GBJ2510, Diode bridge 25A 1000V [GBJ]

Photo 1/4 GBJ2510, Diode bridge 25A 1000V [GBJ]
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see technical documentation
629 pcs. from the central warehouse, term 7 days
196 ֏
from 100 pcs.184 ֏
1 pcs. amount of 196 ֏
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Description

Diode bridge 25A 1000V

Technical parameters

Number of phases 1
Maximum constant reverse voltage, V 1000
Maximum pulse reverse voltage, V 1000
Maximum forward (rectified for half-cycle) current, A 25
Maximum permissible direct impulse current, A 260
Maximum reverse current, uA 10
Maximum forward voltage, V 1.1
at Ipr., A 12.5
Working temperature, C -55…+150
Mounting method THT
Housing 6KBJ
Weight, g 7

Technical documentation

Datasheet
pdf, 244 КБ
Datasheet
pdf, 332 КБ
Datasheet
pdf, 144 КБ

Delivery terms

Delivery to Yerevan

Office CHIP AND DIP 25 March1 free
HayPost 29 March1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg