25N06, N-MOSFET Transistor 60V 25A [TO-252.]

25N06, N-MOSFET Transistor 60V 25A [TO-252.]
Images are for reference only,
see technical documentation
SKU
9001106021
Structure
N-channel
Housing
dpak
Weight, g
0.4
All parameters
Datasheet UMW 25N06
pdf, 774 КБ
1300 pcs. from the central warehouse, term 7 days
96 ֏
from 50 pcs.84 ֏
1 pcs. amount of 96 ֏
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Description of TO252 Integrated Circuits
Structure N-channel
Maximum drain-source voltage Usi, V 60
Maximum drain-source current at 25 C Isi max..A 25
Maximum gate-source voltage Uzi max., V ±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 23 mOhm/19A, 10V
Maximum power dissipation Psi max..W 36.2
Housing dpak
Weight, g 0.4
Datasheet UMW 25N06
pdf, 774 КБ

Delivery to Yerevan

Office CHIP AND DIP 16 February1 free
HayPost 20 February1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg