Field effect transistors (FETs, MOSFETs) Hottech

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2N7002K, N-MOSFET Transistor 60V 0.34A 0.15W 0.9Ohm [SOT-23-3.] (2N7002K-T1-GE3)
6704 pcs.
Brand: Hottech
Structure: N-Channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 2 Ohm / 0.5A, 10V
Maximum power dissipation Psi max..W: 0.15
Housing: SOT-23-3
quick view
6704 pcs.
13 ֏ ×
from 100 pcs. — 11 ֏
BSS138, N-MOSFET Transistor 50V 0.22A 0.35W 1.6Ohm [SOT-23-3.] (=BSS138LT1G, BSS138-7-F)
10438 pcs.
Brand: Hottech
Structure: N-Channel
Maximum drain-source voltage Usi, V: 50
Maximum drain-source current at 25 C Isi max..A: 0.22
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 3.5 Ohm / 0.22A, 10V
Maximum power dissipation Psi max..W: 0.35
Slope of characteristic, S: 0.1
Housing: SOT-23-3
quick view
10438 pcs.
31 ֏
11 ֏
×
from 100 pcs. — 10 ֏
IRLML0060TRPBF, N-MOSFET Transistor 60V 2.7A 1.25W 0.092ohms [SOT-23-3.]
6540 pcs.
Brand: Hottech
Structure: N-Channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 2.7
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.092 Ohm / 2.7A, 10V
Maximum power dissipation Psi max..W: 1.25
Housing: Micro-3/SOT-23-3
quick view
6540 pcs.
79 ֏
55 ֏
×
from 100 pcs. — 50 ֏
IRLML2402TRPBF, N-MOSFET Transistor 16V 1.2A 0.54W 0.25Ohm [SOT-23-3.]
1665 pcs.
Brand: Hottech
Structure: N-Channel
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 1.2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.25 Ohm / 0.93A, 4.5V
Maximum power dissipation Psi max..W: 0.54
Slope of characteristic, S: 1.3
Housing: Micro-3/SOT-23-3
quick view
1665 pcs.
110 ֏
46 ֏
×
from 100 pcs. — 40 ֏
IRLML6402TRPBF, 20V 3.7A 1.3W 0.065Ohm P-MOSFET Transistor [SOT-23-3.]
12337 pcs.
Brand: Hottech
Structure: P-Channel
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 3.78
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.065 Ohm / 3.7A, 4.5V
Maximum power dissipation Psi max..W: 1.3
Slope of characteristic, S: 6
Housing: Micro-3/SOT-23-3
quick view
12337 pcs.
24 ֏ ×
from 100 pcs. — 22 ֏
IRLML9301TRPBF, P-MOSFET 30V 3.6A 1.3W 0.064Ohm Transistor [SOT-23-3.]
14541 pcs.
Brand: Hottech
Structure: P-Channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 3.6
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.051 ohm/3.6A/10V
Maximum power dissipation Psi max..W: 1.3
Slope of characteristic, S: 3.5
Housing: SOT-23-3
quick view
14541 pcs.
134 ֏
60 ֏
×
from 100 pcs. — 50 ֏
2N7002DW, Transistor 2N-MOSFET 60V 0.3A 0.15W 1.9Ohm [SOT-363]
11 days, 10970 pcs.
Brand: Hottech
Structure: MOSFET
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 1.9Ohms
Maximum power dissipation Psi max..W: 0.15
Housing: SOT-363
quick view
11 days,
10970 pcs.
12 ֏ ×
from 100 pcs. — 9 ֏
5N10, N-MOSFET Transistor 100V 5A 0.115Ohms [SOT-23-3.]
11 days, 5502 pcs.
Brand: Hottech
Structure: MOSFET
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.115ohm
Housing: SOT-23-3
quick view
11 days,
5502 pcs.
25 ֏ ×
from 100 pcs. — 19 ֏
AO3400, N-MOSFET Transistor 30V 5.8A 1.4W 0.028Ohm [SOT-23-3.]
11 days, 12511 pcs.
Brand: Hottech
Structure: MOSFET
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 5.8
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.028ohm
Maximum power dissipation Psi max..W: 1.4
Slope of characteristic, S: 10 S
Housing: SOT-23-3
quick view
11 days,
12511 pcs.
14 ֏ ×
from 100 pcs. — 11 ֏
AO3401, P-MOSFET Transistor 30V 4A 1.4W 0.05Ohm [SOT-23-3.]
11 days, 1708 pcs.
Brand: Hottech
Structure: MOSFET
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 4
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.05ohm
Maximum power dissipation Psi max..W: 1.4
Slope of characteristic, S: 10 S
Housing: SOT-23-3
quick view
11 days,
1708 pcs.
13 ֏ ×
from 100 pcs. — 10 ֏
AO3407, P-MOSFET Transistor 30V 4.1A 1.4W 0.052Ohm [SOT-23-3.]
11 days, 5169 pcs.
Brand: Hottech
Structure: MOSFET
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 4.1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.052ohm
Maximum power dissipation Psi max..W: 1.4
Housing: SOT-23-3
quick view
11 days,
5169 pcs.
15 ֏ ×
from 100 pcs. — 11 ֏
QQ150N03, Transistor, N-MOSFET, 30V, 150A, 75W, 0.0038Ohms [PDFN-8_3.3x3.3.]
11 days, 177 pcs.
Brand: Hottech
Structure: N-Channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 150
Housing: PDFN3333
quick view
11 days,
177 pcs.
69 ֏ ×
from 30 pcs. — 65 ֏
QQ30P03, Transistor, P-MOSFET, 30V, 60A, 32W, 0.0074Ohms [PDFN-8_3.3x3.3.]
11 days, 1485 pcs.
Brand: Hottech
Structure: MOSFET
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 60
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0074ohm
Maximum power dissipation Psi max..W: 32
Housing: PDFN3*3-8l
quick view
11 days,
1485 pcs.
67 ֏ ×
from 50 pcs. — 60 ֏
IRLML0030TRPBF, N-MOSFET Transistor 30V 5.3A 1.3W 0.027Ohm [SOT-23-3.]
11 days, 7873 pcs.
Brand: Hottech
Structure: N-Channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 5.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.027 Ohm / 5.2A, 10V
Maximum power dissipation Psi max..W: 1.3
Slope of characteristic, S: 9.5
Housing: SOT-23-3
quick view
11 days,
7873 pcs.
70 ֏ ×
from 100 pcs. — 60 ֏
IRLML0040TRPBF, N-MOSFET 40V 3.6A 1.3W 0.056Ohm Transistor [SOT-23-3.]
11 days, 9485 pcs.
Brand: Hottech
Structure: N-Channel
Maximum drain-source voltage Usi, V: 40
Maximum drain-source current at 25 C Isi max..A: 3.6
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.056 Ohm / 3.6A, 10V
Maximum power dissipation Psi max..W: 1.3
Housing: Micro-3/SOT-23-3
quick view
11 days,
9485 pcs.
122 ֏
52 ֏
×
from 100 pcs. — 45 ֏
IRLML0100TRPBF, N-MOSFET Transistor 100V 1.6A 1.3W 0.22Ohm [SOT-23-3.]
11 days, 6419 pcs.
Brand: Hottech
Structure: N-Channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 1.6
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.22 Ohm / 1.6A, 10V
Maximum power dissipation Psi max..W: 1.3
Slope of characteristic, S: 5.7
Housing: SOT-23-3
quick view
11 days,
6419 pcs.
72 ֏ ×
from 100 pcs. — 65 ֏
IRLML2030TRPBF, N-MOSFET Transistor 30V 4.3A 1.25W 0.032Ohm [SOT-23-3.]
11 days, 1839 pcs.
Brand: Hottech
Structure: MOSFET
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 4.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.032Ohms
Maximum power dissipation Psi max..W: 1.25
Slope of characteristic, S: 2.6
Housing: SOT-23-3
quick view
11 days,
1839 pcs.
27 ֏ ×
from 100 pcs. — 20 ֏
IRLML2060TRPBF, N-MOSFET Transistor 60V 3A 1.25W 0.082Ohm [SOT-23-3]
11 days, 2514 pcs.
Brand: Hottech
Structure: MOSFET
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.082ohm
Maximum power dissipation Psi max..W: 1.25
Slope of characteristic, S: 1.6
Housing: SOT-23-3
quick view
11 days,
2514 pcs.
31 ֏ ×
from 100 pcs. — 24 ֏
IRLML2244TRPBF, N-MOSFET Transistor 30V 3.18A 0.89W 0.059Ohm [SOT-23-3]
11 days, 5328 pcs.
Brand: Hottech
Structure: MOSFET
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 3.18
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.059Ohms
Maximum power dissipation Psi max..W: 0.89
Slope of characteristic, S: 6.5
Housing: SOT-23-3
quick view
11 days,
5328 pcs.
17 ֏ ×
from 100 pcs. — 13 ֏
IRLML2246TRPBF, 20V 2.6A 1.3W 0.135Ohm P-MOSFET Transistor [SOT-23-3.]
11 days, 8967 pcs.
Brand: Hottech
Structure: P-Channel
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 2.6
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.135 Ohm / 2.6A, 4.5V
Maximum power dissipation Psi max..W: 1.3
Slope of characteristic, S: 3.4
Housing: SOT-23-3
quick view
11 days,
8967 pcs.
57 ֏ ×
from 100 pcs. — 50 ֏
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