Field effect transistors (FETs, MOSFETs)

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Maximum drain-source voltage Usi, V
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Maximum drain-source current at 25 C Isi max..A
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Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)
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Maximum power dissipation Psi max..W
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Slope of characteristic, S
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Yerevan
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2N7002,215, Transistor, N-channel, 60V, 0.3A [SOT-23]
9-10 days, 135 pcs.
Brand: Nexperia
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 5 Ohm / 0.5A, 10V
Maximum power dissipation Psi max..W: 0.83
Housing: SOT-23-3
quick view
9-10 days,
135 pcs.
15 ֏ ×
from 100 pcs. — 12 ֏
2N7002K, N-MOSFET Transistor 60V 0.34A 0.15W 0.9Ohm [SOT-23-3.] (2N7002K-T1-GE3)
9-10 days, 75 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 2 Ohm / 0.5A, 10V
Maximum power dissipation Psi max..W: 0.35
Housing: SOT-23-3
quick view
9-10 days,
75 pcs.
13 ֏ ×
from 100 pcs. — 11 ֏
2N7002K-T1-GE3, N-CH Si 60V 0.3A 3-Pin Transistor [SOT-23]
9-10 days, 86 pcs.
Brand: Vishay
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 2 Ohm / 0.5A, 10V
Maximum power dissipation Psi max..W: 0.35
Housing: SOT-23-3
quick view
9-10 days,
86 pcs.
79 ֏
33 ֏
×
from 100 pcs. — 28 ֏
2SK3878(STA1,E,S), N-MOSFET Transistor 900V 9A 150W [SC-65 / 2- 16C1B.]
9-10 days, 12 pcs.
Brand: Toshiba
Structure: N-channel
Maximum drain-source voltage Usi, V: 900
Maximum drain-source current at 25 C Isi max..A: 9
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 1.3 Ohm / 4A, 10V
Maximum power dissipation Psi max..W: 150
Slope of characteristic, S: 7
Housing: SC-65/2-16C1B
quick view
9-10 days,
12 pcs.
2 210 ֏ ×
AO3400A, N-MOSFET Transistor 30V 5.8A 1.4W 0.028Ohm [SOT-23-3.]
9-10 days, 55 pcs.
Brand: Alpha & Omega
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 5.8
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0265 Ohm / 5.7A, 10V
Maximum power dissipation Psi max..W: 1.4
Slope of characteristic, S: 33
Housing: SOT-23-3
quick view
9-10 days,
55 pcs.
60 ֏ ×
from 40 pcs. — 53 ֏
AO3401A, P-MOSFET Transistor 30V 4A [SOT-23-3.]
9-10 days, 57 pcs.
Brand: Alpha & Omega
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 4
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.044 Ohm / 4.3A, 10V
Maximum power dissipation Psi max..W: 1.4
Slope of characteristic, S: 17
Housing: SOT-23-3
quick view
9-10 days,
57 pcs.
38 ֏ ×
from 100 pcs. — 35 ֏
AO3407A, 30V P-MOSFET Transistor 4.3A [SOT-23-3.]
9-10 days, 42 pcs.
Brand: Alpha & Omega
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 4.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.048 Ohm / 4.3A, 10V
Maximum power dissipation Psi max..W: 1.4
Slope of characteristic, S: 10
Housing: SOT-23-3
quick view
9-10 days,
42 pcs.
58 ֏ ×
from 50 pcs. — 53 ֏
AO4407AL, 30V 12A P-MOSFET Transistor [SOIC-8.]
9-10 days, 22 pcs.
Brand: Alpha & Omega
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 12
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.011 Ohm / 12A, 20V
Maximum power dissipation Psi max..W: 3.1
Slope of characteristic, S: 21
Housing: SOIC-8
quick view
9-10 days,
22 pcs.
730 ֏
236 ֏
×
from 15 pcs. — 220 ֏
AO4606, N/P-MOSFET Transistor 30V 6/6.5A 2W 0.03/0.028Ohm [SOIC-8 / SOP-8.]
9-10 days, 29 pcs.
Brand: Alpha & Omega
Structure: N / P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 6.9/6
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.03 Ohm / 6A, 10V / 0.028 Ohm / 6.5A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 15/18
Housing: SOIC-8
quick view
9-10 days,
29 pcs.
540 ֏
167 ֏
×
from 15 pcs. — 158 ֏
AON6414AL, MOSFET Transistor N-channel 30V [DFN-8 (5x6).]
9-10 days, 9 pcs.
Brand: Alpha & Omega
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 13
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.008 ohm/20A, 10V
Maximum power dissipation Psi max..W: 2.3
Housing: DFN-8(5X6)
quick view
9-10 days,
9 pcs.
387 ֏ ×
from 10 pcs. — 358 ֏
AON6512, MOSFET, N-channel, 30 V, 54 A, [DFN-8 5X6 EP.]
9-10 days, 19 pcs.
Brand: Alpha & Omega
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 54
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0017 Ohm / 20A, 10V
Maximum power dissipation Psi max..W: 7.4
Slope of characteristic, S: 85
Housing: DFN-8(5X6)
quick view
9-10 days,
19 pcs.
298 ֏ ×
from 10 pcs. — 277 ֏
AP4525GEH, Transistor, N + P-channel, 40V, 15 / -12A, 28 / 42mOhm [TO-252-4L]
9-10 days, 12 pcs.
Brand: Advanced Power
Structure: N / P channels
Maximum drain-source voltage Usi, V: 40
Maximum drain-source current at 25 C Isi max..A: 15/12
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.028 Ohm / 15A, 10V / 0.042 Ohm / 12A, 10V
Maximum power dissipation Psi max..W: 10.4
Slope of characteristic, S: 6/5
Housing: DPAK-5(4 Leads+Tab)
quick view
9-10 days,
12 pcs.
730 ֏
444 ֏
×
from 15 pcs. — 410 ֏
AUIRLR2905Z, Transistor, Auto Q101 Nkan 55V 60A [D-PAK]
9-10 days, 12 pcs.
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 55
Maximum drain-source current at 25 C Isi max..A: 60
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.027 Ohm / 25A, 10V
Maximum power dissipation Psi max..W: 110
Slope of characteristic, S: 21
Housing: DPAK(2 Leads+Tab)
quick view
9-10 days,
12 pcs.
1 940 ֏
1 100 ֏
×
from 15 pcs. — 930 ֏
BF998E6327HTSA1, 2N Channel Transistor, RF Radio Circuits [SOT-143]
9-10 days, 26 pcs.
Brand: Infineon
Structure: 2N channels
Maximum drain-source voltage Usi, V: 12
Maximum drain-source current at 25 C Isi max..A: 0.03
Housing: SOT-143
quick view
9-10 days,
26 pcs.
105 ֏ ×
from 50 pcs. — 86 ֏
BS170, Transistor, N-channel, 60V, 0.5A [TO-92]
9-10 days, 110 pcs.
Brand: ON Semiconductor
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 5 Ohm / 0.2A, 10V
Maximum power dissipation Psi max..W: 0.83
Slope of characteristic, S: 0.32
Housing: TO-92
quick view
9-10 days,
110 pcs.
140 ֏
105 ֏
×
from 100 pcs. — 91 ֏
BSC350N20NSFDATMA1, MOSFET N-channel 200V 35A [TDSON-8 EP]
9-10 days, 8 pcs.
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 200
Maximum drain-source current at 25 C Isi max..A: 35
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.035 ohm/35A, 10V
Maximum power dissipation Psi max..W: 150
Housing: PG-TDSON-8
quick view
9-10 days,
8 pcs.
1 460 ֏
1 330 ֏
×
from 15 pcs. — 1 310 ֏
BSH201,215, 60V 0.3A 0.417W 2.5Ohm P-MOSFET Transistor [SOT-23-3.]
9-10 days, 37 pcs.
Brand: Nexperia
Structure: P-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 2.5 Ohm / 0.16A, 10V
Maximum power dissipation Psi max..W: 0.417
Slope of characteristic, S: 0.35
Housing: SOT-23-3
quick view
9-10 days,
37 pcs.
141 ֏ ×
from 15 pcs. — 129 ֏
BSS138, N-MOSFET Transistor 50V 0.22A 0.35W 1.6Ohm [SOT-23-3.] (=BSS138LT1G, BSS138-7-F)
9-10 days, 43 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 50
Maximum drain-source current at 25 C Isi max..A: 0.22
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 3.5 Ohm / 0.22A, 10V
Maximum power dissipation Psi max..W: 0.36
Slope of characteristic, S: 0.1
Housing: SOT-23-3
quick view
9-10 days,
43 pcs.
31 ֏
11 ֏
×
from 100 pcs. — 10 ֏
BSS84,215, Transistor, P-channel, 50V 130mA [SOT-23]
9-10 days, 37 pcs.
Brand: Nexperia
Structure: P-channel
Maximum drain-source voltage Usi, V: 50
Maximum drain-source current at 25 C Isi max..A: 0.13
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 10 Ohm / 0.1A, 5V
Maximum power dissipation Psi max..W: 0.36
Slope of characteristic, S: 270
Housing: SOT-23-3
quick view
9-10 days,
37 pcs.
116 ֏
62 ֏
×
from 100 pcs. — 52 ֏
quick view
9-10 days,
32 pcs.
258 ֏ ×
from 50 pcs. — 248 ֏
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Field effect transistors are semiconductor devices through which flows of electric charge carriers flow. These flows are regulated by a transverse electric field created by a voltage applied between drain and gate or source and gate (drain and source are outer layers of semiconductors, gate is inner).

The principle of operation of field-effect transistors is based on the movement of the main carriers of an electric charge of one type (electrons or holes), in contrast to bipolar transistors, which have two types of charge carriers.

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