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190 pcs.
Brand: ON Semiconductor
Configuration: Low-Side
Channel type: independent
Number of channels: 2
Type of controlled shutter: N-CH MOSFET
Supply voltage, V: 4.5…18
Logic voltage (VIL), V: 38
Logic voltage (VIH), V: 2
Peak output current rise (Source), A: 5
Peak output current slope (Sink), A: 5
Input type: non-inverting
Rise Time, ns: 12
Nominal decay time (Fall Time), ns: 9
Operating temperature, ° C: -40…+125(TA)
Housing: SOIC-8(0.154 inch)
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190 pcs. |
2 190 ֏
×
1 010 ֏ |
from 5 pcs. — 870 ֏
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799 pcs.
Brand: Infineon
Configuration: Half-Bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 3
Peak output current rise (Source), A: 0.21
Peak output current slope (Sink), A: 0.36
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 100
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: DIP-8(0.300 inch)
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799 pcs. |
1 230 ֏ × |
from 5 pcs. — 1 100 ֏
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806 pcs.
Brand: Infineon
Configuration: Half-Bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 3
Peak output current rise (Source), A: 0.21
Peak output current slope (Sink), A: 0.36
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 100
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: DIP-8(0.300 inch)
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806 pcs. |
1 060 ֏ × |
from 5 pcs. — 1 010 ֏
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617 pcs.
Brand: Infineon
Configuration: Half-Bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 3.3…20
Logic voltage (VIL), V: 6
Logic voltage (VIH), V: 9.5
Peak output current rise (Source), A: 2
Peak output current slope (Sink), A: 2
Input type: non-inverting
Maximum bias voltage, V: 500
Rise Time, ns: 25
Nominal decay time (Fall Time), ns: 17
Operating temperature, ° C: -40…+150(TJ)
Housing: DIP-14
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617 pcs. |
990 ֏ × |
from 5 pcs. — 840 ֏
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274 pcs.
Brand: Infineon
Configuration: Half-Bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…15.6
Input type: RC input circuit
Maximum bias voltage, V: 600
Rise Time, ns: 80
Nominal decay time (Fall Time), ns: 45
Operating temperature, ° C: -40…+125(TJ)
Housing: DIP-8(0.300 inch)
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274 pcs. |
1 430 ֏ × |
from 5 pcs. — 1 220 ֏
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143 pcs.
Brand: Infineon
Configuration: Half-Bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.7
Peak output current rise (Source), A: 1.9
Peak output current slope (Sink), A: 2.3
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 40
Nominal decay time (Fall Time), ns: 20
Operating temperature, ° C: -40…+150(TJ)
Housing: SOIC-8(0.154 inch)
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quick view |
143 pcs. |
3 100 ֏
×
1 040 ֏ |
from 15 pcs. — 890 ֏
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319 pcs.
Brand: Infineon
Configuration: Half-Bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.7
Peak output current rise (Source), A: 1.9
Peak output current slope (Sink), A: 2.3
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 40
Nominal decay time (Fall Time), ns: 20
Operating temperature, ° C: -40…+150(TJ)
Housing: SOIC-14(0.154 inch)
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quick view |
319 pcs. |
6 400 ֏
×
2 450 ֏ |
from 5 pcs. — 2 080 ֏
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296 pcs.
Brand: Infineon
Configuration: Low-Side
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 6…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.7
Peak output current rise (Source), A: 2.3
Peak output current slope (Sink), A: 3.3
Input type: non-inverting
Rise Time, ns: 15
Nominal decay time (Fall Time), ns: 10
Operating temperature, ° C: -40…+150(TJ)
Housing: DIP-8
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296 pcs. |
1 250 ֏ × |
from 15 pcs. — 1 060 ֏
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1138 pcs.
Brand: Infineon
Configuration: Half-Bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.5
Peak output current rise (Source), A: 4
Peak output current slope (Sink), A: 4
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 22
Nominal decay time (Fall Time), ns: 18
Operating temperature, ° C: -40…+150(TJ)
Housing: SOIC-8
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quick view |
1138 pcs. |
2 970 ֏ × |
from 5 pcs. — 2 520 ֏
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651 pcs.
Brand: ON Semiconductor
Configuration: Low-Side
Channel type: independent
Number of channels: 2
Type of controlled shutter: N-CH MOSFET
Supply voltage, V: 6.1…18
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.6
Peak output current rise (Source), A: 1.5
Peak output current slope (Sink), A: 1.5
Input type: non-inverting
Rise Time, ns: 36
Nominal decay time (Fall Time), ns: 32
Operating temperature, ° C: -40…+150(TJ)
Housing: SOIC-8(0.154 inch)
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651 pcs. |
910 ֏
×
540 ֏ |
from 5 pcs. — 458 ֏
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196 pcs.
Brand: Microchip
Configuration: Low-Side
Channel type: One
Number of channels: 1
Type of controlled shutter: N/P-CH MOSFET
Supply voltage, V: 4.5…18
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.4
Peak output current rise (Source), A: 6
Peak output current slope (Sink), A: 6
Input type: non-inverting
Rise Time, ns: 25
Nominal decay time (Fall Time), ns: 25
Operating temperature, ° C: -40…+150(TJ)
Housing: DIP-8(0.300 inch)
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196 pcs. |
2 190 ֏
×
1 390 ֏ |
from 5 pcs. — 1 310 ֏
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9 days, 1161 pcs.
Brand: Infineon
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9 days, 1161 pcs. |
234 ֏ × |
from 15 pcs. — 201 ֏
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9 days, 252 pcs. |
1 490 ֏ × |
from 15 pcs. — 1 270 ֏
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9 days, 153 pcs.
Brand: ON Semiconductor
Configuration: Half-Bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: N-CH MOSFET
Supply voltage, V: 4.6…13.2
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2
Input type: inverting, non-inverting
Maximum bias voltage, V: 35
Rise Time, ns: 20
Nominal decay time (Fall Time), ns: 11
Operating temperature, ° C: 0…+150(TJ)
Housing: DFN-8 EP(3x3)
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9 days, 153 pcs. |
910 ֏
×
670 ֏ |
from 5 pcs. — 630 ֏
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9 days, 625 pcs.
Brand: Fairchild
Configuration: Low-Side
Channel type: One
Number of channels: 1
Type of controlled shutter: N-CH MOSFET
Supply voltage, V: 4.5…18
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2
Peak output current rise (Source), A: 3
Peak output current slope (Sink), A: 3
Input type: inverting, non-inverting
Rise Time, ns: 13
Nominal decay time (Fall Time), ns: 9
Operating temperature, ° C: -55…+150(TJ)
Housing: SOT-23-5
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9 days, 625 pcs. |
1 820 ֏
×
580 ֏ |
from 5 pcs. — 487 ֏
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9 days, 2258 pcs.
Brand: UMW
Configuration: Low-Side
Channel type: Single
Number of channels: 1
Type of controlled shutter: N-CH MOSFET
Supply voltage, V: 4.5…25
Logic voltage (VIL), V: 4.5
Logic voltage (VIH), V: 7.5
Peak output current rise (Source), A: 2
Peak output current slope (Sink), A: 2
Input type: inverting, non-inverting
Rise Time, ns: 15
Nominal decay time (Fall Time), ns: 15
Operating temperature, ° C: -40…+125
Housing: SOT-23-5
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9 days, 2258 pcs. |
148 ֏ × |
from 100 pcs. — 139 ֏
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9 days, 171 pcs.
Brand: ON Semiconductor
Configuration: Half-Bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.5
Peak output current rise (Source), A: 0.09
Peak output current slope (Sink), A: 0.18
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 230
Nominal decay time (Fall Time), ns: 90
Operating temperature, ° C: -40…+150(TJ)
Housing: SOIC-8(0.154 inch)
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9 days, 171 pcs. |
1 280 ֏
×
900 ֏ |
from 5 pcs. — 880 ֏
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9 days, 247 pcs.
Brand: ON Semiconductor
Configuration: Half-Bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 15…20
Logic voltage (VIL), V: 1.2
Logic voltage (VIH), V: 2.9
Peak output current rise (Source), A: 0.35
Peak output current slope (Sink), A: 0.65
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 50
Nominal decay time (Fall Time), ns: 30
Operating temperature, ° C: -40…+150(TJ)
Housing: SOIC-8(0.154 inch)
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quick view |
9 days, 247 pcs. |
1 940 ֏
×
830 ֏ |
from 5 pcs. — 710 ֏
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9 days, 114 pcs.
Brand: ON Semiconductor
Configuration: Half-Bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 15…20
Logic voltage (VIL), V: 1.2
Logic voltage (VIH), V: 2.9
Peak output current rise (Source), A: 0.35
Peak output current slope (Sink), A: 0.65
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 50
Nominal decay time (Fall Time), ns: 30
Operating temperature, ° C: -40…+150 (TJ)
Housing: SOP-14 (0.209 inch)
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9 days, 114 pcs. |
2 430 ֏
×
1 090 ֏ |
from 5 pcs. — 940 ֏
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9 days, 1535 pcs.
Brand: ON Semiconductor
Configuration: Half-Bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.9
Peak output current rise (Source), A: 0.35
Peak output current slope (Sink), A: 0.65
Input type: non-inverting
Maximum bias voltage, V: 200
Rise Time, ns: 60
Nominal decay time (Fall Time), ns: 30
Operating temperature, ° C: -40…+150(TJ)
Housing: SOIC-8(0.154 inch)
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9 days, 1535 pcs. |
580 ֏ × |
from 5 pcs. — 491 ֏
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MOSFET and IGBT transistors control high-power loads in DC and AC circuits. However, by themselves they cannot operate directly from the microcontroller signal, which is too weak for efficient and fast switching.
A driver comes to the rescue - a specialized microcircuit that acts as an amplifier. The main task of the module is to provide a powerful and short-term current pulse for fast charging and discharging of the gate capacity of the transistor. This is critical to minimize power loss and overheating. Using a driver increases the controllability and reliability of the entire system, as well as protects the microcontroller from dangerous voltage surges and interference.
Kinds
Non-isolated drivers are inexpensive and are used in simple configurations. Isolated modules provide isolation of the control circuit from the power transistor. They are indispensable for high security requirements.
Low-side drivers control transistors connected to the "ground". The High-side modules work with devices connected to the power bus. Full-bridge (half-bridge, full-bridge) drivers integrate multi-key management to build bridge circuits.
How to choose a driver
When buying, follow a simple algorithm:
- Define the tasks of the device. Frequency converters, welding inverters, or high-power switching power supplies require drivers with high peak current (2A or more) and reliable isolation. Simpler and more accessible modules may be sufficient to control simple motors or low-current relays.
- Calculate the required current. It depends on the gate charge (Qg) of the transistor and the required switching frequency.
- Check the output voltage. Make sure it is within the acceptable range for your MOSFET/IGBT (usually +15...+20 V for on and 0/-5 V for off).
- Evaluate the security system. For critical tasks, the presence of built-in overload, short circuit and overheating protection is mandatory.
Common errors in the selection and operation of drivers:
- Selecting a module with too low an output current. This causes slow switching, increased dynamic losses, and overheating of the power switch.
- Using an uninsulated driver in floating-potential topologies will lead to incorrect operation and component failure.
- Ignoring the "dead time". In bridge circuits, the absence of a pause between closing one key and opening another causes through currents and instantaneous destruction of transistors.
- Poor PCB wiring. Long conductors from the driver to the gate add parasitic inductance, which can lead to dangerous voltage surges and spontaneous opening of the transistor.
Reliable supplier
In the CHIP and DIP online store, you can buy drivers for any requirements, including both popular integrated circuits (IC) and ready-made power modules with delivery. Our experts will help you understand the characteristics and order the optimal model that is suitable for the price.
Contact us to make your power electronics not only powerful, but also reliable. We guarantee fast order processing and prompt delivery in Moscow and other regions of Russia.
You can receive an order at our office and pick-up point in Yerevan. Delivery of goods is carried out throughout Armenia by courier and Haypost.
Order delivery to Yerevan, Gyumri, Vanadzor and more than 40 cities and towns of Armenia.
Products from the group «MOSFET and IGBT drivers» you can buy wholesale and retail.








