FDN304P, Transistor P-MOSFET 20V 2.4A [SOT-23-3]

FDN304P, Transistor P-MOSFET 20V 2.4A [SOT-23-3]
Images are for reference only,
see technical documentation
SKU
9001106058
Structure
P-channel
Slope of characteristic, S
12
Housing
SOT-23-3
Weight, g
0.05
All parameters
Datasheet UMW FDN304P
pdf, 819 КБ
5019 pcs. from the central warehouse, term 10 days
32 ֏
from 100 pcs.27 ֏
1 pcs. amount of 32 ֏
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The same product with different prices and delivery dates
Description of the SOT23 MOSFET Transistor
Structure P-channel
Maximum drain-source voltage Usi, V 20
Maximum drain-source current at 25 C Isi max..A 2.4
Maximum gate-source voltage Uzi max., V ±8
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 36 mOhm/2.4, 4.5V
Maximum power dissipation Psi max..W 1.1
Slope of characteristic, S 12
Housing SOT-23-3
Weight, g 0.05
Datasheet UMW FDN304P
pdf, 819 КБ

Delivery to Yerevan

Office CHIP AND DIP 23 February1 free
HayPost 27 February1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg