Field effect transistors (FETs, MOSFETs) UMW

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Maximum drain-source voltage Usi, V
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Maximum drain-source current at 25 C Isi max..A
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Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)
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Maximum power dissipation Psi max..W
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Slope of characteristic, S
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100N03A, N-MOSFET Transistor 30V 90A 105W 0.0038Ohm [DPAK /TO-252.]
7 days, 11789 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 90
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 3.8 mOhm/30A, 10V
Maximum power dissipation Psi max..W: 105
Housing: dpak
quick view
7 days,
11789 pcs.
102 ֏ ×
from 50 pcs. — 90 ֏
10N65F, 650V 10A 32.1W 0.75Ohm N-MOSFET Transistor [TO-220F.]
7 days, 3061 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 650
Maximum drain-source current at 25 C Isi max..A: 1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.75 Ohm / 5A, 10V
Maximum power dissipation Psi max..W: 32.1
Housing: TO-220F
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7 days,
3061 pcs.
243 ֏ ×
from 50 pcs. — 213 ֏
12N10, N-MOSFET Transistor 100V 15A 96W 0.114Ohm [DPAK /TO-252.]
7 days, 2940 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 15
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 114 mOhm/3A, 10V
Maximum power dissipation Psi max..W: 96
Slope of characteristic, S: 35
Housing: dpak
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7 days,
2940 pcs.
85 ֏ ×
from 100 pcs. — 75 ֏
15N10, N-MOSFET Transistor 100V 15A 55W 0.095Ohm [DPAK /TO-252.]
7 days, 2910 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 100
Maximum drain-source current at 25 C Isi max..A: 15
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 95 mOhm/10A, 10V
Maximum power dissipation Psi max..W: 55
Slope of characteristic, S: 2
Housing: dpak
quick view
7 days,
2910 pcs.
102 ֏ ×
from 50 pcs. — 90 ֏
1N60G, N-MOSFET Transistor 600V 1A 8W 8.5Ohm [SOT-223.]
7 days, 3626 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 8.5 ohm/0.5A, 10V
Maximum power dissipation Psi max..W: 8
Slope of characteristic, S: 0.5
Housing: SOT-223
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7 days,
3626 pcs.
55 ֏ ×
from 50 pcs. — 50 ֏
1N60L, 600V 1A N-MOSFET Transistor [TO-252.]
7 days, 2436 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 8.5 ohm/0.5A, 10V
Maximum power dissipation Psi max..W: 1
Slope of characteristic, S: 0.5
Housing: dpak
quick view
7 days,
2436 pcs.
70 ֏ ×
from 50 pcs. — 60 ֏
1N65G, Transistor N-MOSFET 650V 1A [SOT-223]
7 days, 1925 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 650
Maximum drain-source current at 25 C Isi max..A: 1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 8.5 ohm/0.5A, 10V
Slope of characteristic, S: 0.5
Housing: SOT-223
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7 days,
1925 pcs.
67 ֏ ×
from 50 pcs. — 60 ֏
1N65L, 650V 1A N-MOSFET Transistor [TO-252.]
7 days, 1105 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 650
Maximum drain-source current at 25 C Isi max..A: 1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 8.5 ohm/0.5A, 10V
Maximum power dissipation Psi max..W: 140
Slope of characteristic, S: 0.5
Housing: dpak
quick view
7 days,
1105 pcs.
70 ֏ ×
from 50 pcs. — 60 ֏
20N06, N-MOSFET Transistor 60V 20A [TO-252.]
7 days, 3233 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 23 mOhm/15A, 10V
Maximum power dissipation Psi max..W: 55
Housing: dpak
quick view
7 days,
3233 pcs.
80 ֏ ×
from 50 pcs. — 70 ֏
25N06, N-MOSFET Transistor 60V 25A [TO-252.]
7 days, 1403 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 25
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 23 mOhm/19A, 10V
Maximum power dissipation Psi max..W: 36.2
Housing: dpak
quick view
7 days,
1403 pcs.
97 ֏ ×
from 50 pcs. — 85 ֏
2N60G, N-MOSFET 600V 2A Transistor [SOT-223.]
7 days, 2896 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 4.2 ohm/1A, 10V
Maximum power dissipation Psi max..W: 8
Slope of characteristic, S: 1.5
Housing: SOT-223
quick view
7 days,
2896 pcs.
72 ֏ ×
from 50 pcs. — 60 ֏
2N60L, N-MOSFET Transistor 600V 2A 8W [TO-252.]
7 days, 4007 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 600
Maximum drain-source current at 25 C Isi max..A: 2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 4.2 ohm/1A, 10V
Maximum power dissipation Psi max..W: 8
Slope of characteristic, S: 1.5
Housing: dpak
quick view
7 days,
4007 pcs.
75 ֏ ×
from 50 pcs. — 65 ֏
2N65G, 650V 2A N-MOSFET Transistor [SOT-223.]
7 days, 2517 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 650
Maximum drain-source current at 25 C Isi max..A: 2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 4.5 ohm/1A, 10V
Slope of characteristic, S: 1.5
Housing: SOT-223
quick view
7 days,
2517 pcs.
67 ֏ ×
from 50 pcs. — 60 ֏
2N65L, 650V 2A N-MOSFET Transistor [TO-252.]
7 days, 459 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 650
Maximum drain-source current at 25 C Isi max..A: 2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 4.5 ohm/1A, 10V
Slope of characteristic, S: 1.5
Housing: dpak
quick view
7 days,
459 pcs.
80 ֏ ×
from 50 pcs. — 75 ֏
2N7002, N-MOSFET Transistor 60V 115mA [SOT-23-3.]
7 days, 18347 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.115
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 5 Ohms/0.1A, 10V
Maximum power dissipation Psi max..W: 0.35
Housing: SOT-23-3
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7 days,
18347 pcs.
13 ֏ ×
from 100 pcs. — 9 ֏
2N7002B, N-MOSFET Transistor 60V 115mA [SOT-23-3.]
7 days, 6982 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 0.115
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 5 Ohm / 0.5A, 10V
Maximum power dissipation Psi max..W: 0.225
Housing: SOT-23-3
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7 days,
6982 pcs.
10 ֏ ×
from 100 pcs. — 8 ֏
30N03A, Transistor N-MOSFET 30V 90A [TO-252]
7 days, 145 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 90
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 3.9 mOhm/15A, 10V
Maximum power dissipation Psi max..W: 105
Housing: dpak
quick view
7 days,
145 pcs.
92 ֏ ×
from 100 pcs. — 80 ֏
30N06, Transistor N-MOSFET 60V 30A [TO-252]
7 days, 3706 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 30
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 23 mOhm/15A, 10V
Maximum power dissipation Psi max..W: 55
Housing: dpak
quick view
7 days,
3706 pcs.
87 ֏ ×
from 50 pcs. — 75 ֏
30P03D, P-MOSFET Transistor 30V 9A 37W 0.02Ohm [PDFN-8_3x3.]
7 days, 3539 pcs.
Brand: UMW
Structure: P-Channel
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 9
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 20 mOhm/15A, 4.5V
Maximum power dissipation Psi max..W: 37
Slope of characteristic, S: 30
Housing: PDFN-8_3x3
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7 days,
3539 pcs.
62 ֏ ×
from 40 pcs. — 60 ֏
35N06, Transistor N-MOSFET 60V 35A [TO-252]
7 days, 881 pcs.
Brand: UMW
Structure: N-Channel
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 35
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 23 mOhm/19A, 10V
Maximum power dissipation Psi max..W: 36.2
Housing: dpak
quick view
7 days,
881 pcs.
119 ֏ ×
from 50 pcs. — 109 ֏
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