FQP50N06, Transistor, N-channel 60V 50A [TO-220.]
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see technical documentation
see technical documentation
17 pcs. from stock Yerevan, Today
4114 pcs. from the central warehouse, term 9 days
1 400 ֏
419 ֏
from 15 pcs. —
363 ֏
1 pcs.
amount of 419 ֏
Description
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:120W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Alternate Case Style:SOT-78B; Current Id Max:50A; Device Marking:FQP50N06; On State Resistance Max:22mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:200A; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Technical parameters
Structure | N-channel | |
Maximum drain-source voltage Usi, V | 60 | |
Maximum drain-source current at 25 C Isi max..A | 50 | |
Maximum gate-source voltage Uzi max., V | ±20 | |
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.022 Ohm / 25A, 10V | |
Maximum power dissipation Psi max..W | 120 | |
Slope of characteristic, S | 40 | |
Housing | to-220 | |
Gate threshold voltage | 2.5 | |
Weight, g | 2.5 |
Technical documentation
Documentation
pdf, 762 КБ
Datasheet FQP50N06
pdf, 644 КБ
Delivery terms
Delivery to Yerevan
Office CHIP AND DIP | Today1 | free |
HayPost | 15 December1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg