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D818E metal, Low power silicon Zener diode, 9V

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see technical documentation

SKU

4992

Brand

Saranskij Zavod Tochnyh Priborov

Power dissipation, W

0.3

Static resistance Rst., Ohm

at current I st, mA

Working temperature, C

-60…+125

Mounting method

in hole

Housing

KD-8

All parameters

126 pcs. from the central warehouse, term 6 days

1 460 ֏

1 160 ֏

from 50 pcs. — 1 030 ֏

1 pcs. amount of 1 160 ֏

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Description

Reviews

Zener diode D818E silicon, diffusion-alloy, low power, precision.
Designed to stabilize the nominal voltage of 9 V in the stabilization current range of 3...33 mA with high requirements for voltage stability in the temperature range of -60...125 o C.
Are issued in the glass case with flexible conclusions.
The type of zener diode is given on the housing.
The mass of the zener diode is not more than 1 g.

Technical parameters

Power dissipation, W	0.3
Minimum stabilization voltage, V	8.24
Nominal stabilization voltage, V	8.5
Maximum stabilization voltage, V	8.76
Static resistance Rst., Ohm	18
at current I st, mA	10
Temperature coefficient of stabilization voltage	-0.001…+0.001(%/C)
Temporary instability of stabilization voltage, %	±0.12
Minimum stabilization current Ist.min., MA	3
Maximum stabilization current Ist.max., MA	33
Working temperature, C	-60…+125
Mounting method	in hole
Housing	KD-8
Weight, g	1.5