FDS8884, N-MOSFET Transistor 30V 8.5A 2.5W 0.03Ohm [SOP-8 / SOIC-8.]

Images are for reference only,
see technical documentation

SKU

9001634710

Brand

Structure

N-Channel

Housing

SOIC-8

Features

High Cell Density Trench

Weight, g

0.2

All parameters

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2949 pcs. from the central warehouse, term 11 days

45 ֏

from 60 pcs. — 41 ֏

1 pcs. amount of 45 ֏

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Description

Structure	N-Channel
Maximum drain-source voltage Usi, V	30
Maximum drain-source current at 25 C Isi max..A	8.5
Maximum gate-source voltage Uzi max., V	±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	30 mOhm/7.5A, 4.5V
Maximum power dissipation Psi max..W	2.5
Housing	SOIC-8
Features	High Cell Density Trench
Weight, g	0.2