4N65F, N-MOSFET Transistor 650V 4A 33W [TO-220F]

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see technical documentation

SKU

9001106031

Brand

Structure

N-channel

Housing

TO-220F

Weight, g

1.7

All parameters

pdf, 535 КБ

1499 pcs. from the central warehouse, term 7 days

190 ֏

from 50 pcs. — 168 ֏

1 pcs. amount of 190 ֏

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Description

Structure	N-channel
Maximum drain-source voltage Usi, V	650
Maximum drain-source current at 25 C Isi max..A	4
Maximum gate-source voltage Uzi max., V	±30
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	2.3 Ohms/2A, 10V
Maximum power dissipation Psi max..W	33
Housing	TO-220F
Weight, g	1.7