FDN5630, Transistor N-MOSFET 60V 4A 1.66W [SOT-23-3]
![FDN5630, Transistor N-MOSFET 60V 4A 1.66W [SOT-23-3]](https://static.chipdip.ru/lib/255/DOC005255375.jpg)
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see technical documentation
see technical documentation
2142 pcs. from the central warehouse, term 5-7 working days
40 ֏
from 100 pcs. —
35 ֏
Add to Shopping Cart 1 pcs.
amount of 40 ֏
Description
Field-effect N-channel transistor 60V 4A 1.66W
Technical parameters
| Structure | n-channel | |
| Maximum drain-source voltage Usi, V | 60 | |
| Maximum drain-source current at 25 C Isi max..A | 4 | |
| Maximum gate-source voltage Uzi max., V | 20 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.047 ohm/35A/10V | |
| Maximum power dissipation Psi max..W | 1.66 | |
| Slope of characteristic, S | 5 | |
| Housing | SOT-23-3 | |
| Weight, g | 0.1 | |
Technical documentation
Datasheet FDN5630
pdf, 895 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 6 October1 | free |
| HayPost | 11 October1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg
