IPD088N06N3G, N-MOSFET Transistor 60V 50A 71W 0.0088Ohm [TO-252 / DPAK.]
Images are for reference only,
see technical documentation
see technical documentation
SKU
9001634754
Structure
N-Channel
Slope of characteristic, S
57
Housing
dpak
Weight, g
0.45
All parameters
IPD088N06N3G-UMW
pdf, 476 КБ
2340 pcs. from the central warehouse, term 6 days
179 ֏
from 15 pcs. —
169 ֏
1 pcs.
amount of 179 ֏
Alternative offers2
The same product with different prices and delivery dates
View analogs1
Products with similar characteristics
Description
Reviews
Technical parameters
| Structure | N-Channel | |
| Maximum drain-source voltage Usi, V | 50 | |
| Maximum drain-source current at 25 C Isi max..A | 50 | |
| Maximum gate-source voltage Uzi max., V | ±20 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 8.8 mOhm/50A, 10V | |
| Maximum power dissipation Psi max..W | 71 | |
| Slope of characteristic, S | 57 | |
| Housing | dpak | |
| Weight, g | 0.45 |
Technical documentation
IPD088N06N3G-UMW
pdf, 476 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 28 April1 | free |
| HayPost | 2 May1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg



