2N60G, N-MOSFET 600V 2A Transistor [SOT-223.]
Images are for reference only,
see technical documentation
see technical documentation
SKU
9001106022
Structure
N-channel
Slope of characteristic, S
1.5
Housing
SOT-223
Weight, g
0.39
All parameters
Datasheet UMW 2N60
pdf, 2632 КБ
3429 pcs. from the central warehouse, term 7 days
72 ֏
from 50 pcs. —
60 ֏
1 pcs.
amount of 72 ֏
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Description
Reviews
SOT-223 N-Channel MOSFETs ROHS VDS(V)=650V analog:UMW2N60G
Technical parameters
| Structure | N-channel | |
| Maximum drain-source voltage Usi, V | 600 | |
| Maximum drain-source current at 25 C Isi max..A | 2 | |
| Maximum gate-source voltage Uzi max., V | ±30 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 4.2 ohm/1A, 10V | |
| Slope of characteristic, S | 1.5 | |
| Housing | SOT-223 | |
| Weight, g | 0.39 |
Technical documentation
Datasheet UMW 2N60
pdf, 2632 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 24 February1 | free |
| HayPost | 28 February1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg



