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6017 pcs.
Brand: ST Microelectronics
Diode type: Schottky (Single)
Maximum reverse voltage (V): 70 V
Maximum forward current per diode, If: 15 mA
Capacity @ Vr, F: 2 pF @ 0V, 1MHz
Power dissipation: 430 mW
Operating temperature: -65…+200 C (TJ)
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6017 pcs. |
45 ֏ × |
from 100 pcs. — 42 ֏
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1077 pcs.
Brand: Infineon
Diode type: PIN (Single)
Maximum reverse voltage (V): 50 V
Maximum forward current per diode, If: 100 mA
Capacity @ Vr, F: 0.3 pF @ 5V, 1MHz
Resistance at If, F: 1 Ohm @ 10mA, 100MHz
Power dissipation: 250 mW
Operating temperature: +150 C (Max) (TJ)
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1077 pcs. |
104 ֏
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74 ֏ |
from 100 pcs. — 58 ֏
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9 days, 1260 pcs.
Brand: NXP
Diode type: PIN (Single)
Maximum reverse voltage (V): 50 V
Maximum forward current per diode, If: 50 mA
Capacity @ Vr, F: 0.35pF at 5V, 1MHz
Resistance at If, F: 5 ohms at 10mA, 100MHz
Power dissipation: 500 MW
Operating temperature: -65…+150 C (TJ)
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9 days, 1260 pcs. |
79 ֏
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41 ֏ |
from 100 pcs. — 34 ֏
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9 days, 3001 pcs.
Brand: NXP
Diode type: PIN (Single)
Maximum reverse voltage (V): 175V
Maximum forward current per diode, If: 100 mA
Capacity @ Vr, F: 0.35 pF @ 20V, 1MHz
Resistance at If, F: 1.35 Ohm @ 100mA, 100MHz
Power dissipation: 715 mW
Operating temperature: -65…+150 C (TJ)
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9 days, 3001 pcs. |
170 ֏
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143 ֏ |
from 100 pcs. — 134 ֏
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9 days, 1344 pcs.
Brand: Infineon
Diode type: Schottky (2-independent)
Maximum reverse voltage (V): 4V
Maximum forward current per diode, If: 110 mA
Capacity @ Vr, F: 0.35 pF @ 0V, 1MHz
Power dissipation: 100 MW
Operating temperature: +150 C (Max) (TJ)
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9 days, 1344 pcs. |
325 ֏ × |
from 100 pcs. — 277 ֏
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2-3 weeks, 255 pcs.
Brand: Infineon
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2-3 weeks, 255 pcs. |
234 ֏ × |
from 10 pcs. — 91 ֏
from 100 pcs. — 77 ֏
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2-3 weeks, 48 pcs.
Brand: Infineon
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2-3 weeks, 48 pcs. |
167 ֏ × |
from 10 pcs. — 134 ֏
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2-3 weeks, 41 pcs.
Brand: Infineon
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2-3 weeks, 41 pcs. |
143 ֏ × |
from 10 pcs. — 129 ֏
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2-3 weeks, 12 pcs.
Brand: Infineon
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2-3 weeks, 12 pcs. |
296 ֏ × |
from 10 pcs. — 205 ֏
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3 weeks, 2164 pcs.
Brand: ST Microelectronics
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3 weeks, 2164 pcs. |
53 ֏ × |
from 227 pcs. — 43 ֏
from 454 pcs. — 35 ֏
from 907 pcs. — 30 ֏
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3 weeks, 1527 pcs. |
67 ֏ × |
from 113 pcs. — 58 ֏
from 226 pcs. — 53 ֏
from 452 pcs. — 46 ֏
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3 weeks, 110 pcs. |
320 ֏ × |
from 5 pcs. — 153 ֏
from 10 pcs. — 105 ֏
from 100 pcs. — 84 ֏
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3 weeks, 1519 pcs.
Brand: NXP
Maximum reverse voltage (V): 50 V
Maximum forward current per diode, If: 50 mA
Capacity @ Vr, F: 0.35pF at 5V, 1MHz
Resistance at If, F: 5 ohms at 10mA, 100MHz
Power dissipation: 500 MW
Operating temperature: -65…+150 C(TJ)
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3 weeks, 1519 pcs. |
24 ֏ × |
from 162 pcs. — 18 ֏
from 323 pcs. — 15 ֏
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3 weeks, 319 pcs.
Brand: NXP
Maximum reverse voltage (V): 175V
Maximum forward current per diode, If: 100 mA
Capacity @ Vr, F: 0.35 pF @ 20V, 1MHz
Resistance at If, F: 1.35 Ohm @ 100mA, 100MHz
Power dissipation: 715 mW
Operating temperature: -65…+150 C(TJ)
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3 weeks, 319 pcs. |
143 ֏ × |
from 140 pcs. — 120 ֏
from 280 pcs. — 105 ֏
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3 weeks, 739 pcs. |
120 ֏ × |
from 99 pcs. — 101 ֏
from 198 pcs. — 91 ֏
from 395 pcs. — 78 ֏
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3 weeks, 703 pcs. |
196 ֏ × |
from 41 pcs. — 172 ֏
from 82 pcs. — 167 ֏
from 164 pcs. — 150 ֏
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3 weeks, 343 pcs. |
282 ֏ × |
from 5 pcs. — 143 ֏
from 10 pcs. — 86 ֏
from 100 pcs. — 47 ֏
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3 weeks, 1965 pcs. |
263 ֏ × |
from 32 pcs. — 229 ֏
from 63 pcs. — 225 ֏
from 125 pcs. — 204 ֏
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3 weeks, 1295 pcs. |
296 ֏ × |
from 5 pcs. — 143 ֏
from 10 pcs. — 101 ֏
from 100 pcs. — 60 ֏
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3 weeks, 2649 pcs. |
124 ֏ × |
from 98 pcs. — 101 ֏
from 196 pcs. — 91 ֏
from 391 pcs. — 79 ֏
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Microwave diodes are semiconductor devices designed to operate in the ultra-high frequency range.
There are diodes with a pin structure, which between doped regions with high conductivity n and p contain an active i-region, which has low conductivity and a longer lifetime of electric charge carriers. Due to this structure, the capacity of the transition is reduced and the frequency of the element is increased.
Tunnel diodes are semiconductor devices designed to amplify the power signal in the electronic circuits of amplifiers, generators and microwave switches.
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