AO4447A, P-MOSFET Transistor 30V 18.5A 3.1W 0.0063Ohm [SOP-8 / SOIC-8.]
Images are for reference only,
see technical documentation
see technical documentation
SKU
9001633796
Structure
P-channel
Slope of characteristic, S
65
Housing
SOIC-8
Weight, g
0.2
All parameters
AO4447A
pdf, 933 КБ
2813 pcs. from the central warehouse, term 7 days
113 ֏
from 25 pcs. —
101 ֏
1 pcs.
amount of 113 ֏
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Description
Reviews
Technical parameters
| Structure | P-channel | |
| Maximum drain-source voltage Usi, V | 30 | |
| Maximum drain-source current at 25 C Isi max..A | 18.5 | |
| Maximum gate-source voltage Uzi max., V | ±20 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 6.3 mOhm/16A, 4.5V | |
| Maximum power dissipation Psi max..W | 3.1 | |
| Slope of characteristic, S | 65 | |
| Housing | SOIC-8 | |
| Weight, g | 0.2 |
Technical documentation
AO4447A
pdf, 933 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 16 March1 | free |
| HayPost | 20 March1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg



