FDD8796, N-MOSFET Transistor 25V 35A 88W 0.008Ohm [TO-252 / DPAK.]
Images are for reference only,
see technical documentation
see technical documentation
2427 pcs. from the central warehouse, term 11 days
81 ֏
from 35 pcs. —
74 ֏
1 pcs.
amount of 81 ֏
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Description
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Technical parameters
| Structure | N-channel | |
| Maximum drain-source voltage Usi, V | 25 | |
| Maximum drain-source current at 25 C Isi max..A | 35 | |
| Maximum gate-source voltage Uzi max., V | ±20 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 8 mOhm/35A, 4.5V | |
| Maximum power dissipation Psi max..W | 88 | |
| Housing | dpak | |
| Weight, g | 0.45 |
Technical documentation
FDD8796
pdf, 632 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 2 February1 | free |
| HayPost | 6 February1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg



