35N06, Transistor N-MOSFET 60V 35A [TO-252]

35N06, Transistor N-MOSFET 60V 35A [TO-252]
Images are for reference only,
see technical documentation
SKU
9001106028
Structure
N-channel
Housing
dpak
Weight, g
0.4
All parameters
Datasheet UMW 35N06
pdf, 776 КБ
936 pcs. from the central warehouse, term 7 days
119 ֏
from 50 pcs.109 ֏
1 pcs. amount of 119 ֏
Alternative offers3
The same product with different prices and delivery dates
Structure N-channel
Maximum drain-source voltage Usi, V 60
Maximum drain-source current at 25 C Isi max..A 35
Maximum gate-source voltage Uzi max., V ±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 23 mOhm/19A, 10V
Maximum power dissipation Psi max..W 36.2
Housing dpak
Weight, g 0.4
Datasheet UMW 35N06
pdf, 776 КБ

Delivery to Yerevan

Office CHIP AND DIP 24 February1 free
HayPost 28 February1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg