40N06, Transistor N-MOSFET 60V 40A [TO-252]

40N06, Transistor N-MOSFET 60V 40A [TO-252]
Images are for reference only,
see technical documentation
SKU
9001106029
Structure
N-channel
Housing
dpak
Weight, g
0.4
All parameters
Datasheet 40N06
pdf, 1202 КБ
5249 pcs. from the central warehouse, term 10 days
112 ֏
from 50 pcs.103 ֏
1 pcs. amount of 112 ֏
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The same product with different prices and delivery dates
TO-252 N-Channel MOSFETs ROHS VDS = 60V, ID =40A analog:UMW40N06
Structure N-channel
Maximum drain-source voltage Usi, V 60
Maximum drain-source current at 25 C Isi max..A 50
Maximum gate-source voltage Uzi max., V ±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 14 mOhm/30A, 10V
Maximum power dissipation Psi max..W 105
Housing dpak
Weight, g 0.4
Datasheet 40N06
pdf, 1202 КБ

Delivery to Yerevan

Office CHIP AND DIP 23 February1 free
HayPost 27 February1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg