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118 pcs.
Brand: ON Semiconductor
Configuration: Low-Side
Channel type: independent
Number of channels: 2
Type of controlled shutter: N-CH MOSFET
Supply voltage, V: 4.5…18
Logic voltage (VIL), V: 38
Logic voltage (VIH), V: 2
Peak output current rise (Source), A: 5
Peak output current slope (Sink), A: 5
Input type: non-inverting
Rise Time, ns: 12
Nominal decay time (Fall Time), ns: 9
Operating temperature, ° C: -40…+125(TA)
Housing: SOIC-8(0.154 inch)
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118 pcs. |
2 190 ֏
×
910 ֏ |
from 5 pcs. — 780 ֏
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967 pcs.
Brand: Infineon
Configuration: Half-Bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 3
Peak output current rise (Source), A: 0.21
Peak output current slope (Sink), A: 0.36
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 100
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: DIP-8(0.300 inch)
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967 pcs. |
840 ֏ × |
from 5 pcs. — 820 ֏
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1208 pcs.
Brand: Infineon
Configuration: Half-Bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 3
Peak output current rise (Source), A: 0.21
Peak output current slope (Sink), A: 0.36
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 100
Nominal decay time (Fall Time), ns: 50
Operating temperature, ° C: -40…+150(TJ)
Housing: DIP-8(0.300 inch)
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1208 pcs. |
960 ֏ × |
from 5 pcs. — 910 ֏
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651 pcs.
Brand: Infineon
Configuration: Half-Bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 3.3…20
Logic voltage (VIL), V: 6
Logic voltage (VIH), V: 9.5
Peak output current rise (Source), A: 2
Peak output current slope (Sink), A: 2
Input type: non-inverting
Maximum bias voltage, V: 500
Rise Time, ns: 25
Nominal decay time (Fall Time), ns: 17
Operating temperature, ° C: -40…+150(TJ)
Housing: DIP-14(0.300 inch)
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651 pcs. |
890 ֏ × |
from 5 pcs. — 760 ֏
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202 pcs.
Brand: Infineon
Configuration: Half-Bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…15.6
Input type: RC input circuit
Maximum bias voltage, V: 600
Rise Time, ns: 80
Nominal decay time (Fall Time), ns: 45
Operating temperature, ° C: -40…+125(TJ)
Housing: DIP-8(0.300 inch)
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202 pcs. |
1 290 ֏ × |
from 5 pcs. — 1 090 ֏
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285 pcs.
Brand: Infineon
Configuration: Half-Bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.7
Peak output current rise (Source), A: 1.9
Peak output current slope (Sink), A: 2.3
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 40
Nominal decay time (Fall Time), ns: 20
Operating temperature, ° C: -40…+150(TJ)
Housing: SOIC-8(0.154 inch)
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285 pcs. |
3 100 ֏
×
940 ֏ |
from 15 pcs. — 800 ֏
|
465 pcs.
Brand: Infineon
Configuration: Half-Bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.7
Peak output current rise (Source), A: 1.9
Peak output current slope (Sink), A: 2.3
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 40
Nominal decay time (Fall Time), ns: 20
Operating temperature, ° C: -40…+150(TJ)
Housing: SOIC-14(0.154 inch)
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465 pcs. |
6 400 ֏
×
2 210 ֏ |
from 5 pcs. — 1 870 ֏
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424 pcs.
Brand: Infineon
Configuration: Low-Side
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 6…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.7
Peak output current rise (Source), A: 2.3
Peak output current slope (Sink), A: 3.3
Input type: non-inverting
Rise Time, ns: 15
Nominal decay time (Fall Time), ns: 10
Operating temperature, ° C: -40…+150(TJ)
Housing: DIP-8(0.300 inch)
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424 pcs. |
1 460 ֏
×
1 120 ֏ |
from 15 pcs. — 950 ֏
|
1256 pcs.
Brand: Infineon
Configuration: Half-Bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.5
Peak output current rise (Source), A: 4
Peak output current slope (Sink), A: 4
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 22
Nominal decay time (Fall Time), ns: 18
Operating temperature, ° C: -40…+150(TJ)
Housing: SOIC-8(0.154 inch)
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1256 pcs. |
2 680 ֏ × |
from 5 pcs. — 2 270 ֏
|
440 pcs.
Brand: ON Semiconductor
Configuration: Low-Side
Channel type: independent
Number of channels: 2
Type of controlled shutter: N-CH MOSFET
Supply voltage, V: 6.1…18
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.6
Peak output current rise (Source), A: 1.5
Peak output current slope (Sink), A: 1.5
Input type: non-inverting
Rise Time, ns: 36
Nominal decay time (Fall Time), ns: 32
Operating temperature, ° C: -40…+150(TJ)
Housing: SOIC-8(0.154 inch)
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440 pcs. |
910 ֏
×
479 ֏ |
from 5 pcs. — 410 ֏
|
305 pcs.
Brand: Microchip
Configuration: Low-Side
Channel type: One
Number of channels: 1
Type of controlled shutter: N/P-CH MOSFET
Supply voltage, V: 4.5…18
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.4
Peak output current rise (Source), A: 6
Peak output current slope (Sink), A: 6
Input type: non-inverting
Rise Time, ns: 25
Nominal decay time (Fall Time), ns: 25
Operating temperature, ° C: -40…+150(TJ)
Housing: DIP-8(0.300 inch)
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305 pcs. |
2 190 ֏
×
1 250 ֏ |
from 5 pcs. — 1 180 ֏
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9 days, 1360 pcs.
Brand: Infineon
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9 days, 1360 pcs. |
210 ֏ × |
from 15 pcs. — 179 ֏
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9 days, 203 pcs. |
1 350 ֏ × |
from 15 pcs. — 1 140 ֏
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9 days, 152 pcs.
Brand: ON Semiconductor
Configuration: Half-Bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: N-CH MOSFET
Supply voltage, V: 4.6…13.2
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2
Input type: inverting, non-inverting
Maximum bias voltage, V: 35
Rise Time, ns: 20
Nominal decay time (Fall Time), ns: 11
Operating temperature, ° C: 0…+150(TJ)
Housing: DFN-8 EP(3x3)
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9 days, 152 pcs. |
910 ֏
×
600 ֏ |
from 5 pcs. — 570 ֏
|
9 days, 1386 pcs.
Brand: Fairchild
Configuration: Low-Side
Channel type: One
Number of channels: 1
Type of controlled shutter: N-CH MOSFET
Supply voltage, V: 4.5…18
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2
Peak output current rise (Source), A: 3
Peak output current slope (Sink), A: 3
Input type: inverting, non-inverting
Rise Time, ns: 13
Nominal decay time (Fall Time), ns: 9
Operating temperature, ° C: -55…+150(TJ)
Housing: SOT-23-5
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9 days, 1386 pcs. |
1 820 ֏
×
520 ֏ |
from 5 pcs. — 438 ֏
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9 days, 2978 pcs. |
132 ֏ × |
from 100 pcs. — 125 ֏
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9-10 days, 6 pcs.
Brand: ON Semiconductor
Configuration: Half-Bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.5
Peak output current rise (Source), A: 0.09
Peak output current slope (Sink), A: 0.18
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 230
Nominal decay time (Fall Time), ns: 90
Operating temperature, ° C: -40…+150(TJ)
Housing: SOIC-8(0.154 inch)
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9-10 days, 6 pcs. |
1 280 ֏
×
810 ֏ |
from 5 pcs. — 790 ֏
|
9 days, 120 pcs.
Brand: ON Semiconductor
Configuration: Half-Bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 15…20
Logic voltage (VIL), V: 1.2
Logic voltage (VIH), V: 2.9
Peak output current rise (Source), A: 0.35
Peak output current slope (Sink), A: 0.65
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 50
Nominal decay time (Fall Time), ns: 30
Operating temperature, ° C: -40…+150(TJ)
Housing: SOIC-8(0.154 inch)
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9 days, 120 pcs. |
1 940 ֏
×
750 ֏ |
from 5 pcs. — 640 ֏
|
9 days, 86 pcs.
Brand: ON Semiconductor
Configuration: Half-Bridge
Channel type: synchronous
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 15…20
Logic voltage (VIL), V: 1.2
Logic voltage (VIH), V: 2.9
Peak output current rise (Source), A: 0.35
Peak output current slope (Sink), A: 0.65
Input type: non-inverting
Maximum bias voltage, V: 600
Rise Time, ns: 50
Nominal decay time (Fall Time), ns: 30
Operating temperature, ° C: -40…+150 (TJ)
Housing: SOP-14 (0.209 inch)
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9 days, 86 pcs. |
2 430 ֏
×
990 ֏ |
from 5 pcs. — 840 ֏
|
9 days, 377 pcs.
Brand: ON Semiconductor
Configuration: Half-Bridge
Channel type: independent
Number of channels: 2
Type of controlled shutter: IGBT, N-CH MOSFET
Supply voltage, V: 10…20
Logic voltage (VIL), V: 0.8
Logic voltage (VIH), V: 2.9
Peak output current rise (Source), A: 0.35
Peak output current slope (Sink), A: 0.65
Input type: non-inverting
Maximum bias voltage, V: 200
Rise Time, ns: 60
Nominal decay time (Fall Time), ns: 30
Operating temperature, ° C: -40…+150(TJ)
Housing: SOIC-8(0.154 inch)
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9 days, 377 pcs. |
1 160 ֏
×
520 ֏ |
from 5 pcs. — 441 ֏
|