Home › Catalog › Electronic components › Transistors › Field effect transistors (FETs, MOSFETs) › Infineon › BSC350N20NSFDATMA1, MOSFET N-channel 200V 35A ...

BSC350N20NSFDATMA1, MOSFET N-channel 200V 35A [TDSON-8 EP]

Images are for reference only,
see technical documentation

SKU

9000555514

Brand

INFINEON TECHNOLOGIES AG.

Structure

N-Channel

Housing

PG-TDSON-8

Maximum Operating Temperature

175 C

Number of Pins

8 outputs

Стиль Корпуса Транзистора

TDSON

Рассеиваемая Мощность

150W

All parameters

Datasheet BSC350N20NSFDATMA1

pdf, 931 КБ

All documents

5 pcs. from stock Yerevan, 1 day

447 pcs. from the central warehouse, term 8 days

1 460 ֏

1 310 ֏

from 15 pcs. — 1 290 ֏

1 pcs. amount of 1 310 ֏

Alternative offers1

The same product with different prices and delivery dates

Description

Reviews

The Infineon OptiMOS™ series N-channel power MOSFET. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.

Technical parameters

Structure	N-Channel
Maximum drain-source voltage Usi, V	200
Maximum drain-source current at 25 C Isi max..A	35
Maximum gate-source voltage Uzi max., V	±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	0.035 ohm/35A, 10V
Maximum power dissipation Psi max..W	150
Housing	PG-TDSON-8
Maximum Operating Temperature	175 C
Number of Pins	8 outputs
Стиль Корпуса Транзистора	TDSON
Рассеиваемая Мощность	150W
Полярность Транзистора	N Channel
Напряжение Истока-стока Vds	200V
Непрерывный Ток Стока	35A
Сопротивление во Включенном Состоянии Rds(on)	0.031ohm
Напряжение Измерения Rds(on)	10V
Пороговое Напряжение Vgs	3B
Product line	OptiMOS Series
Weight, g	0.36