2T812A, Bipolar transistor
Images are for reference only,
see technical documentation
see technical documentation
SKU
925
Brand
Russia
Structure
npn
Maximum power dissipation, W
50
Housing
kt-9 (to-3)
All parameters
kt812
pdf, 84 КБ
Special Offer
19 pcs. from the central warehouse, term 8 days
1 310 ֏
from 30 pcs. —
1 150 ֏
1 pcs.
amount of 1 310 ֏
Description
Bipolar transistor 2T812A
Technical parameters
| Structure | npn | |
| Maximum allowable current to (Ik max. A) | 10 | |
| Static current transfer ratio h21e min | 5 | |
| Cutoff frequency of current transfer ratio fgr.MHz | 3 | |
| Maximum power dissipation, W | 50 | |
| Housing | kt-9 (to-3) |
Technical documentation
kt812
pdf, 84 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 17 November1 | free |
| HayPost | 21 November1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg
