2N60L, N-MOSFET Transistor 600V 2A 8W [TO-252.]

2N60L, N-MOSFET Transistor 600V 2A 8W [TO-252.]
Images are for reference only,
see technical documentation
SKU
9001106023
Structure
N-channel
Slope of characteristic, S
1.5
Housing
dpak
Weight, g
0.4
All parameters
Datasheet UMW 2N60
pdf, 2632 КБ
4164 pcs. from the central warehouse, term 10 days
74 ֏
from 50 pcs.64 ֏
1 pcs. amount of 74 ֏
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TO-252 N-Channel MOSFETs ROHSVDS = 600V analog:UMW2N60L
Structure N-channel
Maximum drain-source voltage Usi, V 600
Maximum drain-source current at 25 C Isi max..A 2
Maximum gate-source voltage Uzi max., V ±30
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 4.2 ohm/1A, 10V
Slope of characteristic, S 1.5
Housing dpak
Weight, g 0.4
Datasheet UMW 2N60
pdf, 2632 КБ

Delivery to Yerevan

Office CHIP AND DIP 23 February1 free
HayPost 27 February1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg