2SK2632LS, N-MOSFET Transistor 800V 2.5A 25W [TO-220FI(LS).] [EOL]

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see technical documentation

SKU

4650

Brand

Structure

N-Channel

Slope of characteristic, S

2.1

Housing

TO-220FI(LS)

Gate threshold voltage

4.5

Weight, g

2.5

All parameters

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17 pcs. from the central warehouse, term 6 days

1 940 ֏

1 540 ֏

from 15 pcs. — 1 510 ֏

1 pcs. amount of 1 540 ֏

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Description

Field effect transistor N-channel 800V 2.5A 25W

Structure	N-Channel
Maximum drain-source voltage Usi, V	800
Maximum drain-source current at 25 C Isi max..A	2.5
Maximum gate-source voltage Uzi max., V	±30
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	4.8 Ohm / 1.3A, 10V
Maximum power dissipation Psi max..W	25
Slope of characteristic, S	2.1
Housing	TO-220FI(LS)
Gate threshold voltage	4.5
Weight, g	2.5