AO3407A, 30V P-MOSFET Transistor 4.1A [SOT-23-3.]
Images are for reference only,
see technical documentation
see technical documentation
SKU
9001106041
Structure
P-channel
Slope of characteristic, S
8.2
Housing
SOT-23-3
Weight, g
0.05
All parameters
AO3407A
pdf, 1743 КБ
4785 pcs. from the central warehouse, term 10 days
17 ֏
from 150 pcs. —
16 ֏
1 pcs.
amount of 17 ֏
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Description
Reviews
Description of the SOT23 MOSFET Transistor
Technical parameters
| Structure | P-channel | |
| Maximum drain-source voltage Usi, V | 30 | |
| Maximum drain-source current at 25 C Isi max..A | 4.2 | |
| Maximum gate-source voltage Uzi max., V | ±20 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 52 mOhm/4.1A, 10V | |
| Maximum power dissipation Psi max..W | 1.4 | |
| Slope of characteristic, S | 8.2 | |
| Housing | SOT-23-3 | |
| Weight, g | 0.05 |
Technical documentation
AO3407A
pdf, 1743 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 23 February1 | free |
| HayPost | 27 February1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg



