Field effect transistors (FETs, MOSFETs) • Special Offers

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Structure
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Maximum drain-source voltage Usi, V
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Maximum drain-source current at 25 C Isi max..A
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Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)
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Maximum power dissipation Psi max..W
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Slope of characteristic, S
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Housing
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FCA22N60N, Transistor, SupreMOS, N-channel, 600V, 22A, 0.165Ohm [TO-3PN]
Brand: ON Semiconductor
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 22
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.165 Ohm / 11A, 10V
Maximum power dissipation Psi max..W: 205
Slope of characteristic, S: 22
Housing: to-3pn
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6 400 ֏
4 400 ֏
×
from 15 pcs. — 4 350 ֏
FCP16N60N, Transistor, SupreMOST, N-channel, 600V, 16A, 0.170Ohm [TO220]
Brand: ON Semiconductor
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 16
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.199 Ohm / 8A, 10V
Maximum power dissipation Psi max..W: 134
Slope of characteristic, S: 13
Housing: to-220
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6 200 ֏
4 270 ֏
×
from 15 pcs. — 4 240 ֏
FDP032N08, Transistor, PowerTrench, N-channel, 75V, 235A, 3.2mOhm [TO220]
Brand: ON Semiconductor
Structure: N-channel
Maximum drain-source voltage Usi, V: 75
Maximum drain-source current at 25 C Isi max..A: 120
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0032 Ohm/75A, 10V
Maximum power dissipation Psi max..W: 375
Slope of characteristic, S: 180
Housing: to-220
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4 250 ֏
2 790 ֏
×
from 50 pcs. — 2 600 ֏
FDP047N08, Transistor N-MOSFET 75V 164A TO220-3
Brand: ON Semiconductor
Structure: N-channel
Maximum drain-source voltage Usi, V: 75
Maximum drain-source current at 25 C Isi max..A: 164
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0047 Ohm/75A, 10V
Maximum power dissipation Psi max..W: 268
Slope of characteristic, S: 150
Housing: to-220
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4 370 ֏
2 500 ֏
×
from 15 pcs. — 2 240 ֏
IRFP4710PBF, MOSFET N-channel 100V 72A [TO-247AC]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 72
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.014 Ohm / 45A, 10V
Maximum power dissipation Psi max..W: 190
Slope of characteristic, S: 35
Housing: TO-247AC
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2 670 ֏
1 740 ֏
×
from 15 pcs. — 1 710 ֏
FDS6679AZ, Transistor PowerTrench P-channel 30V 13A [SOIC-8-0.154"]
Brand: ON Semiconductor
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 13
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0093 Ohm/13A, 10V
Maximum power dissipation Psi max..W: 2.5
Slope of characteristic, S: 55
Housing: SOIC-8
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730 ֏
445 ֏
×
from 25 pcs. — 426 ֏
IRFHM8329TRPBF, N-channel HEXFET 30V 16A [PQFN 3.3X3.3 8L]
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 16
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0061 Ohm / 20A, 10V
Maximum power dissipation Psi max..W: 33
Slope of characteristic, S: 56
Housing: PQFN-8(3.3X3.3)
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226 ֏ ×
from 15 pcs. — 212 ֏
2SK727, Transistor N-channel 900V 5A 125W [SC-65]
On request
Brand: Fuji Electric
Structure: N-channel
Maximum drain-source voltage Usi, V: 900
Maximum drain-source current at 25 C Isi max..A: 5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 2.5 ohm/2.5A, 10V
Maximum power dissipation Psi max..W: 125
Slope of characteristic, S: 6
Housing: sc-65
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On request
700 ֏ ×
IRF7240PBF, Pch -40V -10.5A SO8
Brand: IR
Structure: P-channel
Maximum drain-source voltage Usi, V: 40
Maximum drain-source current at 25 C Isi max..A: 10.5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.015 Ohm / 10.5A, 10V
Maximum power dissipation Psi max..W: 2.5
Slope of characteristic, S: 17
Housing: SOIC-8
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191 ֏ ×
from 2 pcs. — 190 ֏
IRF7306PBF, Transistor, 2P-channel 30V 3.6A 0.10Ohm [SO-8]
Brand: IR
Structure: 2P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 4
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.1 ohm/1.8A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 2.5
Housing: SOIC-8
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177 ֏ ×
from 25 pcs. — 171 ֏
IRF7389PBF, Transistor, N/P channels 30V 7.3A/-5.3A [SO-8]
Brand: IR
Structure: N / P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 7.3/5.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.029 Ohm / 5.8A, 10V / 0.058 Ohm / 4.9A, 10V
Maximum power dissipation Psi max..W: 2.5
Slope of characteristic, S: 14/7.7
Housing: SOIC-8
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188 ֏ ×
from 25 pcs. — 177 ֏
IRF8736PBF, Transistor, N-channel, 30V, 18A, 2.5W, 0.0048Ohm [SO-8]
Brand: IR
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 18
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0048 Ohm/18A, 10V
Maximum power dissipation Psi max..W: 2.5
Slope of characteristic, S: 52
Housing: SOIC-8
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167 ֏ ×
from 25 pcs. — 157 ֏
FCI7N60, Transistor, SuperFET, N-channel, 600V, 7A, 0.53Ohm [TO262]
Brand: Fairchild
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 7
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.6 Ohm / 3.5A, 10V
Maximum power dissipation Psi max..W: 83
Slope of characteristic, S: 6
Housing: I2PAK
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247 ֏ ×
from 5 pcs. — 246 ֏