IPD088N06N3G, N-MOSFET Transistor 60V 50A 71W 0.0088Ohm [TO-252 / DPAK.]

IPD088N06N3G, N-MOSFET Transistor 60V 50A 71W 0.0088Ohm [TO-252 / DPAK.]
Images are for reference only,
see technical documentation
SKU
9001634754
Structure
N-Channel
Slope of characteristic, S
57
Housing
dpak
Weight, g
0.45
All parameters
IPD088N06N3G-UMW
pdf, 476 КБ
2340 pcs. from the central warehouse, term 6 days
179 ֏
from 15 pcs.169 ֏
1 pcs. amount of 179 ֏
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Products with similar characteristics
Structure N-Channel
Maximum drain-source voltage Usi, V 50
Maximum drain-source current at 25 C Isi max..A 50
Maximum gate-source voltage Uzi max., V ±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 8.8 mOhm/50A, 10V
Maximum power dissipation Psi max..W 71
Slope of characteristic, S 57
Housing dpak
Weight, g 0.45
IPD088N06N3G-UMW
pdf, 476 КБ

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