AO4447A, P-MOSFET Transistor 30V 18.5A 3.1W 0.0063Ohm [SOP-8 / SOIC-8.]

AO4447A, P-MOSFET Transistor 30V 18.5A 3.1W 0.0063Ohm [SOP-8 / SOIC-8.]
Images are for reference only,
see technical documentation
SKU
9001633796
Structure
P-channel
Slope of characteristic, S
65
Housing
SOIC-8
Weight, g
0.2
All parameters
AO4447A
pdf, 933 КБ
2813 pcs. from the central warehouse, term 7 days
113 ֏
from 25 pcs.101 ֏
1 pcs. amount of 113 ֏
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The same product with different prices and delivery dates
Structure P-channel
Maximum drain-source voltage Usi, V 30
Maximum drain-source current at 25 C Isi max..A 18.5
Maximum gate-source voltage Uzi max., V ±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 6.3 mOhm/16A, 4.5V
Maximum power dissipation Psi max..W 3.1
Slope of characteristic, S 65
Housing SOIC-8
Weight, g 0.2
AO4447A
pdf, 933 КБ

Delivery to Yerevan

Office CHIP AND DIP 16 March1 free
HayPost 20 March1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg