FDN5630, Transistor N-MOSFET 60V 4A 1.66W [SOT-23-3]

FDN5630, Transistor N-MOSFET 60V 4A 1.66W [SOT-23-3]
Images are for reference only,
see technical documentation
2142 pcs. from the central warehouse, term 5-7 working days
40 ֏
from 100 pcs.35 ֏
Add to Shopping Cart 1 pcs. amount of 40 ֏
SKU: 9001169201


Field-effect N-channel transistor 60V 4A 1.66W

Technical parameters

Structure n-channel
Maximum drain-source voltage Usi, V 60
Maximum drain-source current at 25 C Isi max..A 4
Maximum gate-source voltage Uzi max., V 20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 0.047 ohm/35A/10V
Maximum power dissipation Psi max..W 1.66
Slope of characteristic, S 5
Housing SOT-23-3
Weight, g 0.1

Technical documentation

Datasheet FDN5630
pdf, 895 КБ

Delivery terms

Delivery to Yerevan

Office CHIP AND DIP 6 October1 free
HayPost 11 October1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg