
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149 ֏ |
from 100 pcs. — 139 ֏
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7 days, 1301 pcs.
Brand: Infineon
Diode type: Schottky (2-independent)
Maximum reverse voltage (V): 4V
Maximum forward current per diode, If: 110 mA
Capacity @ Vr, F: 0.35 pF @ 0V, 1MHz
Power dissipation: 100 MW
Operating temperature: +150 C (Max) (TJ)
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7 days, 1301 pcs. |
337 ֏ × |
from 100 pcs. — 287 ֏
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7 days, 2 pcs. |
228 ֏ × |
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8 days, 245 pcs.
Brand: Infineon
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8 days, 245 pcs. |
243 ֏ × |
from 10 pcs. — 94 ֏
from 100 pcs. — 80 ֏
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8 days, 40 pcs.
Brand: Infineon
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8 days, 40 pcs. |
174 ֏ × |
from 10 pcs. — 139 ֏
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8 days, 38 pcs.
Brand: Infineon
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8 days, 38 pcs. |
149 ֏ × |
from 10 pcs. — 134 ֏
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8 days, 4 pcs.
Brand: Infineon
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8 days, 4 pcs. |
307 ֏ × |
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2 weeks, 2164 pcs.
Brand: ST Microelectronics
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2 weeks, 2164 pcs. |
50 ֏ × |
from 227 pcs. — 40 ֏
from 454 pcs. — 35 ֏
from 907 pcs. — 30 ֏
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2 weeks, 2012 pcs. |
273 ֏ × |
from 5 pcs. — 114 ֏
from 10 pcs. — 65 ֏
from 100 pcs. — 15 ֏
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2 weeks, 1527 pcs. |
65 ֏ × |
from 113 pcs. — 60 ֏
from 226 pcs. — 55 ֏
from 452 pcs. — 47 ֏
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2 weeks, 394 pcs. |
347 ֏ × |
from 5 pcs. — 174 ֏
from 10 pcs. — 124 ֏
from 100 pcs. — 96 ֏
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2 weeks, 110 pcs. |
322 ֏ × |
from 5 pcs. — 149 ֏
from 10 pcs. — 99 ֏
from 100 pcs. — 87 ֏
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2 weeks, 1519 pcs.
Brand: NXP
Maximum reverse voltage (V): 50 V
Maximum forward current per diode, If: 50 mA
Capacity @ Vr, F: 0.35pF at 5V, 1MHz
Power dissipation: 500 MW
Operating temperature: -65…+150 C(TJ)
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2 weeks, 1519 pcs. |
20 ֏ × |
from 162 pcs. — 16 ֏
from 323 pcs. — 15 ֏
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2 weeks, 239 pcs.
Brand: NXP
Maximum reverse voltage (V): 175V
Maximum forward current per diode, If: 100 mA
Capacity @ Vr, F: 0.35 pF @ 20V, 1MHz
Power dissipation: 715 mW
Operating temperature: -65…+150 C(TJ)
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2 weeks, 239 pcs. |
218 ֏ × |
from 35 pcs. — 208 ֏
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2 weeks, 720 pcs. |
114 ֏ × |
from 99 pcs. — 99 ֏
from 198 pcs. — 90 ֏
from 395 pcs. — 79 ֏
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2 weeks, 563 pcs. |
183 ֏ × |
from 41 pcs. — 174 ֏
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2 weeks, 343 pcs. |
327 ֏ × |
from 5 pcs. — 169 ֏
from 10 pcs. — 124 ֏
from 100 pcs. — 78 ֏
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Microwave diodes are semiconductor devices designed to operate in the ultra-high frequency range.
There are diodes with a pin structure, which between doped regions with high conductivity n and p contain an active i-region, which has low conductivity and a longer lifetime of electric charge carriers. Due to this structure, the capacity of the transition is reduced and the frequency of the element is increased.
Tunnel diodes are semiconductor devices designed to amplify the power signal in the electronic circuits of amplifiers, generators and microwave switches.
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