FDN338P, Transistor P-MOSFET 20V 2.8A [SOT-23-3]

Images are for reference only,
see technical documentation

SKU

9001106060

Brand

Structure

P-channel

Slope of characteristic, S

6.5

Housing

SOT-23-3

Weight, g

0.05

All parameters

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1804 pcs. from the central warehouse, term 6 days

33 ֏

from 100 pcs. — 28 ֏

1 pcs. amount of 33 ֏

Description

Structure	P-channel
Maximum drain-source voltage Usi, V	20
Maximum drain-source current at 25 C Isi max..A	2.8
Maximum gate-source voltage Uzi max., V	±8
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	90 mOhm/2.8A, 4.5V
Maximum power dissipation Psi max..W	0.4
Slope of characteristic, S	6.5
Housing	SOT-23-3
Weight, g	0.05