2N60L, N-MOSFET Transistor 600V 2A 8W [TO-252.]
Images are for reference only,
see technical documentation
see technical documentation
SKU
9001106023
Structure
N-channel
Slope of characteristic, S
1.5
Housing
dpak
Weight, g
0.4
All parameters
Datasheet UMW 2N60
pdf, 2632 КБ
4164 pcs. from the central warehouse, term 10 days
74 ֏
from 50 pcs. —
64 ֏
1 pcs.
amount of 74 ֏
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Description
Reviews
TO-252 N-Channel MOSFETs ROHSVDS = 600V analog:UMW2N60L
Technical parameters
| Structure | N-channel | |
| Maximum drain-source voltage Usi, V | 600 | |
| Maximum drain-source current at 25 C Isi max..A | 2 | |
| Maximum gate-source voltage Uzi max., V | ±30 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 4.2 ohm/1A, 10V | |
| Slope of characteristic, S | 1.5 | |
| Housing | dpak | |
| Weight, g | 0.4 |
Technical documentation
Datasheet UMW 2N60
pdf, 2632 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 23 February1 | free |
| HayPost | 27 February1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg



