Field effect transistors (FETs, MOSFETs)

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Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)
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Yerevan
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2N7002,215, Transistor, N-channel, 60V, 0.3A [SOT-23]
5989 pcs.
Brand: Nexperia
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 5 Ohm / 0.5A, 10V
Maximum power dissipation Psi max..W: 0.83
Housing: SOT-23-3
quick view
5989 pcs.
15 ֏ ×
from 100 pcs. — 12 ֏
2N7002K, N-MOSFET Transistor 60V 0.34A 0.15W 0.9Ohm [SOT-23-3.] (2N7002K-T1-GE3)
7035 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 2 Ohm / 0.5A, 10V
Maximum power dissipation Psi max..W: 0.35
Housing: SOT-23-3
quick view
7035 pcs.
13 ֏ ×
from 100 pcs. — 11 ֏
2N7002K-T1-GE3, N-CH Si 60V 0.3A 3-Pin Transistor [SOT-23]
2736 pcs.
Brand: Vishay
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 2 Ohm / 0.5A, 10V
Maximum power dissipation Psi max..W: 0.35
Housing: SOT-23-3
quick view
2736 pcs.
79 ֏
33 ֏
×
from 100 pcs. — 28 ֏
2SK3878(STA1,E,S), N-MOSFET Transistor 900V 9A 150W [SC-65 / 2- 16C1B.]
402 pcs.
Brand: Toshiba
Structure: N-channel
Maximum drain-source voltage Usi, V: 900
Maximum drain-source current at 25 C Isi max..A: 9
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 1.3 Ohm / 4A, 10V
Maximum power dissipation Psi max..W: 150
Slope of characteristic, S: 7
Housing: SC-65/2-16C1B
quick view
402 pcs.
2 210 ֏ ×
AO3400A, N-MOSFET Transistor 30V 5.8A 1.4W 0.028Ohm [SOT-23-3.]
312 pcs.
Brand: Alpha & Omega
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 5.8
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0265 Ohm / 5.7A, 10V
Maximum power dissipation Psi max..W: 1.4
Slope of characteristic, S: 33
Housing: SOT-23-3
quick view
312 pcs.
60 ֏ ×
from 40 pcs. — 53 ֏
AO3401A, P-MOSFET Transistor 30V 4A [SOT-23-3.]
2240 pcs.
Brand: Alpha & Omega
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 4
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.044 Ohm / 4.3A, 10V
Maximum power dissipation Psi max..W: 1.4
Slope of characteristic, S: 17
Housing: SOT-23-3
quick view
2240 pcs.
38 ֏ ×
from 100 pcs. — 35 ֏
AO3407A, 30V P-MOSFET Transistor 4.3A [SOT-23-3.]
3091 pcs.
Brand: Alpha & Omega
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 4.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.048 Ohm / 4.3A, 10V
Maximum power dissipation Psi max..W: 1.4
Slope of characteristic, S: 10
Housing: SOT-23-3
quick view
3091 pcs.
58 ֏ ×
from 50 pcs. — 53 ֏
AO4407AL, 30V 12A P-MOSFET Transistor [SOIC-8.]
1331 pcs.
Brand: Alpha & Omega
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 12
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.011 Ohm / 12A, 20V
Maximum power dissipation Psi max..W: 3.1
Slope of characteristic, S: 21
Housing: SOIC-8
quick view
1331 pcs.
730 ֏
236 ֏
×
from 15 pcs. — 220 ֏
AO4606, N/P-MOSFET Transistor 30V 6/6.5A 2W 0.03/0.028Ohm [SOIC-8 / SOP-8.]
236 pcs.
Brand: Alpha & Omega
Structure: N / P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 6.9/6
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.03 Ohm / 6A, 10V / 0.028 Ohm / 6.5A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 15/18
Housing: SOIC-8
quick view
236 pcs.
540 ֏
167 ֏
×
from 15 pcs. — 158 ֏
AON6414AL, MOSFET Transistor N-channel 30V [DFN-8 (5x6).]
41 pcs.
Brand: Alpha & Omega
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 13
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.008 ohm/20A, 10V
Maximum power dissipation Psi max..W: 2.3
Housing: DFN-8(5X6)
quick view
41 pcs.
387 ֏ ×
from 10 pcs. — 358 ֏
AON6512, MOSFET, N-channel, 30 V, 54 A, [DFN-8 5X6 EP.]
101 pcs.
Brand: Alpha & Omega
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 54
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0017 Ohm / 20A, 10V
Maximum power dissipation Psi max..W: 7.4
Slope of characteristic, S: 85
Housing: DFN-8(5X6)
quick view
101 pcs.
298 ֏ ×
from 10 pcs. — 277 ֏
AP4525GEH, Transistor, N + P-channel, 40V, 15 / -12A, 28 / 42mOhm [TO-252-4L]
3078 pcs.
Brand: Advanced Power
Structure: N / P channels
Maximum drain-source voltage Usi, V: 40
Maximum drain-source current at 25 C Isi max..A: 15/12
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.028 Ohm / 15A, 10V / 0.042 Ohm / 12A, 10V
Maximum power dissipation Psi max..W: 10.4
Slope of characteristic, S: 6/5
Housing: DPAK-5(4 Leads+Tab)
quick view
3078 pcs.
730 ֏
444 ֏
×
from 15 pcs. — 410 ֏
AUIRLR2905Z, Transistor, Auto Q101 Nkan 55V 60A [D-PAK]
671 pcs.
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 55
Maximum drain-source current at 25 C Isi max..A: 60
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.027 Ohm / 25A, 10V
Maximum power dissipation Psi max..W: 110
Slope of characteristic, S: 21
Housing: DPAK(2 Leads+Tab)
quick view
671 pcs.
1 940 ֏
1 100 ֏
×
from 15 pcs. — 930 ֏
BF998E6327HTSA1, 2N Channel Transistor, RF Radio Circuits [SOT-143]
1401 pcs.
Brand: Infineon
Structure: 2N channels
Maximum drain-source voltage Usi, V: 12
Maximum drain-source current at 25 C Isi max..A: 0.03
Housing: SOT-143
quick view
1401 pcs.
105 ֏ ×
from 50 pcs. — 86 ֏
BS170, Transistor, N-channel, 60V, 0.5A [TO-92]
6011 pcs.
Brand: ON Semiconductor
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 5 Ohm / 0.2A, 10V
Maximum power dissipation Psi max..W: 0.83
Slope of characteristic, S: 0.32
Housing: TO-92
quick view
6011 pcs.
140 ֏
105 ֏
×
from 100 pcs. — 91 ֏
BSC350N20NSFDATMA1, MOSFET N-channel 200V 35A [TDSON-8 EP]
454 pcs.
Brand: Infineon
Structure: N-channel
Maximum drain-source voltage Usi, V: 200
Maximum drain-source current at 25 C Isi max..A: 35
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.035 ohm/35A, 10V
Maximum power dissipation Psi max..W: 150
Housing: PG-TDSON-8
quick view
454 pcs.
1 460 ֏
1 330 ֏
×
from 15 pcs. — 1 310 ֏
BSH201,215, 60V 0.3A 0.417W 2.5Ohm P-MOSFET Transistor [SOT-23-3.]
1902 pcs.
Brand: Nexperia
Structure: P-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 2.5 Ohm / 0.16A, 10V
Maximum power dissipation Psi max..W: 0.417
Slope of characteristic, S: 0.35
Housing: SOT-23-3
quick view
1902 pcs.
141 ֏ ×
from 15 pcs. — 129 ֏
BSS138, N-MOSFET Transistor 50V 0.22A 0.35W 1.6Ohm [SOT-23-3.] (=BSS138LT1G, BSS138-7-F)
12365 pcs.
Brand: Hottech
Structure: N-channel
Maximum drain-source voltage Usi, V: 50
Maximum drain-source current at 25 C Isi max..A: 0.22
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 3.5 Ohm / 0.22A, 10V
Maximum power dissipation Psi max..W: 0.36
Slope of characteristic, S: 0.1
Housing: SOT-23-3
quick view
12365 pcs.
31 ֏
11 ֏
×
from 100 pcs. — 10 ֏
BSS84,215, Transistor, P-channel, 50V 130mA [SOT-23]
379 pcs.
Brand: Nexperia
Structure: P-channel
Maximum drain-source voltage Usi, V: 50
Maximum drain-source current at 25 C Isi max..A: 0.13
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 10 Ohm / 0.1A, 5V
Maximum power dissipation Psi max..W: 0.36
Slope of characteristic, S: 270
Housing: SOT-23-3
quick view
379 pcs.
116 ֏
62 ֏
×
from 100 pcs. — 52 ֏
quick view
2285 pcs.
258 ֏ ×
from 50 pcs. — 248 ֏
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Field effect transistors are semiconductor devices through which flows of electric charge carriers flow. These flows are regulated by a transverse electric field created by a voltage applied between drain and gate or source and gate (drain and source are outer layers of semiconductors, gate is inner).

The principle of operation of field-effect transistors is based on the movement of the main carriers of an electric charge of one type (electrons or holes), in contrast to bipolar transistors, which have two types of charge carriers.

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