AOD478, N-MOSFET Transistor 100V 11A 45W 0.152Ohm [TO-252 / DPAK.]

Images are for reference only,
see technical documentation

SKU

9001634717

Brand

Structure

N-Channel

Slope of characteristic, S

Housing

dpak

Features

High Cell Density Trench

Weight, g

0.45

All parameters

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All documents

2215 pcs. from the central warehouse, term 8 days

64 ֏

from 40 pcs. — 57 ֏

1 pcs. amount of 64 ֏

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Description

Description of TO252 Integrated Circuits

Structure	N-Channel
Maximum drain-source voltage Usi, V	100
Maximum drain-source current at 25 C Isi max..A	11
Maximum gate-source voltage Uzi max., V	±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	152 mOhm/3A, 4.5V
Maximum power dissipation Psi max..W	45
Slope of characteristic, S	17
Housing	dpak
Features	High Cell Density Trench
Weight, g	0.45