1N60G, N-MOSFET Transistor 600V 1A 8W 8.5Ohm [SOT-223.]

1N60G, N-MOSFET Transistor 600V 1A 8W 8.5Ohm [SOT-223.]
Images are for reference only,
see technical documentation
SKU
9001106016
Structure
N-channel
Slope of characteristic, S
0.5
Housing
SOT-223
Weight, g
0.39
All parameters
Datasheet UMW 1N60
pdf, 1531 КБ
3773 pcs. from the central warehouse, term 7 days
55 ֏
from 50 pcs.50 ֏
1 pcs. amount of 55 ֏
600V 1A 11¦¸@10V, 500mA 4V@250¦ÌA N Channel SOT-223 MOSFETs ROHS
Structure N-channel
Maximum drain-source voltage Usi, V 600
Maximum drain-source current at 25 C Isi max..A 1
Maximum gate-source voltage Uzi max., V ±30
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 8.5 ohm/0.5A, 10V
Slope of characteristic, S 0.5
Housing SOT-223
Weight, g 0.39
Datasheet UMW 1N60
pdf, 1531 КБ

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