1N60G, N-MOSFET Transistor 600V 1A 8W 8.5Ohm [SOT-223.]
Images are for reference only,
see technical documentation
see technical documentation
SKU
9001106016
Structure
N-channel
Slope of characteristic, S
0.5
Housing
SOT-223
Weight, g
0.39
All parameters
Datasheet UMW 1N60
pdf, 1531 КБ
3773 pcs. from the central warehouse, term 7 days
55 ֏
from 50 pcs. —
50 ֏
1 pcs.
amount of 55 ֏
Description
Reviews
600V 1A 11¦¸@10V, 500mA 4V@250¦ÌA N Channel SOT-223 MOSFETs ROHS
Technical parameters
| Structure | N-channel | |
| Maximum drain-source voltage Usi, V | 600 | |
| Maximum drain-source current at 25 C Isi max..A | 1 | |
| Maximum gate-source voltage Uzi max., V | ±30 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 8.5 ohm/0.5A, 10V | |
| Slope of characteristic, S | 0.5 | |
| Housing | SOT-223 | |
| Weight, g | 0.39 |
Technical documentation
Datasheet UMW 1N60
pdf, 1531 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 24 February1 | free |
| HayPost | 28 February1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg



