1N65L, 650V 1A N-MOSFET Transistor [TO-252.]

Images are for reference only,
see technical documentation

SKU

9001106019

Brand

Structure

N-channel

Slope of characteristic, S

0.5

Housing

dpak

Weight, g

0.4

All parameters

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1118 pcs. from the central warehouse, term 7 days

69 ֏

from 50 pcs. — 60 ֏

1 pcs. amount of 69 ֏

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Description

Structure	N-channel
Maximum drain-source voltage Usi, V	650
Maximum drain-source current at 25 C Isi max..A	1
Maximum gate-source voltage Uzi max., V	±30
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	8.5 ohm/0.5A, 10V
Slope of characteristic, S	0.5
Housing	dpak
Weight, g	0.4