AO3407A, 30V P-MOSFET Transistor 4.1A [SOT-23-3.]

AO3407A, 30V P-MOSFET Transistor 4.1A [SOT-23-3.]
Images are for reference only,
see technical documentation
SKU
9001106041
Structure
P-channel
Slope of characteristic, S
8.2
Housing
SOT-23-3
Weight, g
0.05
All parameters
AO3407A
pdf, 1743 КБ
4785 pcs. from the central warehouse, term 10 days
17 ֏
from 150 pcs.16 ֏
1 pcs. amount of 17 ֏
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Description of the SOT23 MOSFET Transistor
Structure P-channel
Maximum drain-source voltage Usi, V 30
Maximum drain-source current at 25 C Isi max..A 4.2
Maximum gate-source voltage Uzi max., V ±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 52 mOhm/4.1A, 10V
Maximum power dissipation Psi max..W 1.4
Slope of characteristic, S 8.2
Housing SOT-23-3
Weight, g 0.05
AO3407A
pdf, 1743 КБ

Delivery to Yerevan

Office CHIP AND DIP 23 February1 free
HayPost 27 February1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg