2N60G, N-MOSFET 600V 2A Transistor [SOT-223.]

2N60G, N-MOSFET 600V 2A Transistor [SOT-223.]
Images are for reference only,
see technical documentation
SKU
9001106022
Structure
N-channel
Slope of characteristic, S
1.5
Housing
SOT-223
Weight, g
0.39
All parameters
Datasheet UMW 2N60
pdf, 2632 КБ
3429 pcs. from the central warehouse, term 7 days
72 ֏
from 50 pcs.60 ֏
1 pcs. amount of 72 ֏
Alternative offers1
The same product with different prices and delivery dates
SOT-223 N-Channel MOSFETs ROHS VDS(V)=650V analog:UMW2N60G
Structure N-channel
Maximum drain-source voltage Usi, V 600
Maximum drain-source current at 25 C Isi max..A 2
Maximum gate-source voltage Uzi max., V ±30
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 4.2 ohm/1A, 10V
Slope of characteristic, S 1.5
Housing SOT-223
Weight, g 0.39
Datasheet UMW 2N60
pdf, 2632 КБ

Delivery to Yerevan

Office CHIP AND DIP 24 February1 free
HayPost 28 February1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg