GBJ2510, Diode bridge 25A 1000V [GBJ]
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see technical documentation
see technical documentation
SKU
9001624657
Number of phases
1
Maximum reverse current, uA
10
Maximum forward voltage, V
1.1
at Ipr., A
12.5
Working temperature, C
-55…+150
Mounting method
THT
All parameters
Datasheet
pdf, 244 КБ
All documents
1658 pcs. from the central warehouse, term 10 days
208 ֏
from 100 pcs. —
196 ֏
1 pcs.
amount of 208 ֏
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Diode bridge 25A 1000V
Technical parameters
| Number of phases | 1 | |
| Maximum constant reverse voltage, V | 1000 | |
| Maximum pulse reverse voltage, V | 1000 | |
| Maximum direct (rectified in half-life) current, mA | 25 | |
| Maximum allowable direct pulse current,mA | 260 | |
| Maximum reverse current, uA | 10 | |
| Maximum forward voltage, V | 1.1 | |
| at Ipr., A | 12.5 | |
| Working temperature, C | -55…+150 | |
| Mounting method | THT | |
| Housing | 6KBJ | |
| Weight, g | 7 |
Technical documentation
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 22 December1 | free |
| HayPost | 26 December1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg
