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Field effect transistors (FETs, MOSFETs) MCC

106 of over 1000
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Maximum drain-source voltage Usi, V
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Maximum drain-source current at 25 C Isi max..A
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Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)
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Maximum power dissipation Psi max..W
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2N7002DW-TP, Transistor 2N-MOSFET 60V 0.115A 0.15W 7OHM [SOT-363.]
9 days, 692 pcs.
Brand: MCC
Structure: 2 N-Channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.115
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 7.5 ohm/0.05A, 5V
Maximum power dissipation Psi max..W: 0.15
Housing: SOT-363
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9 days,
692 pcs.
 67 ֏ ×
from 50 pcs. — 60 ֏
2N7002-TP, MOSFET N-channel 60V 0.115A [SOT-23]
10 days, 2353 pcs.
Brand: MCC
Structure: N-Channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.115
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 7.5 Ohm / 0.5A, 10V
Maximum power dissipation Psi max..W: 0.2
Housing: SOT-23-3
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10 days,
2353 pcs.
110 ֏
72 ֏
×
from 100 pcs. — 55 ֏
BSS138W-TP, Enhancement Mode FET Transistor, N-channel, 50V, 0.22A [SOT-323]
9 days, 1163 pcs.
Brand: MCC
Structure: N-Channel
Maximum drain-source voltage Usi, V: 50
Maximum drain-source current at 25 C Isi max..A: 0.22
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 3.5 Ohm / 0.22A, 10V
Maximum power dissipation Psi max..W: 138
Housing: sot-323
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9 days,
1163 pcs.
104 ֏
48 ֏
×
from 100 pcs. — 35 ֏
MCG30P03-TP, MOSFET
9 days, 8 pcs.
Brand: MCC
Structure: MOSFET
Maximum power dissipation Psi max..W: 32
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9 days,
8 pcs.
 199 ֏ ×
MCQ4435-TP, MOSFETs P-CHANNEL MOSFET
9 days, 1 pcs.
Brand: MCC
Structure: P-Channel
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9 days,
1 pcs.
 520 ֏ ×
from 5 pcs. — 472 ֏
MCQ9435-TP
9 days, 1 pcs.
Brand: MCC
Maximum power dissipation Psi max..W: 1.4
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9 days,
1 pcs.
1 220 ֏
630 ֏
×
from 5 pcs. — 580 ֏
2SK3018-TP, Transistor: N-MOSFET; field; 30V; 0.1A; 0.2W; SOT323
10 days, 91 pcs.
Brand: MCC
Structure: MOSFET
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 0.1
Maximum power dissipation Psi max..W: 0.2
Slope of characteristic, S: 350 mS
Housing: sot323
 quick view
10 days,
91 pcs.
 234 ֏ ×
from 10 pcs. — 144 ֏
BSS138-TP, N-MOSFET Transistor, field effect, 50V, 0.22A, 0.32W, SOT23
10 days, 2 pcs.
Brand: MCC
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10 days,
2 pcs.
 134 ֏ ×
SI2302-TP, 20V 3A 1.25W 72mOhm@4.5V,3.6A 1.2V@50uA N Channel SOT-23 MOSFETs
10 days, 10 pcs.
Brand: MCC
Structure: N-Channel
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 72M
Maximum power dissipation Psi max..W: 1.25
Housing: sot-23
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10 days,
10 pcs.
 105 ֏ ×
SI2307-TP, Transistor: P-MOSFET; Trench; field; -30V; -2.7A; Idm: -12A; 1.1W
10 days, 38 pcs.
Brand: MCC
Structure: N-Channel
Maximum drain-source voltage Usi, V: 1.1
Maximum drain-source current at 25 C Isi max..A: 2.7
Maximum power dissipation Psi max..W: 1.1
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10 days,
38 pcs.
 308 ֏ ×
from 10 pcs. — 234 ֏
SI2310-TP
10 days, 1324 pcs.
Brand: MCC
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10 days,
1324 pcs.
35 ֏
25 ֏
×
from 1000 pcs. — 21 ֏
SI3401A-TP, Transistor: P-MOSFET; Trench; Field effect; -30V; -4.2A; Idm: -30A; 1.3W
10 days, 110 pcs.
Brand: MCC
Structure: N-Channel
Maximum drain-source voltage Usi, V: 1.3
Maximum drain-source current at 25 C Isi max..A: 4.2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 60mOhm@10V, 4.2A
Maximum power dissipation Psi max..W: 1.3
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10 days,
110 pcs.
 40 ֏ ×
from 10 pcs. — 35 ֏
from 100 pcs. — 30 ֏
SI3407-TP
10 days, 3000 pcs.
Brand: MCC
Housing: to236
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10 days,
3000 pcs.
30 ֏
25 ֏
×
from 1000 pcs. — 23 ֏
2N7002-TP
2-3 weeks, 30723 pcs.
Brand: MCC
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.115
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 7.5 Ohm / 0.5A, 10V
Maximum power dissipation Psi max..W: 0.2
Slope of characteristic, S: -
Housing: sot-23
 quick view
2-3 weeks,
30723 pcs.
 125 ֏ ×
from 939 pcs. — 90 ֏
from 1877 pcs. — 55 ֏
MCU80N06
2-3 weeks, 177 pcs.
Brand: MCC
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2-3 weeks,
177 pcs.
 1 250 ֏ ×
from 2 pcs. — 1 000 ֏
from 5 pcs. — 790 ֏
from 10 pcs. — 710 ֏
2N7002KA-TP, 60V 340mA 5Ohm@10V,500mA 350mW 1.4V@250uA 8pF@25V N Channel 35pF@25V -55°C~+150°C@(Tj) SOT-23-3 MOSFETs
5-6 weeks, 420 pcs.
Brand: MCC
Structure: N-Channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.34
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 5Ohm@10V, 500mA
Maximum power dissipation Psi max..W: 0.35
Housing: SOT-23-3
 quick view
5-6 weeks,
420 pcs.
 95 ֏ ×
from 100 pcs. — 65 ֏
from 300 pcs. — 55 ֏
2N7002KA-TP, MOSFETs N-Ch 60Vds 20Vgs 340mA 350mW 30nC
7-8 weeks, 5231 pcs.
Brand: MCC
Structure: N-Channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.34
Maximum power dissipation Psi max..W: 0.35
 quick view
7-8 weeks,
5231 pcs.
 298 ֏ ×
from 10 pcs. — 174 ֏
from 100 pcs. — 100 ֏
from 500 pcs. — 68 ֏
2N7002KA-TP, Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-23 T/R
8 weeks, 24000 pcs.
Brand: MCC
Structure: N-Channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.34
Maximum power dissipation Psi max..W: 0.35
Housing: sot-23
 quick view
8 weeks,
24000 pcs.
 40 ֏ ×
from 9000 pcs. — 34 ֏
2N7002K-TP, MOSFETs 350mW, 60V, 340mA
7-8 weeks, 1388 pcs.
Brand: MCC
Structure: MOSFET
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.34
Maximum power dissipation Psi max..W: 0.35
Slope of characteristic, S: -
 quick view
7-8 weeks,
1388 pcs.
 298 ֏ ×
from 10 pcs. — 174 ֏
from 100 pcs. — 100 ֏
from 500 pcs. — 68 ֏
2N7002K-TP, Transistor: N-MOSFET
5-6 weeks, 5980 pcs.
Brand: MCC
Structure: MOSFET
Maximum drain-source voltage Usi, V: 60
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 5Ohm@10V, 500mA
Maximum power dissipation Psi max..W: 0.35
Slope of characteristic, S: -
 quick view
5-6 weeks,
5980 pcs.
 85 ֏ ×
from 200 pcs. — 65 ֏
from 600 pcs. — 60 ֏
from 3000 pcs. — 54 ֏
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