Field effect transistors (FETs, MOSFETs) UMW

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Maximum drain-source voltage Usi, V
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Maximum drain-source current at 25 C Isi max..A
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Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)
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Maximum power dissipation Psi max..W
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Slope of characteristic, S
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100N03A, N-MOSFET Transistor 30V 90A 105W 0.0038Ohm [DPAK /TO-252.]
9 days, 12238 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 90
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 3.8 mOhm/30A, 10V
Maximum power dissipation Psi max..W: 105
Housing: dpak
quick view
9 days,
12238 pcs.
98 ֏ ×
from 50 pcs. — 86 ֏
10N65F, 650V 10A 32.1W 0.75Ohm N-MOSFET Transistor [TO-220F.]
9 days, 3418 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 650
Maximum drain-source current at 25 C Isi max..A: 1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.75 Ohm / 5A, 10V
Housing: TO-220F
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9 days,
3418 pcs.
234 ֏ ×
from 50 pcs. — 205 ֏
12N10, N-MOSFET Transistor 100V 15A 96W 0.114Ohm [DPAK /TO-252.]
9 days, 3212 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 15
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 114 mOhm/3A, 10V
Maximum power dissipation Psi max..W: 96
Slope of characteristic, S: 35
Housing: dpak
quick view
9 days,
3212 pcs.
82 ֏ ×
from 100 pcs. — 72 ֏
15N10, N-MOSFET Transistor 100V 15A 55W 0.095Ohm [DPAK /TO-252.]
9 days, 3200 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 15
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 95 mOhm/10A, 10V
Maximum power dissipation Psi max..W: 55
Slope of characteristic, S: 2
Housing: dpak
quick view
9 days,
3200 pcs.
98 ֏ ×
from 50 pcs. — 86 ֏
1N60G, N-MOSFET Transistor 600V 1A 8W 8.5Ohm [SOT-223.]
9 days, 3701 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 8.5 ohm/0.5A, 10V
Slope of characteristic, S: 0.5
Housing: SOT-223
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9 days,
3701 pcs.
53 ֏ ×
from 50 pcs. — 48 ֏
1N60L, 600V 1A N-MOSFET Transistor [TO-252.]
9 days, 2448 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 8.5 ohm/0.5A, 10V
Slope of characteristic, S: 0.5
Housing: dpak
quick view
9 days,
2448 pcs.
67 ֏ ×
from 50 pcs. — 58 ֏
1N65G, Transistor N-MOSFET 650V 1A [SOT-223]
9 days, 1931 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 650
Maximum drain-source current at 25 C Isi max..A: 1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 8.5 ohm/0.5A, 10V
Slope of characteristic, S: 0.5
Housing: SOT-223
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9 days,
1931 pcs.
65 ֏ ×
from 50 pcs. — 58 ֏
1N65L, 650V 1A N-MOSFET Transistor [TO-252.]
9 days, 1108 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 650
Maximum drain-source current at 25 C Isi max..A: 1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 8.5 ohm/0.5A, 10V
Slope of characteristic, S: 0.5
Housing: dpak
quick view
9 days,
1108 pcs.
67 ֏ ×
from 50 pcs. — 58 ֏
20N06, N-MOSFET Transistor 60V 20A [TO-252.]
9 days, 3623 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 23 mOhm/15A, 10V
Maximum power dissipation Psi max..W: 55
Housing: dpak
quick view
9 days,
3623 pcs.
77 ֏ ×
from 50 pcs. — 67 ֏
25N06, N-MOSFET Transistor 60V 25A [TO-252.]
9 days, 1488 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 25
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 23 mOhm/19A, 10V
Maximum power dissipation Psi max..W: 36.2
Housing: dpak
quick view
9 days,
1488 pcs.
93 ֏ ×
from 50 pcs. — 82 ֏
2N60G, N-MOSFET 600V 2A Transistor [SOT-223.]
9 days, 3414 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 4.2 ohm/1A, 10V
Slope of characteristic, S: 1.5
Housing: SOT-223
quick view
9 days,
3414 pcs.
70 ֏ ×
from 50 pcs. — 58 ֏
2N60L, N-MOSFET Transistor 600V 2A 8W [TO-252.]
9 days, 4155 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 4.2 ohm/1A, 10V
Slope of characteristic, S: 1.5
Housing: dpak
quick view
9 days,
4155 pcs.
72 ֏ ×
from 50 pcs. — 62 ֏
2N65G, 650V 2A N-MOSFET Transistor [SOT-223.]
9 days, 2542 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 650
Maximum drain-source current at 25 C Isi max..A: 2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 4.5 ohm/1A, 10V
Slope of characteristic, S: 1.5
Housing: SOT-223
quick view
9 days,
2542 pcs.
65 ֏ ×
from 50 pcs. — 58 ֏
2N65L, 650V 2A N-MOSFET Transistor [TO-252.]
9 days, 494 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 650
Maximum drain-source current at 25 C Isi max..A: 2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 4.5 ohm/1A, 10V
Slope of characteristic, S: 1.5
Housing: dpak
quick view
9 days,
494 pcs.
77 ֏ ×
from 50 pcs. — 72 ֏
2N7002, N-MOSFET Transistor 60V 115mA [SOT-23-3.]
9 days, 21948 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.115
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 5 Ohms/0.1A, 10V
Maximum power dissipation Psi max..W: 0.225
Housing: SOT-23-3
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9 days,
21948 pcs.
13 ֏ ×
from 100 pcs. — 9 ֏
2N7002B, N-MOSFET Transistor 60V 115mA [SOT-23-3.]
9 days, 7006 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.115
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 5 Ohm / 0.5A, 10V
Maximum power dissipation Psi max..W: 0.225
Housing: SOT-23-3
quick view
9 days,
7006 pcs.
10 ֏ ×
from 100 pcs. — 8 ֏
30N03A, Transistor N-MOSFET 30V 90A [TO-252]
9 days, 3256 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 90
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 3.9 mOhm/15A, 10V
Maximum power dissipation Psi max..W: 105
Housing: dpak
quick view
9 days,
3256 pcs.
89 ֏ ×
from 100 pcs. — 77 ֏
30N06, Transistor N-MOSFET 60V 30A [TO-252]
9 days, 3753 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 30
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 23 mOhm/15A, 10V
Maximum power dissipation Psi max..W: 55
Housing: dpak
quick view
9 days,
3753 pcs.
84 ֏ ×
from 50 pcs. — 72 ֏
30P03D, P-MOSFET Transistor 30V 9A 37W 0.02Ohm [PDFN-8_3x3.]
9 days, 3722 pcs.
Brand: UMW
Structure: P-channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 9
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 20 mOhm/15A, 4.5V
Maximum power dissipation Psi max..W: 37
Slope of characteristic, S: 30
Housing: PDFN-8_3x3
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9 days,
3722 pcs.
60 ֏ ×
from 40 pcs. — 58 ֏
35N06, Transistor N-MOSFET 60V 35A [TO-252]
9 days, 905 pcs.
Brand: UMW
Structure: N-channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 35
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 23 mOhm/19A, 10V
Maximum power dissipation Psi max..W: 36.2
Housing: dpak
quick view
9 days,
905 pcs.
115 ֏ ×
from 50 pcs. — 105 ֏
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