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Insulated gate bipolar transistors (IGBTs)

_{1810 of 2024}

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FGH40N60SFDTU, Transistor, IGBT 600V 40A, [TO-247] 925 pcs. Brand: ON Semiconductor Technology / Family: Field Stop Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 80 Pulse collector current (Icm), A: 120 Saturation voltage at rated current, V: 2.9 Maximum power dissipation, W: 290 Turn-on delay time (td (on)) at at 25 ° C, ns: 25 Turn-off delay time (td (off)) at at 25 ° C, ns: 115 Operating temperature (Tj), ° C: -55…+150 Housing: TO-247-3LD	quick view	925 pcs.	4 910 ֏ 2 440 ֏ ×	from 15 pcs. — 2 100 ֏
FGH40N60SMD, Transistor, IGBT, 600V, 80A, 349W [TO-247] 502 pcs. Brand: ON Semiconductor Technology / Family: Field Stop/Gen 2 Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 80 Pulse collector current (Icm), A: 120 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 349 Turn-on delay time (td (on)) at at 25 ° C, ns: 12 Turn-off delay time (td (off)) at at 25 ° C, ns: 92 Operating temperature (Tj), ° C: -55…+175 Housing: TO-247-3LD	quick view	502 pcs.	4 790 ֏ 2 500 ֏ ×	from 15 pcs. — 2 150 ֏
FGH60N60SFDTU, Transistor, IGBT, Field Stop, 600V, 60A, [TO-247] 299 pcs. Brand: ON Semiconductor Technology / Family: Field Stop Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 120 Pulse collector current (Icm), A: 180 Saturation voltage at rated current, V: 2.9 Maximum power dissipation, W: 378 Turn-on delay time (td (on)) at at 25 ° C, ns: 22 Turn-off delay time (td (off)) at at 25 ° C, ns: 134 Operating temperature (Tj), ° C: -55…+150 Housing: TO-247-3LD	quick view	299 pcs.	6 000 ֏ 4 410 ֏ ×	from 15 pcs. — 4 380 ֏
FGH60N60SMD, Transistor, IGBT, Field Stop, 600V, 60A, [TO-247] 281 pcs. Brand: ON Semiconductor Technology / Family: Field Stop/Gen 2 Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 120 Pulse collector current (Icm), A: 180 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 600 Turn-on delay time (td (on)) at at 25 ° C, ns: 18 Turn-off delay time (td (off)) at at 25 ° C, ns: 104 Operating temperature (Tj), ° C: -55…+175 Housing: TO-247-3LD	quick view	281 pcs.	7 800 ֏ 2 620 ֏ ×	from 15 pcs. — 2 250 ֏
GT50JR22 (STA1, E, S), Transistor, IGBT Chip N-CH 600V 50A 230W [TO-3PN] 1500 pcs. Brand: Toshiba Technology / Family: Gen 6.5 Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 50 Pulse collector current (Icm), A: 100 Saturation voltage at rated current, V: 1.55 Maximum power dissipation, W: 230 Turn-on delay time (td (on)) at at 25 ° C, ns: 250 Turn-off delay time (td (off)) at at 25 ° C, ns: 330 Operating temperature (Tj), ° C: -55…+175 Housing: TO-3P(N)	quick view	1500 pcs.	1 400 ֏ 1 070 ֏ ×
IGW40T120, IGBT Chip N-CH Transistor 1200V 40A 270W [PG-TO-247-3.] (G40T120) 387 pcs. Brand: Infineon Technology / Family: TRENCHSTOP and Fieldstop Built-in diode: no Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 75 Pulse collector current (Icm), A: 105 Saturation voltage at rated current, V: 2.3 Maximum power dissipation, W: 270 Turn-on delay time (td (on)) at at 25 ° C, ns: 48 Turn-off delay time (td (off)) at at 25 ° C, ns: 480 Operating temperature (Tj), ° C: -40…+150 Housing: PG-TO247-3	quick view	387 pcs.	5 400 ֏ 4 350 ֏ ×	from 15 pcs. — 4 340 ֏
IHW20N135R5, IGBT Transistor, TRENCHSTOP, 1350V, 20A [PG-TO247-3.](H20PR5) 1683 pcs. Brand: Infineon Technology / Family: TrenchStop Built-in diode: Yes Maximum CE voltage, V: 1350 Maximum CE current at 25 ° C, A: 40 Pulse collector current (Icm), A: 60 Saturation voltage at rated current, V: 1.85 Maximum power dissipation, W: 288 Turn-off delay time (td (off)) at at 25 ° C, ns: 235 Operating temperature (Tj), ° C: -40…+175 Housing: PG-TO247-3	quick view	1683 pcs.	830 ֏ ×	from 15 pcs. — 700 ֏
RJH60F5DPQ-A0 # T0, IGBT transistor 600V 80A 260.4W [TO-247A] 166 pcs. Brand: Renesas Technology / Family: Trench Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 80 Saturation voltage at rated current, V: 1.8 Maximum power dissipation, W: 260.4 Turn-on delay time (td (on)) at at 25 ° C, ns: 53 Turn-off delay time (td (off)) at at 25 ° C, ns: 105 Operating temperature (Tj), ° C: -55…+150 Housing: TO-247A	quick view	166 pcs.	4 000 ֏ 2 810 ֏ ×	from 5 pcs. — 2 660 ֏
STGP7NC60HD, Transistor, fast IGBT with Ultrafast diode, 600V, 25A [TO-220] 313 pcs. Brand: ST Microelectronics Technology / Family: PowerMESH Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 25 Pulse collector current (Icm), A: 50 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 80 Turn-on delay time (td (on)) at at 25 ° C, ns: 18.5 Turn-off delay time (td (off)) at at 25 ° C, ns: 72 Operating temperature (Tj), ° C: -55…+150 Housing: to-220	quick view	313 pcs.	1 400 ֏ 1 330 ֏ ×	from 15 pcs. — 1 260 ֏
STGW20NC60VD, IGBT transistor 600V 30A 200W [TO-247] 248 pcs. Brand: ST Microelectronics Technology / Family: PowerMESH Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 60 Pulse collector current (Icm), A: 150 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 200 Turn-on delay time (td (on)) at at 25 ° C, ns: 31 Turn-off delay time (td (off)) at at 25 ° C, ns: 100 Operating temperature (Tj), ° C: -55…+150 Housing: TO-247	quick view	248 pcs.	3 340 ֏ 2 180 ֏ ×	from 15 pcs. — 1 920 ֏
FGA25N120ANTDTU, IGBT transistor 1200V 25A 312W, built-in diode [TO-3PN] 17 pcs. Brand: ON Semiconductor Technology / Family: NPT Trench Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 50 Pulse collector current (Icm), A: 90 Saturation voltage at rated current, V: 2.65 Maximum power dissipation, W: 312 Turn-on delay time (td (on)) at at 25 ° C, ns: 50 Turn-off delay time (td (off)) at at 25 ° C, ns: 190 Operating temperature (Tj), ° C: -55…+150 Housing: TO-3P	quick view	17 pcs.	2 910 ֏ 2 170 ֏ ×	from 50 pcs. — 1 870 ֏
FGL40N120ANDTU, IGBT transistor 1200V 64A 500W + diode [TO-264] 7 pcs. Brand: ON Semiconductor Technology / Family: NPT Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 64 Pulse collector current (Icm), A: 160 Saturation voltage at rated current, V: 3.2 Maximum power dissipation, W: 500 Turn-on delay time (td (on)) at at 25 ° C, ns: 15 Turn-off delay time (td (off)) at at 25 ° C, ns: 110 Operating temperature (Tj), ° C: -55…+150 Housing: TO-264	quick view	7 pcs.	8 300 ֏ 3 720 ֏ ×	from 15 pcs. — 3 200 ֏
HGTG30N60A4, IGBT Transistor 600V 75A 463W [TO-247.] [EOL] 699 pcs. Brand: ON Semiconductor Technology / Family: SMPS Series Built-in diode: no Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 75 Pulse collector current (Icm), A: 240 Saturation voltage at rated current, V: 2.6 Maximum power dissipation, W: 463 Turn-on delay time (td (on)) at at 25 ° C, ns: 25 Turn-off delay time (td (off)) at at 25 ° C, ns: 150 Operating temperature (Tj), ° C: -55…+150 Housing: TO-247	quick view	699 pcs.	1 500 ֏ ×	from 15 pcs. — 1 290 ֏
NGD8201ANT4G, IGBT Transistor 440V 20A 125W [D-PAK] [EOL] 10 pcs. Brand: Littelfuse Technology / Family: Ignition Built-in diode: no Maximum CE voltage, V: 440 Maximum CE current at 25 ° C, A: 20 Pulse collector current (Icm), A: 50 Saturation voltage at rated current, V: 1.9 Maximum power dissipation, W: 125 Turn-off delay time (td (off)) at at 25 ° C, ns: 5000 Operating temperature (Tj), ° C: -55…+150 Housing: DPAK/TO-252AA	quick view	10 pcs.	4 200 ֏ ×
SGW25N120, IGBT Transistor, NPT, 1200V, 25A [PG-TO-247-3.] [EOL] 137 pcs. Brand: Infineon Technology / Family: NPT Built-in diode: no Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 46 Pulse collector current (Icm), A: 84 Saturation voltage at rated current, V: 3.6 Maximum power dissipation, W: 313 Turn-on delay time (td (on)) at at 25 ° C, ns: 45 Turn-off delay time (td (off)) at at 25 ° C, ns: 730 Operating temperature (Tj), ° C: -55…+150 Housing: PG-TO247-3	quick view	137 pcs.	4 130 ֏ ×	from 15 pcs. — 3 900 ֏
CRG05T60A44S-G, IGBT 650V 5A 55W Trench FS III Transistor [DPAK /TO-252] 9 days, 189 pcs. Brand: CRMICRO Technology / Family: Trench FS III Built-in diode: Yes Maximum CE voltage, V: 650 Maximum CE current at 25 ° C, A: 10 Pulse collector current (Icm), A: 15 Saturation voltage at rated current, V: 1.5 Maximum power dissipation, W: 55 Turn-on delay time (td (on)) at at 25 ° C, ns: 18.48 Turn-off delay time (td (off)) at at 25 ° C, ns: 65.59 Operating temperature (Tj), ° C: -55…+150 Housing: dpak	quick view	9 days, 189 pcs.	560 ֏ ×	from 15 pcs. — 520 ֏
CRG15T120BK3SD, IGBT 1200V 15A 236W Trench FS III Transistor [TO-247] 9 days, 398 pcs. Brand: CRMICRO Technology / Family: Trench FS III Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 30 Pulse collector current (Icm), A: 45 Saturation voltage at rated current, V: 2 Maximum power dissipation, W: 236 Turn-on delay time (td (on)) at at 25 ° C, ns: 35 Turn-off delay time (td (off)) at at 25 ° C, ns: 100 Operating temperature (Tj), ° C: -55…+150 Housing: TO-247	quick view	9 days, 398 pcs.	970 ֏ ×	from 15 pcs. — 890 ֏
CRG15T120BNR3S, IGBT Transistor 1200V 15A 156W Trench FS-RC III [TO-3P(N)] 9 days, 248 pcs. Brand: CRMICRO Technology / Family: Trench FS-RC III Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 30 Pulse collector current (Icm), A: 45 Saturation voltage at rated current, V: 1.95 Maximum power dissipation, W: 156 Turn-on delay time (td (on)) at at 25 ° C, ns: 14 Turn-off delay time (td (off)) at at 25 ° C, ns: 107 Operating temperature (Tj), ° C: -55…+150 Housing: TO-3P(N)	quick view	9 days, 248 pcs.	670 ֏ ×	from 15 pcs. — 610 ֏
CRG15T60A83L, IGBT Transistor 600V 15A 96W Trench FS III [TO-220] 9 days, 277 pcs. Brand: CRMICRO Technology / Family: Trench FS III Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 30 Pulse collector current (Icm), A: 45 Saturation voltage at rated current, V: 1.7 Maximum power dissipation, W: 96 Turn-on delay time (td (on)) at at 25 ° C, ns: 30 Turn-off delay time (td (off)) at at 25 ° C, ns: 45 Operating temperature (Tj), ° C: -55…+150 Housing: to-220	quick view	9 days, 277 pcs.	540 ֏ ×	from 15 pcs. — 492 ֏
CRG15T60A93L, IGBT 600V 15A 26W Trench FS III Transistor [TO-220F] 9 days, 107 pcs. Brand: CRMICRO Technology / Family: Trench FS III Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 30 Pulse collector current (Icm), A: 45 Saturation voltage at rated current, V: 1.7 Maximum power dissipation, W: 26 Turn-on delay time (td (on)) at at 25 ° C, ns: 30 Turn-off delay time (td (off)) at at 25 ° C, ns: 45 Operating temperature (Tj), ° C: -55…+150 Housing: TO-220F	quick view	9 days, 107 pcs.	385 ֏ ×	from 15 pcs. — 351 ֏

IGBT transistors (insulated gate bipolar transistors) are three-electrode power electronic devices that are used as a powerful electronic switch in inverters, switching power supplies and electric drive control systems.

The internal structure of IGBT transistors has the form of a cascade connection of two electronic switches: input switches based on field-effect transistors control powerful switches based on bipolar transistors. The control electrode is the gate (as in the field), and the other two electrodes are the emitter and collector (as in the bipolar).

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Insulated gate bipolar transistors (IGBTs)

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