FDN337N, Transistor N-channel 30V 2.2A [SOT-23-3]
Images are for reference only,
see technical documentation
see technical documentation
SKU
9000982591
Brand
Structure
N-channel
Housing
SOT-23-3
Weight, g
0.05
All parameters
FDN337N
pdf, 140 КБ
14563 pcs. from the central warehouse, term 7 days
39 ֏
from 5 pcs. —
35 ֏
1 pcs.
amount of 39 ֏
Alternative offers1
The same product with different prices and delivery dates
Description
Reviews
Transistors and MOSFET assemblies
Technical parameters
| Structure | N-channel | |
| Maximum drain-source voltage Usi, V | 30 | |
| Maximum drain-source current at 25 C Isi max..A | 2.2 | |
| Maximum gate-source voltage Uzi max., V | ±8 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.065 Ohm / 2.2A, 4.5V | |
| Maximum power dissipation Psi max..W | 0.5 | |
| Housing | SOT-23-3 | |
| Weight, g | 0.05 |
Technical documentation
FDN337N
pdf, 140 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 16 March1 | free |
| HayPost | 20 March1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg



