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Insulated gate bipolar transistors (IGBTs)

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FGH40N60SFDTU, Transistor, IGBT 600V 40A, [TO-247] 510 pcs. Brand: ON Semiconductor Technology / Family: Field Stop Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 80 Pulse collector current (Icm), A: 120 Saturation voltage at rated current, V: 2.9 Maximum power dissipation, W: 290 Turn-on delay time (td (on)) at at 25 ° C, ns: 25 Turn-off delay time (td (off)) at at 25 ° C, ns: 115 Operating temperature (Tj), ° C: -55…+150 Housing: TO-247-3LD	quick view	510 pcs.	4 910 ֏ 2 710 ֏ ×	from 15 pcs. — 2 330 ֏
FGH40N60SMD, Transistor, IGBT, 600V, 80A, 349W [TO-247] 320 pcs. Brand: ON Semiconductor Technology / Family: Field Stop/Gen 2 Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 80 Pulse collector current (Icm), A: 120 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 349 Turn-on delay time (td (on)) at at 25 ° C, ns: 12 Turn-off delay time (td (off)) at at 25 ° C, ns: 92 Operating temperature (Tj), ° C: -55…+175 Housing: TO-247-3LD	quick view	320 pcs.	4 790 ֏ 2 770 ֏ ×	from 15 pcs. — 2 380 ֏
FGH60N60SFDTU, Transistor, IGBT, Field Stop, 600V, 60A, [TO-247] 130 pcs. Brand: ON Semiconductor Technology / Family: Field Stop Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 120 Pulse collector current (Icm), A: 180 Saturation voltage at rated current, V: 2.9 Maximum power dissipation, W: 378 Turn-on delay time (td (on)) at at 25 ° C, ns: 22 Turn-off delay time (td (off)) at at 25 ° C, ns: 134 Operating temperature (Tj), ° C: -55…+150 Housing: TO-247-3LD	quick view	130 pcs.	6 000 ֏ 4 910 ֏ ×	from 15 pcs. — 4 850 ֏
FGH60N60SMD, Transistor, IGBT, Field Stop, 600V, 60A, [TO-247] 744 pcs. Brand: ON Semiconductor Technology / Family: Field Stop/Gen 2 Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 120 Pulse collector current (Icm), A: 180 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 600 Turn-on delay time (td (on)) at at 25 ° C, ns: 18 Turn-off delay time (td (off)) at at 25 ° C, ns: 104 Operating temperature (Tj), ° C: -55…+175 Housing: TO-247-3LD	quick view	744 pcs.	7 800 ֏ 2 900 ֏ ×	from 15 pcs. — 2 500 ֏
GT50JR22 (STA1, E, S), Transistor, IGBT Chip N-CH 600V 50A 230W [TO-3PN] 2109 pcs. Brand: Toshiba Technology / Family: Gen 6.5 Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 50 Pulse collector current (Icm), A: 100 Saturation voltage at rated current, V: 1.55 Maximum power dissipation, W: 230 Turn-on delay time (td (on)) at at 25 ° C, ns: 250 Turn-off delay time (td (off)) at at 25 ° C, ns: 330 Operating temperature (Tj), ° C: -55…+175 Housing: TO-3P(N)	quick view	2109 pcs.	1 400 ֏ 1 190 ֏ ×
IGW40T120, IGBT Chip N-CH Transistor 1200V 40A 270W [PG-TO-247-3.] (G40T120) 340 pcs. Brand: Infineon Technology / Family: TRENCHSTOP and Fieldstop Built-in diode: No Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 75 Pulse collector current (Icm), A: 105 Saturation voltage at rated current, V: 2.3 Maximum power dissipation, W: 270 Turn-on delay time (td (on)) at at 25 ° C, ns: 48 Turn-off delay time (td (off)) at at 25 ° C, ns: 480 Operating temperature (Tj), ° C: -40…+150 Housing: PG-TO247-3	quick view	340 pcs.	5 400 ֏ 4 840 ֏ ×	from 15 pcs. — 4 810 ֏
IHW20N135R5, IGBT Transistor, TRENCHSTOP, 1350V, 20A [PG-TO247-3.](H20PR5) 606 pcs. Brand: Infineon Technology / Family: TrenchStop Built-in diode: Yes Maximum CE voltage, V: 1350 Maximum CE current at 25 ° C, A: 40 Pulse collector current (Icm), A: 60 Saturation voltage at rated current, V: 1.85 Maximum power dissipation, W: 288 Turn-off delay time (td (off)) at at 25 ° C, ns: 235 Operating temperature (Tj), ° C: -40…+175 Housing: PG-TO247-3	quick view	606 pcs.	920 ֏ ×	from 15 pcs. — 780 ֏
RJH60F5DPQ-A0 # T0, IGBT transistor 600V 80A 260.4W [TO-247A] 179 pcs. Brand: Renesas Technology / Family: Trench Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 80 Saturation voltage at rated current, V: 1.8 Maximum power dissipation, W: 260.4 Turn-on delay time (td (on)) at at 25 ° C, ns: 53 Turn-off delay time (td (off)) at at 25 ° C, ns: 105 Operating temperature (Tj), ° C: -55…+150 Housing: TO-247A	quick view	179 pcs.	4 000 ֏ 3 120 ֏ ×	from 5 pcs. — 2 950 ֏
STGP7NC60HD, Transistor, fast IGBT with Ultrafast diode, 600V, 25A [TO-220] 207 pcs. Brand: ST Microelectronics Technology / Family: PowerMESH Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 25 Pulse collector current (Icm), A: 50 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 80 Turn-on delay time (td (on)) at at 25 ° C, ns: 18.5 Turn-off delay time (td (off)) at at 25 ° C, ns: 72 Operating temperature (Tj), ° C: -55…+150 Housing: TO-220	quick view	207 pcs.	1 480 ֏ ×	from 15 pcs. — 1 400 ֏
STGW20NC60VD, IGBT transistor 600V 30A 200W [TO-247] 280 pcs. Brand: ST Microelectronics Technology / Family: PowerMESH Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 60 Pulse collector current (Icm), A: 150 Saturation voltage at rated current, V: 2.5 Maximum power dissipation, W: 200 Turn-on delay time (td (on)) at at 25 ° C, ns: 31 Turn-off delay time (td (off)) at at 25 ° C, ns: 100 Operating temperature (Tj), ° C: -55…+150 Housing: TO-247	quick view	280 pcs.	3 340 ֏ 2 410 ֏ ×	from 15 pcs. — 2 130 ֏
FGA25N120ANTDTU, IGBT Transistor 1200V 25A 312W [TO-3PN.] [EOL] 15 pcs. Brand: ON Semiconductor Technology / Family: NPT Trench Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 50 Pulse collector current (Icm), A: 90 Saturation voltage at rated current, V: 2.65 Maximum power dissipation, W: 312 Turn-on delay time (td (on)) at at 25 ° C, ns: 50 Turn-off delay time (td (off)) at at 25 ° C, ns: 190 Operating temperature (Tj), ° C: -55…+150 Housing: TO-3P	quick view	15 pcs.	3 530 ֏ ×
FGL40N120ANDTU, IGBT Transistor 1200V 64A 500W [TO-264.] [EOL] 7 pcs. Brand: ON Semiconductor Technology / Family: NPT Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 64 Pulse collector current (Icm), A: 160 Saturation voltage at rated current, V: 3.2 Maximum power dissipation, W: 500 Turn-on delay time (td (on)) at at 25 ° C, ns: 15 Turn-off delay time (td (off)) at at 25 ° C, ns: 110 Operating temperature (Tj), ° C: -55…+150 Housing: TO-264	quick view	7 pcs.	8 500 ֏ ×
HGTG30N60A4, IGBT Transistor 600V 75A 463W [TO-247.] [EOL] 5 pcs. Brand: ON Semiconductor Technology / Family: SMPS Series Built-in diode: No Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 75 Pulse collector current (Icm), A: 240 Saturation voltage at rated current, V: 2.6 Maximum power dissipation, W: 463 Turn-on delay time (td (on)) at at 25 ° C, ns: 25 Turn-off delay time (td (off)) at at 25 ° C, ns: 150 Operating temperature (Tj), ° C: -55…+150 Housing: TO-247	quick view	5 pcs.	850 ֏ ×
NGD8201ANT4G, IGBT Transistor 440V 20A 125W [DPAK.] [EOL] 10 pcs. Brand: Littelfuse Technology / Family: Ignition Built-in diode: No Maximum CE voltage, V: 440 Maximum CE current at 25 ° C, A: 20 Pulse collector current (Icm), A: 50 Saturation voltage at rated current, V: 1.9 Maximum power dissipation, W: 125 Turn-off delay time (td (off)) at at 25 ° C, ns: 5000 Operating temperature (Tj), ° C: -55…+150 Housing: DPAK/TO-252AA	quick view	10 pcs.	4 150 ֏ ×
SGW25N120, IGBT Transistor, NPT, 1200V, 25A [PG-TO-247-3.] [EOL] 19 pcs. Brand: Infineon Technology / Family: NPT Built-in diode: No Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 46 Pulse collector current (Icm), A: 84 Saturation voltage at rated current, V: 3.6 Maximum power dissipation, W: 313 Turn-on delay time (td (on)) at at 25 ° C, ns: 45 Turn-off delay time (td (off)) at at 25 ° C, ns: 730 Operating temperature (Tj), ° C: -55…+150 Housing: PG-TO247-3	quick view	19 pcs.	4 080 ֏ ×	from 15 pcs. — 3 860 ֏
CRG05T60A44S-G, IGBT 650V 5A 55W Trench FS III Transistor [DPAK /TO-252] 9 days, 153 pcs. Brand: CRMICRO Technology / Family: Trench FS III Built-in diode: Yes Maximum CE voltage, V: 650 Maximum CE current at 25 ° C, A: 10 Pulse collector current (Icm), A: 15 Saturation voltage at rated current, V: 1.5 Maximum power dissipation, W: 55 Turn-on delay time (td (on)) at at 25 ° C, ns: 18.48 Turn-off delay time (td (off)) at at 25 ° C, ns: 65.59 Operating temperature (Tj), ° C: -55…+150 Housing: dpak	quick view	9 days, 153 pcs.	620 ֏ ×	from 15 pcs. — 570 ֏
CRG15T120BK3SD, IGBT 1200V 15A 236W Trench FS III Transistor [TO-247] 9 days, 244 pcs. Brand: CRMICRO Technology / Family: Trench FS III Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 30 Pulse collector current (Icm), A: 45 Saturation voltage at rated current, V: 2 Maximum power dissipation, W: 236 Turn-on delay time (td (on)) at at 25 ° C, ns: 35 Turn-off delay time (td (off)) at at 25 ° C, ns: 100 Operating temperature (Tj), ° C: -55…+150 Housing: TO-247	quick view	9 days, 244 pcs.	1 080 ֏ ×	from 15 pcs. — 990 ֏
CRG15T120BNR3S, IGBT Transistor 1200V 15A 156W Trench FS-RC III [TO-3P(N)] 9 days, 662 pcs. Brand: CRMICRO Technology / Family: Trench FS-RC III Built-in diode: Yes Maximum CE voltage, V: 1200 Maximum CE current at 25 ° C, A: 30 Pulse collector current (Icm), A: 45 Saturation voltage at rated current, V: 1.95 Maximum power dissipation, W: 156 Turn-on delay time (td (on)) at at 25 ° C, ns: 14 Turn-off delay time (td (off)) at at 25 ° C, ns: 107 Operating temperature (Tj), ° C: -55…+150 Housing: TO-3P(N)	quick view	9 days, 662 pcs.	740 ֏ ×	from 15 pcs. — 680 ֏
CRG15T60A83L, IGBT Transistor 600V 15A 96W Trench FS III [TO-220] 9 days, 76 pcs. Brand: CRMICRO Technology / Family: Trench FS III Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 30 Pulse collector current (Icm), A: 45 Saturation voltage at rated current, V: 1.7 Maximum power dissipation, W: 96 Turn-on delay time (td (on)) at at 25 ° C, ns: 30 Turn-off delay time (td (off)) at at 25 ° C, ns: 45 Operating temperature (Tj), ° C: -55…+150 Housing: TO-220	quick view	9 days, 76 pcs.	720 ֏ ×	from 15 pcs. — 670 ֏
CRG15T60A93L, IGBT 600V 15A 26W Trench FS III Transistor [TO-220F] 9 days, 51 pcs. Brand: CRMICRO Technology / Family: Trench FS III Built-in diode: Yes Maximum CE voltage, V: 600 Maximum CE current at 25 ° C, A: 30 Pulse collector current (Icm), A: 45 Saturation voltage at rated current, V: 1.7 Maximum power dissipation, W: 26 Turn-on delay time (td (on)) at at 25 ° C, ns: 30 Turn-off delay time (td (off)) at at 25 ° C, ns: 45 Operating temperature (Tj), ° C: -55…+150 Housing: TO-220F	quick view	9 days, 51 pcs.	427 ֏ ×	from 15 pcs. — 391 ֏

IGBT transistors (insulated gate bipolar transistors) are three-electrode power electronic devices that are used as a powerful electronic switch in inverters, switching power supplies and electric drive control systems.

The internal structure of IGBT transistors has the form of a cascade connection of two electronic switches: input switches based on field-effect transistors control powerful switches based on bipolar transistors. The control electrode is the gate (as in the field), and the other two electrodes are the emitter and collector (as in the bipolar).

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Insulated gate bipolar transistors (IGBTs)

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