30P03D, P-MOSFET Transistor 30V 9A 37W 0.02Ohm [PDFN-8_3x3.]

30P03D, P-MOSFET Transistor 30V 9A 37W 0.02Ohm [PDFN-8_3x3.]
Images are for reference only,
see technical documentation
SKU
9001633844
Structure
P-channel
Slope of characteristic, S
30
Housing
PDFN-8_3x3
Weight, g
0.11
All parameters
30P03D
pdf, 2180 КБ
4604 pcs. from the central warehouse, term 11 days
53 ֏
from 40 pcs.49 ֏
1 pcs. amount of 53 ֏
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Technical parameters

Structure P-channel
Maximum drain-source voltage Usi, V 30
Maximum drain-source current at 25 C Isi max..A 9
Maximum gate-source voltage Uzi max., V ±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 20 mOhm/15A, 4.5V
Maximum power dissipation Psi max..W 37
Slope of characteristic, S 30
Housing PDFN-8_3x3
Weight, g 0.11

Technical documentation

30P03D
pdf, 2180 КБ

Delivery terms

Delivery to Yerevan

Office CHIP AND DIP 22 December1 free
HayPost 26 December1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg